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Author NEXT Collaboration (Rogers, L. et al); Alvarez, V.; Benlloch-Rodriguez, J.M.; Botas, A.; Carcel, S.; Carrion, J.V.; Diaz, J.; Felkai, R.; Ferrario, P.; Gomez-Cadenas, J.J.; Kekic, M.; Laing, A.; Lopez-March, N.; Martinez, A.; Martinez-Lema, G.; Muñoz Vidal, J.; Musti, M.; Nebot-Guinot, M.; Novella, P.; Palmeiro, B.; Perez, J.; Querol, M.; Renner, J.; Rodriguez, J.; Romo-Luque, C; Simon, A.; Sorel, M.; Torrent, J.; Yahlali, N.
Title High voltage insulation and gas absorption of polymers in high pressure argon and xenon gases Type Journal Article
Year 2018 Publication (up) Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 13 Issue Pages P10002 - 19pp
Keywords Gaseous detectors; Scintillators, scintillation and light emission processes (solid, gas and liquid scintillators)
Abstract High pressure gas time projection chambers (HPGTPCs) are made with a variety of materials, many of which still await proper characterization in high pressure noble gas environments. As HPGTPCs increase in size toward ton-scale detectors, assemblies become larger and more complex, creating a need for detailed understanding of how structural supports and high voltage insulators behave. This includes identification of materials with predictable mechanical properties and without surface charge accumulation that may lead to field deformation or sparking. This paper explores the mechanical and electrical effects of high pressure gas environments on insulating polymers PTFE, HDPE, PEEK, POM and UHMW in argon and xenon, including studying gas absorption, swelling and high voltage insulation strength.
Address [Hauptman, J.] Iowa State Univ, Dept Phys & Astron, 12 Phys Hall, Ames, IA 50011 USA, Email: leslie.rogers@mavs.uta.edu
Corporate Author Thesis
Publisher Iop Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000445999500002 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 3744
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Author NEXT Collaboration (Monrabal, F. et al); Laing, A.; Alvarez, V.; Benlloch-Rodriguez, J.M.; Carcel, S.; Carrion, J.V.; Felkai, R.; Martinez, A.; Musti, M.; Querol, M.; Rodriguez, J.; Simon, A.; Torrent, J.; Botas, A.; Diaz, J.; Kekic, M.; Lopez-March, N.; Martinez-Lema, G.; Muñoz Vidal, J.; Nebot-Guinot, M.; Novella, P.; Palmeiro, B.; Perez, J.; Renner, J.; Romo-Luque, C.; Sorel, M.; Yahlali, N.
Title The NEXT White (NEW) detector Type Journal Article
Year 2018 Publication (up) Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 13 Issue Pages P12010 - 38pp
Keywords Double-beta decay detectors; Particle tracking detectors; Scintillators; scintillation and light emission processes (solid gas and liquid scintillators); Time projection chambers
Abstract Conceived to host 5 kg of xenon at a pressure of 15 bar in the fiducial volume, the NEXT-White apparatus is currently the largest high pressure xenon gas TPC using electroluminescent amplification in the world. It is also a 1:2 scale model of the NEXT-100 detector for Xe-136 beta beta 0 nu decay searches, scheduled to start operations in 2019. Both detectors measure the energy of the event using a plane of photomultipliers located behind a transparent cathode. They can also reconstruct the trajectories of charged tracks in the dense gas of the TPC with the help of a plane of silicon photomultipliers located behind the anode. A sophisticated gas system, common to both detectors, allows the high gas purity needed to guarantee a long electron lifetime. NEXT-White has been operating since October 2016 at the Laboratorio Subterraneo de Canfranc (LSC), in Spain. This paper describes the detector and associated infrastructures, as well as the main aspects of its initial operation.
Address [Ouero, M.; Hauptman, J.] Iowa State Univ, Dept Phys & Astron, 12 Phys Hall, Ames, IA 50011 USA, Email: monrabal18@gmail.com
Corporate Author Thesis
Publisher Iop Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000452463500001 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 3833
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Author Poley, L.; Blue, A.; Bloch, I.; Buttar, C.; Fadeyev, V.; Fernandez-Tejero, J.; Fleta, C.; Hacker, J.; Lacasta, C.; Miñano, M.; Renzmann, M.; Rossi, E.; Sawyer, C.; Sperlich, D.; Stegler, M.; Ullan, M.; Unno, Y.
