toggle visibility Search & Display Options

Select All    Deselect All
 |   | 
Details
   print
  Record Links
Author (up) Gonzalez-Iglesias, D.; Esperante, D.; Gimeno, B.; Boronat, M.; Blanch, C.; Fuster-Martinez, N.; Martinez-Reviriego, P.; Martin-Luna, P.; Fuster, J. doi  openurl
  Title Analytical RF Pulse Heating Analysis for High Gradient Accelerating Structures Type Journal Article
  Year 2021 Publication IEEE Transactions on Nuclear Science Abbreviated Journal IEEE Trans. Nucl. Sci.  
  Volume 68 Issue 2 Pages 78-91  
  Keywords RF accelerating structures; RF pulse heating; thermal analysis  
  Abstract The main aim of this work is to present a simple method, based on analytical expressions, for obtaining the temperature increase due to the Joule effect inside the metallic walls of an RF accelerating component. This technique relies on solving the 1-D heat-transfer equation for a thick wall, considering that the heat sources inside the wall are the ohmic losses produced by the RF electromagnetic fields penetrating the metal with finite electrical conductivity. Furthermore, it is discussed how the theoretical expressions of this method can be applied to obtain an approximation to the temperature increase in realistic 3-D RF accelerating structures, taking as an example the cavity of an RF electron photoinjector and a traveling wave linac cavity. These theoretical results have been benchmarked with numerical simulations carried out with commercial finite-element method (FEM) software, finding good agreement among them. Besides, the advantage of the analytical method with respect to the numerical simulations is evidenced. In particular, the model could be very useful during the design and optimization phase of RF accelerating structures, where many different combinations of parameters must be analyzed in order to obtain the proper working point of the device, allowing to save time and speed up the process. However, it must be mentioned that the method described in this article is intended to provide a quick approximation to the temperature increase in the device, which of course is not as accurate as the proper 3-D numerical simulations of the component.  
  Address [Gonzalez-Iglesias, D.; Esperante, D.; Gimeno, B.; Boronat, M.; Blanch, C.; Fuster-Martinez, N.; Martinez-Reviriego, P.; Martin-Luna, P.; Fuster, J.] UV, CSIC, Inst Fis Corpuscular IFIC, Valencia 46980, Spain, Email: daniel.gonzalez-iglesias@uv.es  
  Corporate Author Thesis  
  Publisher Ieee-Inst Electrical Electronics Engineers Inc Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0018-9499 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000619349900001 Approved no  
  Is ISI yes International Collaboration no  
  Call Number IFIC @ pastor @ Serial 4720  
Permanent link to this record
Select All    Deselect All
 |   | 
Details
   print

Save Citations:
Export Records:
ific federMinisterio de Ciencia e InnovaciĆ³nAgencia Estatal de Investigaciongva