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Author Mandic, I.; Cindro, V.; Debevc, J.; Gorisek, A.; Hiti, B.; Kramberger, G.; Skomina, P.; Zavrtanik, M.; Mikuz, M.; Vilella, E.; Zhang, C.; Powell, S.; Franks, M.; Marco-Hernandez, R.; Steininger, H. url  doi
openurl 
  Title Study of neutron irradiation effects in Depleted CMOS detector structures Type Journal Article
  Year 2022 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.  
  Volume 17 Issue 3 Pages P03030 - 13pp  
  Keywords Particle tracking detectors (Solid-state detectors); Si microstrip and pad detectors; Solid state detectors  
  Abstract In this paper the results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivities ranging from 0.5 to 3 k Omega cm are presented. Samples were irradiated with reactor neutrons up to a fluence of 2.10(15) n(eq)/cm(2). The depletion depth was measured with Edge-TCT. The effective space charge concentration N-eff was estimated from the dependence of the depletion depth on bias voltage and studied as a function of neutron fluence. The dependence of N-eff on fluence changes with initial acceptor concentration in agreement with other measurements with p-type silicon. A long term accelerated annealing study of N-eff and detector current up to 1280 minutes at 60 degrees C was made. It was found that N-eff and current in reverse biased detector behave as expected for irradiated silicon.  
  Address [Mandic, I; Cindro, V; Debevc, J.; Gorisek, A.; Hiti, B.; Kramberger, G.; Skomina, P.; Zavrtanik, M.; Mikuz, M.] Jozef Stefan Inst, Jamova 39, Ljubljana, Slovenia, Email: igor.mandic@ijs.si  
  Corporate Author Thesis  
  Publisher IOP Publishing Ltd Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1748-0221 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000784713600004 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 5208  
Permanent link to this record
 

 
Author Hiti, B.; Cindro, V.; Gorisek, A.; Franks, M.; Marco-Hernandez, R.; Kramberger, G.; Mandic, I.; Mikuz, M.; Powell, S.; Steininger, H.; Vilella, E.; Zavrtanik, M.; Zhang, C. url  doi
openurl 
  Title Characterisation of analogue front end and time walk in CMOS active pixel sensor Type Journal Article
  Year 2021 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.  
  Volume 16 Issue 12 Pages P12020 - 12pp  
  Keywords Charge induction; Radiation-hard detectors; Solid state detectors  
  Abstract In this work we investigated a method to determine time walk in an active silicon pixel sensor prototype using Edge-TCT with infrared laser charge injection. Samples were investigated before and after neutron irradiation to 5 . 10(14) n(eq)/cm(2). Threshold, noise and calibration of the analogue front end were determined with external charge injection. A spatially sensitive measurement of collected charge and time walk was carried out with Edge-TCT, showing a uniform charge collection and output delay in pixel centre. On pixel edges charge sharing was observed due to finite beam width resulting in smaller signals and larger output delay. Time walk below 25 ns was observed for charge above 2000 e(-) at a threshold above the noise level. Time walk measurement with external charge injection yielded identical results.  
  Address [Hiti, B.; Cindro, V.; Gorisek, A.; Kramberger, G.; Mandic, I.; Mikuz, M.; Zavrtanik, M.] Jozef Stefan Inst, Jamova Cesta 39, Ljubljana, Slovenia, Email: bojan.hiti@ijs.si  
  Corporate Author Thesis  
  Publisher IOP Publishing Ltd Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1748-0221 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000758055400055 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 5138  
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Author Studen, A.; Burdette, D.; Chesi, E.; Cindro, V.; Clinthorne, N.H.; Cochran, E.; Grosicar, B.; Kagan, H.; Lacasta, C.; Linhart, V.; Mikuz, M.; Stankova, V.; Weilhammer, P.; Zontar, D. doi  openurl
  Title Timing performance of the silicon PET insert probe Type Journal Article
  Year 2010 Publication Radiation Protection Dosimetry Abbreviated Journal Radiat. Prot. Dosim.  
  Volume 139 Issue 1-3 Pages 199-203  
  Keywords  
  Abstract Simulation indicates that PET image could be improved by upgrading a conventional ring with a probe placed close to the imaged object. In this paper, timing issues related to a PET probe using high-resistivity silicon as a detector material are addressed. The final probe will consist of several (four to eight) 1-mm thick layers of silicon detectors, segmented into 1 x 1 mm(2) pads, each pad equivalent to an independent p + nn+ diode. A proper matching of events in silicon with events of the external ring can be achieved with a good timing resolution. To estimate the timing performance, measurements were performed on a simplified model probe, consisting of a single 1-mm thick detector with 256 square pads (1.4 mm side), coupled with two VATAGP7s, application-specific integrated circuits. The detector material and electronics are the same that will be used for the final probe. The model was exposed to 511 keV annihilation photons from an Na-22 source, and a scintillator (LYSO)-PMT assembly was used as a timing reference. Results were compared with the simulation, consisting of four parts: (i) GEANT4 implemented realistic tracking of electrons excited by annihilation photon interactions in silicon, (ii) calculation of propagation of secondary ionisation (electron-hole pairs) in the sensor, (iii) estimation of the shape of the current pulse induced on surface electrodes and (iv) simulation of the first electronics stage. A very good agreement between the simulation and the measurements were found. Both indicate reliable performance of the final probe at timing windows down to 20 ns.  