Title Mapping the depleted area of silicon diodes using a micro-focused X-ray beam Type Journal Article
Year 2019 Publication (up) Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 14 Issue Pages P03024 - 14pp
Keywords Si microstrip and pad detectors; Detector design and construction technologies and materials; Particle tracking detectors (Solid-state detectors); Radiation-hard detectors
Abstract For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker (ITk). The ITk will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of 500V to maintain a low noise and power dissipation. In order to minimise sensor leakage currents, particularly in the high-radiation environment inside the ATLAS detector, sensors are foreseen to be operated at low temperatures and to be manufactured from wafers with a high bulk resistivity of several k Omega.cm. Simulations showed the electric field inside sensors with high bulk resistivity to extend towards the sensor edge, which could lead to increased surface currents for narrow dicing edges. In order to map the electric field inside biased silicon sensors with high bulk resistivity, three diodes from ATLAS silicon strip sensor prototype wafers were studied with a monochromatic, micro-focused X-ray beam at the Diamond Light Source (Didcot, U.K.). For all devices under investigation, the electric field inside the diode was mapped and its dependence on the applied bias voltage was studied.
Address [Poley, L.] Lawrence Berkeley Natl Lab, Cyclotron Rd, Berkeley, CA 94720 USA, Email: Anne-Luise.Poley@desy.de
Corporate Author Thesis
Publisher Iop Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000463330900012 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 3973
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Author ATLAS Collaboration (Aaboud, M. et al); Alvarez Piqueras, D.; Aparisi Pozo, J.A.; Bailey, A.J.; Barranco Navarro, L.; Cabrera Urban, S.; Castillo, F.L.; Castillo Gimenez, V.; Cerda Alberich, L.; Costa, M.J.; Escobar, C.; Estrada Pastor, O.; Ferrer, A.; Fiorini, L.; Fullana Torregrosa, E.; Fuster, J.; Garcia, C.; Garcia Navarro, J.E.; Gonzalez de la Hoz, S.; Gonzalvo Rodriguez, G.R.; Higon-Rodriguez, E.; Jimenez Pena, J.; Lacasta, C.; Lozano Bahilo, J.J.; Madaffari, D.; Mamuzic, J.; Marti-Garcia, S.; Melini, D.; Miñano, M.; Mitsou, V.A.; Rodriguez Bosca, S.; Rodriguez Rodriguez, D.; Ruiz-Martinez, A.; Salt, J.; Santra, A.; Soldevila, U.; Sanchez, J.; Valero, A.; Valls Ferrer, J.A.; Vos, M.
Title Modelling radiation damage to pixel sensors in the ATLAS detector Type Journal Article
Year 2019 Publication (up) Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 14 Issue Pages P06012 - 52pp
Keywords Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc); Radiation-hard detectors; Solid state detectors
Abstract Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 10(15) 1 MeV n(eq)/cm(2), while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (<= 10(15) 1 MeV n(eq)/cm(2)).
Address [Duvnjak, D.; Jackson, P.; Oliver, J. L.; Petridis, A.; Qureshi, A.; Sharma, A. S.; White, M. J.] Univ Adelaide, Dept Phys, Adelaide, SA, Australia
Corporate Author Thesis
Publisher Iop Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000472134700001 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 4063
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Author Loya Villalpando, A.A.; Martin-Albo, J.; Chen, W.T.; Guenette, R.; Lego, C.; Park, J.S.; Capasso, F.
Title Improving the light collection efficiency of silicon photomultipliers through the use of metalenses Type Journal Article
Year 2020 Publication (up) Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 15 Issue 11 Pages P11021 - 13pp
Keywords Optical detector readout concepts; Solid state detectors; Dark Matter detectors (WIMPS, axions, etc); Double-beta decay detectors
Abstract Metalenses are optical devices that implement nanostructures as phase shifters to focus incident light. Their compactness and simple fabrication make them a potential cost-effective solution for increasing light collection efficiency in particle detectors with limited photosensitive area coverage. Here we report on the characterization and performance of metalenses in increasing the light collection efficiency of silicon photomultipliers (SiPM) of various sizes using an LED of 630 nm, and find a six to seven-fold increase in signal for a 1.3 x 1 3 mm(2) SiPM when coupled with a 10-mm-diameter metalens manufactured using deep ultraviolet stepper lithography. Such improvements could be valuable for future generations of particle detectors, particularly those employed in rare-event searches such as dark matter and neutrinoless double beta decay.
