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NEXT Collaboration(McDonald, A. D. et al), Alvarez, V., Benlloch-Rodriguez, J. M., Carcel, S., Carrion, J. V., Diaz, J., et al. (2019). Electron drift and longitudinal diffusion in high pressure xenon-helium gas mixtures. J. Instrum., 14, P08009–19pp.
Abstract: We report new measurements of the drift velocity and longitudinal diffusion coefficients of electrons in pure xenon gas and in xenon-helium gas mixtures at 1-9 bar and electric field strengths of 50-300 V/cm. In pure xenon we find excellent agreement with world data at all E/P, for both drift velocity and diffusion coefficients. However, a larger value of the longitudinal diffusion coefficient than theoretical predictions is found at low E/P in pure xenon, below the range of reduced fields usually probed by TPC experiments. A similar effect is observed in xenon-helium gas mixtures at somewhat larger E/P. Drift velocities in xenon-helium mixtures are found to be theoretically well predicted. Although longitudinal diffusion in xenon-helium mixtures is found to be larger than anticipated, extrapolation based on the measured longitudinal diffusion coefficients suggest that the use of helium additives to reduce transverse diffusion in xenon gas remains a promising prospect.
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Poley, L., Blue, A., Bloch, I., Buttar, C., Fadeyev, V., Fernandez-Tejero, J., et al. (2019). Mapping the depleted area of silicon diodes using a micro-focused X-ray beam. J. Instrum., 14, P03024–14pp.
Abstract: For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker (ITk). The ITk will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of 500V to maintain a low noise and power dissipation. In order to minimise sensor leakage currents, particularly in the high-radiation environment inside the ATLAS detector, sensors are foreseen to be operated at low temperatures and to be manufactured from wafers with a high bulk resistivity of several k Omega.cm. Simulations showed the electric field inside sensors with high bulk resistivity to extend towards the sensor edge, which could lead to increased surface currents for narrow dicing edges. In order to map the electric field inside biased silicon sensors with high bulk resistivity, three diodes from ATLAS silicon strip sensor prototype wafers were studied with a monochromatic, micro-focused X-ray beam at the Diamond Light Source (Didcot, U.K.). For all devices under investigation, the electric field inside the diode was mapped and its dependence on the applied bias voltage was studied.
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ATLAS Collaboration(Aad, G. et al), Cabrera Urban, S., Castillo Gimenez, V., Costa, M. J., Ferrer, A., Fiorini, L., et al. (2014). A neural network clustering algorithm for the ATLAS silicon pixel detector. J. Instrum., 9, P09009–34pp.
Abstract: A novel technique to identify and split clusters created by multiple charged particles in the ATLAS pixel detector using a set of artificial neural networks is presented. Such merged clusters are a common feature of tracks originating from highly energetic objects, such as jets. Neural networks are trained using Monte Carlo samples produced with a detailed detector simulation. This technique replaces the former clustering approach based on a connected component analysis and charge interpolation. The performance of the neural network splitting technique is quantified using data from proton-proton collisions at the LHC collected by the ATLAS detector in 2011 and from Monte Carlo simulations. This technique reduces the number of clusters shared between tracks in highly energetic jets by up to a factor of three. It also provides more precise position and error estimates of the clusters in both the transverse and longitudinal impact parameter resolution.
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ATLAS Collaboration(Aad, G. et al), Bernabeu Verdu, J., Cabrera Urban, S., Castillo Gimenez, V., Costa, M. J., Fassi, F., et al. (2014). Operation and performance of the ATLAS semiconductor tracker. J. Instrum., 9, P08009–73pp.
Abstract: The semiconductor tracker is a silicon microstrip detector forming part of the inner tracking system of the ATLAS experiment at the LHC. The operation and performance of the semiconductor tracker during the first years of LHC running are described. More than 99% of the detector modules were operational during this period, with an average intrinsic hit efficiency of (99.74 +/- 0.04)%. The evolution of the noise occupancy is discussed, and measurements of the Lorentz angle, delta-ray production and energy loss presented. The alignment of the detector is found to be stable at the few-micron level over long periods of time. Radiation damage measurements, which include the evolution of detector leakage currents, are found to be consistent with predictions and are used in the verification of radiation background simulations.
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AGATA Collaboration(Crespi, F. C. L. et al), & Gadea, A. (2013). Response of AGATA segmented HPGe detectors to gamma rays up to 15.1 MeV. Nucl. Instrum. Methods Phys. Res. A, 705, 47–54.
Abstract: The response of AGATA segmented HPGe detectors to gamma rays in the energy range 2-15 MeV was measured. The 15.1 MeV gamma rays were produced using the reaction d(B-11,n gamma)C-12 at E-beam=19.1 MeV, while gamma rays between 2 and 9 MeV were produced using an Am-Be-Fe radioactive source. The energy resolution and linearity were studied and the energy-to-pulse-height conversion resulted to be linear within 0.05%.Experimental interaction multiplicity distributions are discussed and compared with the results of Geant4 simulations. It is shown that the application of gamma-ray tracking allows a suppression of background radiation caused by n-capture in Ge nuclei. Finally the Doppler correction for the 15.1 MeV gamma line, performed using the position information extracted with Pulse-shape analysis is discussed.
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