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Author |
ATLAS Collaboration (Aad, G. et al); Amos, K.R.; Aparisi Pozo, J.A.; Bailey, A.J.; Cabrera Urban, S.; Cardillo, F.; Castillo Gimenez, V.; Costa, M.J.; Didenko,, M.; Escobar, C.; Estrada Pastor, O.; Fiorini, L.; Fullana Torregrosa, E.; Fuster, J.; Garcia, C.; Garcia Navarro, J.E.; Gonzalez de la Hoz, S.; Gonzalvo Rodriguez, G.R.; Guerrero Rojas, J.G.R.; Higon-Rodriguez, E.; Lacasta, C.; Lozano Bahilo, J.J.; Mamuzic, J.; Marti-Garcia, S.; Martinez Agullo, P.; Miralles Lopez, M.; Mitsou, V.A.; Monsonis Romero, L.; Moreno Llacer, M.; Navarro-Gonzalez, J.; Poveda, J.; Prades Ibañez, A.; Ruiz-Martinez, A.; Sabatini, P.; Salt, J.; Sanchez Sebastian, V.; Sayago Galvan, I.; Soldevila, U.; Sanchez, J.; Torro Pastor, E.; Valero, A.; Valls Ferrer, J.A.; Villaplana Perez, M.; Vos, M. |
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Title |
Operation and performance of the ATLAS semiconductor tracker in LHC Run 2 |
Type |
Journal Article |
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Year |
2022 |
Publication |
Journal of Instrumentation |
Abbreviated Journal |
J. Instrum. |
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Volume  |
17 |
Issue |
1 |
Pages |
P01013 - 56pp |
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Keywords |
Charge transport and multiplication in solid media; Particle tracking detectors (Solid-state detectors); Radiation damage to detector materials (solid state); Solid state detectors |
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Abstract |
The semiconductor tracker (SCT) is one of the tracking systems for charged particles in the ATLAS detector. It consists of 4088 silicon strip sensor modules. During Run 2 (2015-2018) the Large Hadron Collider delivered an integrated luminosity of 156 fb(-1) to the ATLAS experiment at a centre-of-mass proton-proton collision energy of 13 TeV. The instantaneous luminosity and pile-up conditions were far in excess of those assumed in the original design of the SCT detector. Due to improvements to the data acquisition system, the SCT operated stably throughout Run 2. It was available for 99.9% of the integrated luminosity and achieved a data-quality efficiency of 99.85%. Detailed studies have been made of the leakage current in SCT modules and the evolution of the full depletion voltage, which are used to study the impact of radiation damage to the modules. ' |
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Address |
[Jackson, P.; Kong, A. X. Y.; Potti, H.; Ruggeri, T. A.; Sharma, A. S.; White, M. J.] Univ Adelaide, Dept Phys, Adelaide, SA, Australia |
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IOP Publishing Ltd |
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English |
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ISSN |
1748-0221 |
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Conference |
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Notes |
WOS:000766149300002 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
5174 |
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Author |
Mandic, I.; Cindro, V.; Debevc, J.; Gorisek, A.; Hiti, B.; Kramberger, G.; Skomina, P.; Zavrtanik, M.; Mikuz, M.; Vilella, E.; Zhang, C.; Powell, S.; Franks, M.; Marco-Hernandez, R.; Steininger, H. |
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Title |
Study of neutron irradiation effects in Depleted CMOS detector structures |
Type |
Journal Article |
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Year |
2022 |
Publication |
Journal of Instrumentation |
Abbreviated Journal |
J. Instrum. |
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Volume |
17 |
Issue |
3 |
Pages |
P03030 - 13pp |
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Keywords |
Particle tracking detectors (Solid-state detectors); Si microstrip and pad detectors; Solid state detectors |
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Abstract |
In this paper the results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivities ranging from 0.5 to 3 k Omega cm are presented. Samples were irradiated with reactor neutrons up to a fluence of 2.10(15) n(eq)/cm(2). The depletion depth was measured with Edge-TCT. The effective space charge concentration N-eff was estimated from the dependence of the depletion depth on bias voltage and studied as a function of neutron fluence. The dependence of N-eff on fluence changes with initial acceptor concentration in agreement with other measurements with p-type silicon. A long term accelerated annealing study of N-eff and detector current up to 1280 minutes at 60 degrees C was made. It was found that N-eff and current in reverse biased detector behave as expected for irradiated silicon. |
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Address |
[Mandic, I; Cindro, V; Debevc, J.; Gorisek, A.; Hiti, B.; Kramberger, G.; Skomina, P.; Zavrtanik, M.; Mikuz, M.] Jozef Stefan Inst, Jamova 39, Ljubljana, Slovenia, Email: igor.mandic@ijs.si |
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IOP Publishing Ltd |
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English |
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ISSN |
1748-0221 |
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Notes |
WOS:000784713600004 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
5208 |
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Author |
Hiti, B.; Cindro, V.; Gorisek, A.; Franks, M.; Marco-Hernandez, R.; Kramberger, G.; Mandic, I.; Mikuz, M.; Powell, S.; Steininger, H.; Vilella, E.; Zavrtanik, M.; Zhang, C. |
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Title |
Characterisation of analogue front end and time walk in CMOS active pixel sensor |
Type |
Journal Article |
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Year |
2021 |
Publication |
Journal of Instrumentation |
Abbreviated Journal |
J. Instrum. |
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Volume |
16 |
Issue |
12 |
Pages |
P12020 - 12pp |
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Keywords |
Charge induction; Radiation-hard detectors; Solid state detectors |
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Abstract |