Address [Villalpando, A. A. Loya; Martin-Albo, J.; Guenette, R.; Lego, C.] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA, Email: aloyavil@caltech.edu
Corporate Author Thesis
Publisher Iop Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000595650800009 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 4634
Permanent link to this record
 

 
Author ATLAS Collaboration (Aad, G. et al); Aparisi Pozo, J.A.; Bailey, A.J.; Cabrera Urban, S.; Cardillo, F.; Castillo, F.L.; Castillo Gimenez, V.; Costa, M.J.; Escobar, C.; Estrada Pastor, O.; Fiorini, L.; Fullana Torregrosa, E.; Fuster, J.; Garcia, C.; Garcia Navarro, J.E.; Gonzalez de la Hoz, S.; Gonzalvo Rodriguez, G.R.; Guerrero Rojas, J.G.R.; Higon-Rodriguez, E.; Lacasta, C.; Lozano Bahilo, J.J.; Mamuzic, J.; Marti-Garcia, S.; Martinez Agullo, P.; Miralles Lopez, M.; Mitsou, V.A.; Moreno Llacer, M.; Navarro-Gonzalez, J.; Poveda, J.; Prades Ibañez, A.; Rodriguez Bosca, S.; Ruiz-Martinez, A.; Sabatini, P.; Salt, J.; Sayago Galvan, I.; Soldevila, U.; Sanchez, J.; Torro Pastor, E.; Valero, A.; Valls Ferrer, J.A.; Villaplana Perez, M.; Vos, M.
Title Measurements of sensor radiation damage in the ATLAS inner detector using leakage currents Type Journal Article
Year 2021 Publication (up) Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 16 Issue 8 Pages P08025 - 46pp
Keywords Radiation damage to detector materials (solid state); Detector modelling and simulations I (interaction of radiation with matter, interaction of photons with matter, interaction of hadrons with matter, etc)
Abstract Non-ionizing energy loss causes bulk damage to the silicon sensors of the ATLAS pixel and strip detectors. This damage has important implications for data-taking operations, charged-particle track reconstruction, detector simulations, and physics analysis. This paper presents simulations and measurements of the leakage current in the ATLAS pixel detector and semiconductor tracker as a function of location in the detector and time, using data collected in Run 1 (2010-2012) and Run 2 (2015-2018) of the Large Hadron Collider. The extracted fluence shows a much stronger vertical bar z vertical bar-dependence in the innermost layers than is seen in simulation. Furthermore, the overall fluence on the second innermost layer is significantly higher than in simulation, with better agreement in layers at higher radii. These measurements are important for validating the simulation models and can be used in part to justify safety factors for future detector designs and interventions.
Address [Duvnjak, D.; Jackson, P.; Kong, A. X. Y.; Oliver, J. L.; Ruggeri, T. A.; Sharma, A. S.; White, M. J.] Univ Adelaide, Dept Phys, Adelaide, SA, Australia
Corporate Author Thesis
Publisher IOP Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000706929300001 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 5004
Permanent link to this record
 

 
Author DUNE Collaboration (Abud, A.A. et al); Antonova, M.; Barenboim, G.; Cervera-Villanueva, A.; De Romeri, V.; Fernandez Menendez, P.; Garcia-Peris, M.A.; Izmaylov, A.; Martin-Albo, J.; Masud, M.; Mena, O.; Molina Bueno, L.; Novella, P.; Rubio, F.C.; Sorel, M.; Ternes, C.A.; Tortola, M.; Valle, J.W.F.
Title Design, construction and operation of the ProtoDUNE-SP Liquid Argon TPC Type Journal Article
Year 2022 Publication (up) Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 17 Issue 1 Pages P01005 - 111pp
Keywords Noble liquid detectors (scintillation, ionization, double-phase); Photon detectors for UV; visible and IR photons (solid-state) (PIN diodes, APDs, Si-PMTs, G-APDs, CCDs, EBCCDs, EMCCDs, CMOS imagers, etc); Scintillators; scintillation and light emission processes (solid, gas and liquid scintillators); Time projection Chambers (TPC)
Abstract The ProtoDUNE-SP detector is a single-phase liquid argon time projection chamber (LArTPC) that was constructed and operated in the CERN North Area at the end of the H4 beamline. This detector is a prototype for the first far detector module of the Deep Underground Neutrino Experiment (DUNE), which will be constructed at the Sandford Underground Research Facility (SURF) in Lead, South Dakota, U.S.A. The ProtoDUNE-SP detector incorporates full-size components as designed for DUNE and has an active volume of 7 x 6 x 7.2 m3. The H4 beam delivers incident particles with well-measured momenta and high-purity particle identification. ProtoDUNE-SP's successful operation between 2018 and 2020 demonstrates the effectiveness of the single-phase far detector design. This paper describes the design, construction, assembly and operation of the detector components.
Address [Fani, M.; Isenhower, L.] Abilene Christian Univ, Abilene, TX 79601 USA, Email: Stefania.Bordoni@cern.ch
Corporate Author Thesis
Publisher IOP Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000757487100001 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 5131
Permanent link to this record
 

 
Author Hiti, B.; Cindro, V.; Gorisek, A.; Franks, M.; Marco-Hernandez, R.; Kramberger, G.; Mandic, I.; Mikuz, M.; Powell, S.; Steininger, H.; Vilella, E.; Zavrtanik, M.; Zhang, C.
