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ATLAS Collaboration(Aaboud, M. et al), Alvarez Piqueras, D., Aparisi Pozo, J. A., Bailey, A. J., Barranco Navarro, L., Cabrera Urban, S., et al. (2019). Modelling radiation damage to pixel sensors in the ATLAS detector. J. Instrum., 14, P06012–52pp.
Abstract: Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 10(15) 1 MeV n(eq)/cm(2), while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (<= 10(15) 1 MeV n(eq)/cm(2)).
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ATLAS Collaboration(Aad, G. et al), Amos, K. R., Aparisi Pozo, J. A., Bailey, A. J., Cabrera Urban, S., Cardillo, F., et al. (2022). Operation and performance of the ATLAS semiconductor tracker in LHC Run 2. J. Instrum., 17(1), P01013–56pp.
Abstract: The semiconductor tracker (SCT) is one of the tracking systems for charged particles in the ATLAS detector. It consists of 4088 silicon strip sensor modules. During Run 2 (2015-2018) the Large Hadron Collider delivered an integrated luminosity of 156 fb(-1) to the ATLAS experiment at a centre-of-mass proton-proton collision energy of 13 TeV. The instantaneous luminosity and pile-up conditions were far in excess of those assumed in the original design of the SCT detector. Due to improvements to the data acquisition system, the SCT operated stably throughout Run 2. It was available for 99.9% of the integrated luminosity and achieved a data-quality efficiency of 99.85%. Detailed studies have been made of the leakage current in SCT modules and the evolution of the full depletion voltage, which are used to study the impact of radiation damage to the modules. '
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ATLAS Collaboration(Aad, G. et al), Bernabeu Verdú, J., Cabrera Urban, S., Castillo Gimenez, V., Costa, M. J., Fassi, F., et al. (2014). Operation and performance of the ATLAS semiconductor tracker. J. Instrum., 9, P08009–73pp.
Abstract: The semiconductor tracker is a silicon microstrip detector forming part of the inner tracking system of the ATLAS experiment at the LHC. The operation and performance of the semiconductor tracker during the first years of LHC running are described. More than 99% of the detector modules were operational during this period, with an average intrinsic hit efficiency of (99.74 +/- 0.04)%. The evolution of the noise occupancy is discussed, and measurements of the Lorentz angle, delta-ray production and energy loss presented. The alignment of the detector is found to be stable at the few-micron level over long periods of time. Radiation damage measurements, which include the evolution of detector leakage currents, are found to be consistent with predictions and are used in the verification of radiation background simulations.
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Barrio, J., Etxebeste, A., Lacasta, C., Muñoz, E., Oliver, J. F., Solaz, C., et al. (2015). Performance of VATA64HDR16 ASIC for medical physics applications based on continuous crystals and SiPMs. J. Instrum., 10, P12001–12pp.
Abstract: Detectors based on Silicon Photomultipliers (SiPMs) coupled to continuous crystals are being tested in medical physics applications due to their potential high resolution and sensitivity. To cope with the high granularity required for a very good spatial resolution, SiPM matrices with a large amount of elements are needed. To be able to read the information coming from each individual channel, dedicated ASICs are employed. The VATA64HDR16 ASIC is a 64-channel, charge-sensitive amplifier that converts the collected charge into a proportional current or voltage signal. A complete assessment of the suitability of that ASIC for medical physics applications based on continuous crystals and SiPMs has been carried out. The input charge range is linear from 20 pC up to 55 pC. The energy resolution obtained at 511 keV is 10% FWHM with a LaBr3 crystal and 16% FWHM with a LYSO crystal. A coincidence timing resolution of 24 ns FWHM is obtained with two LYSO crystals.
Keywords: Solid state detectors; Photon detectors for UV, visible and IR photons (solid-state) (PIN diodes, APDs, Si-PMTs, G-APDs, CCDs, EBCCDs, EMCCDs etc); Front-end electronics for detector readout; Gamma detectors (scintillators, CZT, HPG, HgI etc)
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Esperante-Pereira, D. (2014). DEPFET active pixel sensors for the vertex detector of the Belle-II experiment. J. Instrum., 9, C03004–11pp.
Abstract: Active pixels sensors based on the DEPFET technology will be used for the innermost vertex detector of the future Belle-II experiment. The increased luminosity of the e(+) e(-) SuperKEKB collider entails challenging detector requirements, namely: low material budget, low power consumption, high precision and efficiency, and a large readout rate. The DEPFET active pixel technology has shown to be a suitable solution for this purpose. A review of the different aspects of the detector design (sensors, readout ASICS and supplementary infrastructure) and the results of the latest thinned sensor prototypes (50 μm) are described.
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Hiti, B., Cindro, V., Gorisek, A., Franks, M., Marco-Hernandez, R., Kramberger, G., et al. (2021). Characterisation of analogue front end and time walk in CMOS active pixel sensor. J. Instrum., 16(12), P12020–12pp.
