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Author |
Miñano, M. |
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Title  |
Radiation Hard Silicon Strips Detectors for the SLHC |
Type |
Journal Article |
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Year |
2011 |
Publication |
IEEE Transactions on Nuclear Science |
Abbreviated Journal |
IEEE Trans. Nucl. Sci. |
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Volume |
58 |
Issue |
3 |
Pages |
1135-1140 |
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Keywords |
High energy physics; microstrip; radiation detectors; silicon; SLHC |
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Abstract |
While the Large Hadron Collider (LHC) began taking data in 2009, scenarios for a machine upgrade to achieve a much higher luminosity are being developed. In the current planning, it is foreseen to increase the luminosity of the LHC at CERN around 2018. As radiation damage scales with integrated luminosity, the particle physics experiments will need to be equipped with a new generation of radiation hard detectors. This article reports on the status of the R&D projects on radiation hard silicon strips detectors for particle physics, linked to the Large Hadron Collider Upgrade, super-LHC (sLHC) of the ATLAS microstrip detector. The primary focus of this report is on measuring the radiation hardness of the silicon materials and the detectors under study. This involves designing silicon detectors, irradiating them to the sLHC radiation levels and studying their performance as particle detectors. The most promising silicon detector for the different radiation levels in the different regions of the ATLAS microstrip detector will be presented. Important challenges related to engineering layout, powering, cooling and reading out a very large strip detector are presented. Ideas on possible schemes for the layout and support mechanics will be shown. |
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Address |
IFIC UV CSIC, Inst Fis Corpuscular, E-46071 Valencia, Spain, Email: mercedes.minano@ific.uv.es |
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Ieee-Inst Electrical Electronics Engineers Inc |
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English |
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ISSN |
0018-9499 |
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Notes |
ISI:000291659300001 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
no |
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Call Number |
IFIC @ pastor @ |
Serial |
651 |
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Author |
Unno, Y. et al; Bernabeu, J.; Lacasta, C.; Solaz, C.; Soldevila, U. |
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Title |
Specifications and pre-production of n plus -in-p large-format strip sensors fabricated in 6-inch silicon wafers, ATLAS18, for the Inner Tracker of the ATLAS Detector for High-Luminosity Large Hadron Collider |
Type |
Journal Article |
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Year |
2023 |
Publication |
Journal of Instrumentation |
Abbreviated Journal |
J. Instrum. |
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Volume |
18 |
Issue |
3 |
Pages |
T03008 - 29pp |
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Keywords |
Particle tracking detectors (Solid-state detectors); Radiation-hard detectors; Si microstrip and pad detectors |
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Abstract |
The ATLAS experiment is constructing new all-silicon inner tracking system for HL-LHC. The strip detectors cover the radial extent of 40 to 100 cm. A new approach is adopted to use p-type silicon material, making the readout in n+-strips, so-called n+-in-p sensors. This allows for enhanced radiation tolerance against an order of magnitude higher particle fluence compared to the LHC. To cope with varying hit rates and occupancies as a function of radial distance, there are two barrel sensor types, the short strips (SS) for the inner 2 and the long strips (LS) for the outer 2 barrel cylinders, respectively. The barrel sensors exhibit a square, 9.8 x 9.8 cm2, geometry, the largest possible sensor area from a 6-inch wafer. The strips are laid out in parallel with a strip pitch of 75.5 μm and 4 or 2 rows of strip segments. The strips are AC-coupled and biased via polysilicon resistors. The endcap sensors employ a “stereo-annulus” geometry exhibiting a skewed-trapezoid shapes with circular edges. They are designed in 6 unique shapes, R0 to R5, corresponding to progressively increasing radial extents and which allows them to fit within the petal geometry and the 6-inch wafer maximally. The strips are in fan-out geometry with an in-built rotation angle, with a mean pitch of approximately 75 μm and 4 or 2 rows of strip segments. The eight sensor types are labeled as ATLAS18xx where xx stands for SS, LS, and R0 to R5. According to the mechanical and electrical specifications, CAD files for wafer processing were laid out, following the successful designs of prototype barrel and endcap sensors, together with a number of optimizations. A pre-production was carried out prior to the full production of the wafers. The quality of the sensors is reviewed and judged excellent through the test results carried out by vendor. These sensors are used for establishing acceptance procedures and to evaluate their performance in the ATLAS collaboration, and subsequently for pre-production of strip modules and stave and petal structures. |
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Address |
[Allport, P. P.; Chisholm, A.; George, W.; Gonella, L.; Kopsalis, I.; Lomas, J.] Univ Birmingham, Sch Phys & Astron, Birmingham B152TT, England, Email: yoshinobu.unno@kek.jp |
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IOP Publishing Ltd |
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English |
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Edition |