  Address [Studen, A.; Cindro, V.; Grosicar, B.; Mikuz, M.; Zontar, D.] Jozef Stefan Inst, SI-1000 Ljubljana, Slovenia, Email: andrej.studen@ijs.si  
  Corporate Author Thesis  
  Publisher Oxford Univ Press Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0144-8420 ISBN Medium  
  Area Expedition Conference  
  Notes ISI:000277738200035 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ elepoucu @ Serial 449  
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Author Linhart, V.; Burdette, D.; Chessi, E.; Cindro, V.; Clinthorne, N.H.; Cochran, E.; Grosicar, B.; Honscheid, K.; Kagan, H.; Lacasta, C.; Llosa, G.; Mikuz, M.; Stankova, V.; Studen, A.; Weilhammer, P.; Zontar, D. doi  openurl
  Title Spectroscopy study of imaging devices based on silicon Pixel Array Detector coupled to VATAGP7 read-out chips Type Journal Article
  Year 2011 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.  
  Volume 6 Issue Pages C01092 - 8pp  
  Keywords Gamma camera, SPECT, PET PET/CT, coronary CT angiography (CTA); Compton imaging  
  Abstract Spectroscopic and timing response studies have been conducted on a detector module consisting of a silicon Pixel Array Detector bonded on two VATAGP7 read-out chips manufactured by Gamma-Medica Ideas using laboratory gamma sources and the internal calibration facilities (the calibration system of the read-out chips). The performed tests have proven that the chips have (i) non-linear calibration curves which can be approximated by power functions, (ii) capability to measure the energy of photons with energy resolution better than 2 keV (exact range and resolution depend on experimental setup), (iii) the internal calibration facility which provides 6 out of 16 available internal calibration charges within our region of interest (spanning the Compton edge of 511 keV photons). The peaks induced by the internal calibration facility are suitable for a fit of the calibration curves. However, they are not suitable for measurements of equivalent noise charge because their full width at half maximum varies with their amplitude. These facts indicate that the VATAGP7 chips are useful and precise tools for a wide variety of spectroscopic devices. We have also explored time walk of the module and peaking time of the spectroscopy signals provided by the chips. We have observed that (iv) the time walk is caused partly by the peaking time of the signals provided by the fast shaper of the chips and partly by the timing uncertainty related to the varying position of the photon interaction, (v) the peaking time of the spectroscopy signals provided by the chips increases with increasing pulse height.  
  Address [Linhart, V.; Lacasta, C.; Llosa, G.; Stankova, V.] UVEG, CSIC, IFIC, Expt Phys Dept,Inst Fis Corpuscular, E-46071 Valencia, Spain, Email: Vladimir.Linhart@ific.uv.es  
  Corporate Author Thesis  
  Publisher Iop Publishing Ltd Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1748-0221 ISBN Medium  
  Area Expedition Conference  
  Notes ISI:000291345600097 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ elepoucu @ Serial 645  
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Author Grkovski, M.; Brzezinski, K.; Cindro, V.; Clinthorne, N.H.; Kagan, H.; Lacasta, C.; Mikuz, M.; Solaz, C.; Studen, A.; Weilhammer, P.; Zontar, D. doi  openurl
  Title Evaluation of a high resolution silicon PET insert module Type Journal Article
  Year 2015 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 788 Issue Pages 86-94  
  Keywords Positron emission tomography; Silicon detectors; PET insert; Image reconstruction  
  Abstract Conventional PET systems can be augmented with additional detectors placed in close proximity of the region of interest. We developed a high resolution PET insert module to evaluate the added benefit of such a combination. The insert module consists of two back-to-back 1 mm thick silicon sensors, each segmented into 1040 1 mm(2) pads arranged in a 40 by 26 array. A set of 16 VATAGP7.1 ASICs and a custom assembled data acquisition board were used to read out the signal from the insert module. Data were acquired in slice (20) geometry with a Jaszczak phantom (rod diameters of 12-4.8 mm) Filled with F-18-FDG and the images were reconstructed with ML-EM method. Both data with full and limited angular coverage from the insert module were considered and three types of coincidence events were combined. The ratio of high-resolution data that substantially improves quality of the reconstructed image for the region near the surface of the insert module was estimated to be about 4%. Results from our previous studies suggest that such ratio could be achieved at a moderate technological expense by using an equivalent of two insert modules (an effective sensor thickness of 4 mm).  
  Address [Grkovski, Milan; Cindro, Vladimir; Mikuz, Marko; Studen, Andrej; Zontar, Dejan] Jozef Stefan Inst, Ljubljana, Slovenia, Email: milan.grkovski@ijs.si  
  Corporate Author Thesis  
  Publisher Elsevier Science Bv Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000354870700016 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 2232  
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