Abstract: In this work we investigated a method to determine time walk in an active silicon pixel sensor prototype using Edge-TCT with infrared laser charge injection. Samples were investigated before and after neutron irradiation to 5 . 10(14) n(eq)/cm(2). Threshold, noise and calibration of the analogue front end were determined with external charge injection. A spatially sensitive measurement of collected charge and time walk was carried out with Edge-TCT, showing a uniform charge collection and output delay in pixel centre. On pixel edges charge sharing was observed due to finite beam width resulting in smaller signals and larger output delay. Time walk below 25 ns was observed for charge above 2000 e(-) at a threshold above the noise level. Time walk measurement with external charge injection yielded identical results.
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Kuehn, S. et al, Bernabeu, J., Lacasta, C., Marco-Hernandez, R., Rodriguez Rodriguez, D., Santoyo, D., et al. (2018). Prototyping of petalets for the Phase-II upgrade of the silicon strip tracking detector of the ATLAS experiment. J. Instrum., 13, T03004–22pp.
Abstract: In the high luminosity era of the Large Hadron Collider, the instantaneous luminosity is expected to reach unprecedented values, resulting in about 200 proton-proton interactions in a typical bunch crossing. To cope with the resultant increase in occupancy, bandwidth and radiation damage, the ATLAS Inner Detector will be replaced by an all-silicon system, the Inner Tracker (ITk). The ITk consists of a silicon pixel and a strip detector and exploits the concept of modularity. Prototyping and testing of various strip detector components has been carried out. This paper presents the developments and results obtained with reduced-size structures equivalent to those foreseen to be used in the forward region of the silicon strip detector. Referred to as petalets, these structures are built around a composite sandwich with embedded cooling pipes and electrical tapes for routing the signals and power. Detector modules built using electronic flex boards and silicon strip sensors are glued on both the front and back side surfaces of the carbon structure. Details are given on the assembly, testing and evaluation of several petalets. Measurement results of both mechanical and electrical quantities are shown. Moreover, an outlook is given for improved prototyping plans for large structures.
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Kuehn, S. et al, Bernabeu, J., Lacasta, C., Marco-Hernandez, R., Santoyo, D., Solaz, C., et al. (2017). Prototyping of hybrids and modules for the forward silicon strip tracking detector for the ATLAS Phase-II upgrade. J. Instrum., 12, P05015–26pp.
Abstract: For the High-Luminosity upgrade of the Large Hadron Collider an increased instantaneous luminosity of up to 7.5 . 10(34) cm(-2) s(-1), leading to a total integrated luminosity of up to 3000 fb(-1), is foreseen. The current silicon and transition radiation tracking detectors of the ATLAS experiment will be unable to cope with the increased track densities and radiation levels, and will need to be replaced. The new tracking detector will consist entirely of silicon pixel and strip detectors. In this paper, results on the development and tests of prototype components for the new silicon strip detector in the forward regions (end-caps) of the ATLAS detector are presented. Flex-printed readout boards with fast readout chips, referred to as hybrids, and silicon detector modules are investigated. The modules consist of a hybrid glued onto a silicon strip sensor. The channels on both are connected via wire-bonds for readout and powering. Measurements of important performance parameters and a comparison of two possible readout schemes are presented. In addition, the assembly procedure is described and recommendations for further prototyping are derived.
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Loya Villalpando, A. A., Martin-Albo, J., Chen, W. T., Guenette, R., Lego, C., Park, J. S., et al. (2020). Improving the light collection efficiency of silicon photomultipliers through the use of metalenses. J. Instrum., 15(11), P11021–13pp.
Abstract: Metalenses are optical devices that implement nanostructures as phase shifters to focus incident light. Their compactness and simple fabrication make them a potential cost-effective solution for increasing light collection efficiency in particle detectors with limited photosensitive area coverage. Here we report on the characterization and performance of metalenses in increasing the light collection efficiency of silicon photomultipliers (SiPM) of various sizes using an LED of 630 nm, and find a six to seven-fold increase in signal for a 1.3 x 1 3 mm(2) SiPM when coupled with a 10-mm-diameter metalens manufactured using deep ultraviolet stepper lithography. Such improvements could be valuable for future generations of particle detectors, particularly those employed in rare-event searches such as dark matter and neutrinoless double beta decay.
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Mandic, I., Cindro, V., Debevc, J., Gorisek, A., Hiti, B., Kramberger, G., et al. (2022). Study of neutron irradiation effects in Depleted CMOS detector structures. J. Instrum., 17(3), P03030–13pp.
Abstract: In this paper the results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivities ranging from 0.5 to 3 k Omega cm are presented. Samples were irradiated with reactor neutrons up to a fluence of 2.10(15) n(eq)/cm(2). The depletion depth was measured with Edge-TCT. The effective space charge concentration N-eff was estimated from the dependence of the depletion depth on bias voltage and studied as a function of neutron fluence. The dependence of N-eff on fluence changes with initial acceptor concentration in agreement with other measurements with p-type silicon. A long term accelerated annealing study of N-eff and detector current up to 1280 minutes at 60 degrees C was made. It was found that N-eff and current in reverse biased detector behave as expected for irradiated silicon.
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