In this work we investigated a method to determine time walk in an active silicon pixel sensor prototype using Edge-TCT with infrared laser charge injection. Samples were investigated before and after neutron irradiation to 5 . 10(14) n(eq)/cm(2). Threshold, noise and calibration of the analogue front end were determined with external charge injection. A spatially sensitive measurement of collected charge and time walk was carried out with Edge-TCT, showing a uniform charge collection and output delay in pixel centre. On pixel edges charge sharing was observed due to finite beam width resulting in smaller signals and larger output delay. Time walk below 25 ns was observed for charge above 2000 e(-) at a threshold above the noise level. Time walk measurement with external charge injection yielded identical results. |
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Address |
[Hiti, B.; Cindro, V.; Gorisek, A.; Kramberger, G.; Mandic, I.; Mikuz, M.; Zavrtanik, M.] Jozef Stefan Inst, Jamova Cesta 39, Ljubljana, Slovenia, Email: bojan.hiti@ijs.si |
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IOP Publishing Ltd |
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English |
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ISSN |
1748-0221 |
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Notes |
WOS:000758055400055 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
5138 |
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Author |
Loya Villalpando, A.A.; Martin-Albo, J.; Chen, W.T.; Guenette, R.; Lego, C.; Park, J.S.; Capasso, F. |
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Title |
Improving the light collection efficiency of silicon photomultipliers through the use of metalenses |
Type |
Journal Article |
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Year |
2020 |
Publication |
Journal of Instrumentation |
Abbreviated Journal |
J. Instrum. |
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Volume |
15 |
Issue |
11 |
Pages |
P11021 - 13pp |
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Keywords |
Optical detector readout concepts; Solid state detectors; Dark Matter detectors (WIMPS, axions, etc); Double-beta decay detectors |
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Abstract |
Metalenses are optical devices that implement nanostructures as phase shifters to focus incident light. Their compactness and simple fabrication make them a potential cost-effective solution for increasing light collection efficiency in particle detectors with limited photosensitive area coverage. Here we report on the characterization and performance of metalenses in increasing the light collection efficiency of silicon photomultipliers (SiPM) of various sizes using an LED of 630 nm, and find a six to seven-fold increase in signal for a 1.3 x 1 3 mm(2) SiPM when coupled with a 10-mm-diameter metalens manufactured using deep ultraviolet stepper lithography. Such improvements could be valuable for future generations of particle detectors, particularly those employed in rare-event searches such as dark matter and neutrinoless double beta decay. |
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Address |
[Villalpando, A. A. Loya; Martin-Albo, J.; Guenette, R.; Lego, C.] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA, Email: aloyavil@caltech.edu |
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Publisher |
Iop Publishing Ltd |
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English |
Summary Language |
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Abbreviated Series Title |
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Series Volume |
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ISSN |
1748-0221 |
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Conference |
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Notes |
WOS:000595650800009 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
4634 |
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Author |
ATLAS Collaboration (Aaboud, M. et al); Alvarez Piqueras, D.; Aparisi Pozo, J.A.; Bailey, A.J.; Barranco Navarro, L.; Cabrera Urban, S.; Castillo, F.L.; Castillo Gimenez, V.; Cerda Alberich, L.; Costa, M.J.; Escobar, C.; Estrada Pastor, O.; Ferrer, A.; Fiorini, L.; Fullana Torregrosa, E.; Fuster, J.; Garcia, C.; Garcia Navarro, J.E.; Gonzalez de la Hoz, S.; Gonzalvo Rodriguez, G.R.; Higon-Rodriguez, E.; Jimenez Pena, J.; Lacasta, C.; Lozano Bahilo, J.J.; Madaffari, D.; Mamuzic, J.; Marti-Garcia, S.; Melini, D.; Miñano, M.; Mitsou, V.A.; Rodriguez Bosca, S.; Rodriguez Rodriguez, D.; Ruiz-Martinez, A.; Salt, J.; Santra, A.; Soldevila, U.; Sanchez, J.; Valero, A.; Valls Ferrer, J.A.; Vos, M. |
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Title |
Modelling radiation damage to pixel sensors in the ATLAS detector |
Type |
Journal Article |
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Year |
2019 |
Publication |
Journal of Instrumentation |
Abbreviated Journal |
J. Instrum. |
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Volume |
14 |
Issue |
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Pages |
P06012 - 52pp |
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Keywords |
Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc); Radiation-hard detectors; Solid state detectors |
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Abstract |
Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 10(15) 1 MeV n(eq)/cm(2), while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (<= 10(15) 1 MeV n(eq)/cm(2)). |
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Address |
[Duvnjak, D.; Jackson, P.; Oliver, J. L.; Petridis, A.; Qureshi, A.; Sharma, A. S.; White, M. J.] Univ Adelaide, Dept Phys, Adelaide, SA, Australia |
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Corporate Author |
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Thesis |
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Publisher |
Iop Publishing Ltd |
Place of Publication |
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Editor |
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Language |
English |
Summary Language |
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Original Title |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1748-0221 |
ISBN |
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Conference |
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Notes |
WOS:000472134700001 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
4063 |
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| Permanent link to this record |