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ISSN |
1748-0221 |
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Notes |
WOS:000974242700001 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
5522 |
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Author |
Mandic, I.; Cindro, V.; Debevc, J.; Gorisek, A.; Hiti, B.; Kramberger, G.; Skomina, P.; Zavrtanik, M.; Mikuz, M.; Vilella, E.; Zhang, C.; Powell, S.; Franks, M.; Marco-Hernandez, R.; Steininger, H. |
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Title |
Study of neutron irradiation effects in Depleted CMOS detector structures |
Type |
Journal Article |
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Year |
2022 |
Publication |
Journal of Instrumentation |
Abbreviated Journal |
J. Instrum. |
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Volume |
17 |
Issue |
3 |
Pages |
P03030 - 13pp |
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Keywords |
Particle tracking detectors (Solid-state detectors); Si microstrip and pad detectors; Solid state detectors |
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Abstract |
In this paper the results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivities ranging from 0.5 to 3 k Omega cm are presented. Samples were irradiated with reactor neutrons up to a fluence of 2.10(15) n(eq)/cm(2). The depletion depth was measured with Edge-TCT. The effective space charge concentration N-eff was estimated from the dependence of the depletion depth on bias voltage and studied as a function of neutron fluence. The dependence of N-eff on fluence changes with initial acceptor concentration in agreement with other measurements with p-type silicon. A long term accelerated annealing study of N-eff and detector current up to 1280 minutes at 60 degrees C was made. It was found that N-eff and current in reverse biased detector behave as expected for irradiated silicon. |
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Address |
[Mandic, I; Cindro, V; Debevc, J.; Gorisek, A.; Hiti, B.; Kramberger, G.; Skomina, P.; Zavrtanik, M.; Mikuz, M.] Jozef Stefan Inst, Jamova 39, Ljubljana, Slovenia, Email: igor.mandic@ijs.si |
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Publisher |
IOP Publishing Ltd |
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English |
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ISSN |
1748-0221 |
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Conference |
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Notes |
WOS:000784713600004 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
5208 |
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Author |
Poley, L. et al; Bernabeu, J.; Civera, J.V.; Lacasta, C.; Leon, P.; Platero, A.; Platero, V; Solaz, C.; Soldevila, U.; Vidal, G. |
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Title |
The ABC130 barrel module prototyping programme for the ATLAS strip tracker |
Type |
Journal Article |
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Year |
2020 |
Publication |
Journal of Instrumentation |
Abbreviated Journal |
J. Instrum. |
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Volume |
15 |
Issue |
9 |
Pages |
P09004 - 78pp |
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Keywords |
Detector design and construction technologies and materials; Si microstrip and pad detectors; Radiation-hard detectors; Front-end electronics for detector readout |
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Abstract |
For the Phase-II Upgrade of the ATLAS Detector [1], its Inner Detector, consisting of silicon pixel, silicon strip and transition radiation sub-detectors, will be replaced with an all new 100% silicon tracker, composed of a pixel tracker at inner radii and a strip tracker at outer radii. The future ATLAS strip tracker will include 11,000 silicon sensor modules in the central region (barrel) and 7,000 modules in the forward region (end-caps), which are foreseen to be constructed over a period of 3.5 years. The construction of each module consists of a series of assembly and quality control steps, which were engineered to be identical for all production sites. In order to develop the tooling and procedures for assembly and testing of these modules, two series of major prototyping programs were conducted: an early program using readout chips designed using a 250 nm fabrication process (ABCN-250) [2, 3] and a subsequent program using a follow-up chip set made using 130 nm processing (ABC130 and HCC130 chips). This second generation of readout chips was used for an extensive prototyping program that produced around 100 barrel-type modules and contributed significantly to the development of the final module layout. This paper gives an overview of the components used in ABC130 barrel modules, their assembly procedure and findings resulting from their tests. |
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Address |
[Poley, L.; Anderssen, E.; Ciocio, A.; Cornell, E.; Haber, C.; Haugen, T. E.; Heim, T.; Johnson, T. A.; Krizka, K.; Labitan, C.; Li, B.; Li, C.; MacFadyen, R.; Mladina, E.; Ottino, G.; Sanethavong, P.; Santpur, S. Neha; Witharm, R.] Lawrence Berkeley Natl Lab, Cyclotron Rd, Berkeley, CA 94720 USA, Email: APoley@cern.ch |
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Corporate Author |
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Thesis |
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Publisher |
Iop Publishing Ltd |
Place of Publication |
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English |
Summary Language |
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Original Title |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1748-0221 |
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Conference |
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Notes |
WOS:000577273400004 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
4572 |
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