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Author  |
ATLAS Collaboration (Aad, G. et al); Aikot, A.; Amos, K.R.; Bouchhar, N.; Cabrera Urban, S.; Cantero, J.; Castillo Gimenez, V.; Chitishvili, M.; Costa, M.J.; Curcio, F.; Didenko, M.; Escobar, C.; Fiorini, L.; Fuster, J.; Garcia, C.; Garcia Navarro, J.E.; Gomez Delegido, A.J.; Gonzalez de la Hoz, S.; Guerrero Rojas, J.G.R.; Lacasta, C.; Marti-Garcia, S.; Martinez Agullo, P.; Melini, D.; Miralles Lopez, M.; Mitsou, V.A.; Monsonis Romero, L.; Moreno Llacer, M.; Munoz Perez, D.; Navarro-Gonzalez, J.; Poveda, J.; Rubio Jimenez, A.; Ruiz-Martinez, A.; Sabatini, P.; Saibel, A.; Salt, J.; Sanchez Sebastian, V.; Sayago Galvan, I.; Senthilkumar, V.; Soldevila, U.; Sanchez, J.; Torro Pastor, E.; Valero, A.; Valiente Moreno, E.; Valls Ferrer, J.A.; Varriale, L.; Villaplana Perez, M.; Vos, M.; Zakareishvili, T. |
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Title |
Sensor response and radiation damage effects for 3D pixels in the ATLAS IBL Detector |
Type |
Journal Article |
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Year |
2024 |
Publication |
Journal of Instrumentation |
Abbreviated Journal |
J. Instrum. |
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Volume |
19 |
Issue |
10 |
Pages |
P10008 - 40pp |
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Keywords |
Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc); Particle tracking detectors (Solid-state detectors) |
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Abstract |
Pixel sensors in 3D technology equip the outer ends of the staves of the Insertable B Layer (IBL), the innermost layer of the ATLAS Pixel Detector, which was installed before the start of LHC Run 2 in 2015. 3D pixel sensors are expected to exhibit more tolerance to radiation damage and are the technology of choice for the innermost layer in the ATLAS tracker upgrade for the HL-LHC programme. While the LHC has delivered an integrated luminosity of similar or equal to 235 fb(-1) since the start of Run 2, the 3D sensors have received a non-ionising energy deposition corresponding to a fluence of similar or equal to 8.5 x 10(14) 1MeV neutron-equivalent cm(-2) averaged over the sensor area. This paper presents results of measurements of the 3D pixel sensors' response during Run 2 and the first two years of Run 3, with predictions of its evolution until the end of Run 3 in 2025. Data are compared with radiation damage simulations, based on detailed maps of the electric field in the Si substrate, at various fluence levels and bias voltage values. These results illustrate the potential of 3D technology for pixel applications in high-radiation environments. |
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Address |
[Filmer, E. K.; Grant, C. M.; Green, M. J.; Jackson, P.; Kong, A. X. Y.; Pandya, H. D.; Ruggeri, T. A.; Saha, S.; Ting, E. X. L.; White, M. J.] Univ Adelaide, Dept Phys, Adelaide, SA, Australia |
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Publisher |
IOP Publishing Ltd |
Place of Publication |
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Language |
English |
Summary Language |
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Original Title |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1748-0221 |
ISBN |
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Medium |
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Area |
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Expedition |
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Conference |
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Notes |
WOS:001381484600001 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
6410 |
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