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Author  |
Mandic, I.; Cindro, V.; Debevc, J.; Gorisek, A.; Hiti, B.; Kramberger, G.; Skomina, P.; Zavrtanik, M.; Mikuz, M.; Vilella, E.; Zhang, C.; Powell, S.; Franks, M.; Marco-Hernandez, R.; Steininger, H. |
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Title |
Study of neutron irradiation effects in Depleted CMOS detector structures |
Type |
Journal Article |
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Year |
2022 |
Publication |
Journal of Instrumentation |
Abbreviated Journal |
J. Instrum. |
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Volume |
17 |
Issue |
3 |
Pages |
P03030 - 13pp |
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Keywords |
Particle tracking detectors (Solid-state detectors); Si microstrip and pad detectors; Solid state detectors |
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Abstract |
In this paper the results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivities ranging from 0.5 to 3 k Omega cm are presented. Samples were irradiated with reactor neutrons up to a fluence of 2.10(15) n(eq)/cm(2). The depletion depth was measured with Edge-TCT. The effective space charge concentration N-eff was estimated from the dependence of the depletion depth on bias voltage and studied as a function of neutron fluence. The dependence of N-eff on fluence changes with initial acceptor concentration in agreement with other measurements with p-type silicon. A long term accelerated annealing study of N-eff and detector current up to 1280 minutes at 60 degrees C was made. It was found that N-eff and current in reverse biased detector behave as expected for irradiated silicon. |
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Address |
[Mandic, I; Cindro, V; Debevc, J.; Gorisek, A.; Hiti, B.; Kramberger, G.; Skomina, P.; Zavrtanik, M.; Mikuz, M.] Jozef Stefan Inst, Jamova 39, Ljubljana, Slovenia, Email: igor.mandic@ijs.si |
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Publisher |
IOP Publishing Ltd |
Place of Publication |
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Language |
English |
Summary Language |
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Original Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1748-0221 |
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Conference |
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Notes |
WOS:000784713600004 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
5208 |
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