Title Characterisation of analogue front end and time walk in CMOS active pixel sensor Type Journal Article
Year 2021 Publication (up) Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 16 Issue 12 Pages P12020 - 12pp
Keywords Charge induction; Radiation-hard detectors; Solid state detectors
Abstract In this work we investigated a method to determine time walk in an active silicon pixel sensor prototype using Edge-TCT with infrared laser charge injection. Samples were investigated before and after neutron irradiation to 5 . 10(14) n(eq)/cm(2). Threshold, noise and calibration of the analogue front end were determined with external charge injection. A spatially sensitive measurement of collected charge and time walk was carried out with Edge-TCT, showing a uniform charge collection and output delay in pixel centre. On pixel edges charge sharing was observed due to finite beam width resulting in smaller signals and larger output delay. Time walk below 25 ns was observed for charge above 2000 e(-) at a threshold above the noise level. Time walk measurement with external charge injection yielded identical results.
Address [Hiti, B.; Cindro, V.; Gorisek, A.; Kramberger, G.; Mandic, I.; Mikuz, M.; Zavrtanik, M.] Jozef Stefan Inst, Jamova Cesta 39, Ljubljana, Slovenia, Email: bojan.hiti@ijs.si
Corporate Author Thesis
Publisher IOP Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000758055400055 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 5138
Permanent link to this record
 

 
Author ATLAS Collaboration (Aad, G. et al); Amos, K.R.; Aparisi Pozo, J.A.; Bailey, A.J.; Cabrera Urban, S.; Cardillo, F.; Castillo Gimenez, V.; Costa, M.J.; Didenko,, M.; Escobar, C.; Estrada Pastor, O.; Fiorini, L.; Fullana Torregrosa, E.; Fuster, J.; Garcia, C.; Garcia Navarro, J.E.; Gonzalez de la Hoz, S.; Gonzalvo Rodriguez, G.R.; Guerrero Rojas, J.G.R.; Higon-Rodriguez, E.; Lacasta, C.; Lozano Bahilo, J.J.; Mamuzic, J.; Marti-Garcia, S.; Martinez Agullo, P.; Miralles Lopez, M.; Mitsou, V.A.; Monsonis Romero, L.; Moreno Llacer, M.; Navarro-Gonzalez, J.; Poveda, J.; Prades Ibañez, A.; Ruiz-Martinez, A.; Sabatini, P.; Salt, J.; Sanchez Sebastian, V.; Sayago Galvan, I.; Soldevila, U.; Sanchez, J.; Torro Pastor, E.; Valero, A.; Valls Ferrer, J.A.; Villaplana Perez, M.; Vos, M.
Title Operation and performance of the ATLAS semiconductor tracker in LHC Run 2 Type Journal Article
Year 2022 Publication (up) Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 17 Issue 1 Pages P01013 - 56pp
Keywords Charge transport and multiplication in solid media; Particle tracking detectors (Solid-state detectors); Radiation damage to detector materials (solid state); Solid state detectors
Abstract The semiconductor tracker (SCT) is one of the tracking systems for charged particles in the ATLAS detector. It consists of 4088 silicon strip sensor modules. During Run 2 (2015-2018) the Large Hadron Collider delivered an integrated luminosity of 156 fb(-1) to the ATLAS experiment at a centre-of-mass proton-proton collision energy of 13 TeV. The instantaneous luminosity and pile-up conditions were far in excess of those assumed in the original design of the SCT detector. Due to improvements to the data acquisition system, the SCT operated stably throughout Run 2. It was available for 99.9% of the integrated luminosity and achieved a data-quality efficiency of 99.85%. Detailed studies have been made of the leakage current in SCT modules and the evolution of the full depletion voltage, which are used to study the impact of radiation damage to the modules. '
Address [Jackson, P.; Kong, A. X. Y.; Potti, H.; Ruggeri, T. A.; Sharma, A. S.; White, M. J.] Univ Adelaide, Dept Phys, Adelaide, SA, Australia
Corporate Author Thesis
Publisher IOP Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000766149300002 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 5174
Permanent link to this record
 

 
Author Mandic, I.; Cindro, V.; Debevc, J.; Gorisek, A.; Hiti, B.; Kramberger, G.; Skomina, P.; Zavrtanik, M.; Mikuz, M.; Vilella, E.; Zhang, C.; Powell, S.; Franks, M.; Marco-Hernandez, R.; Steininger, H.
Title Study of neutron irradiation effects in Depleted CMOS detector structures Type Journal Article
Year 2022 Publication (up) Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 17 Issue 3 Pages P03030 - 13pp
Keywords Particle tracking detectors (Solid-state detectors); Si microstrip and pad detectors; Solid state detectors
Abstract In this paper the results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivities ranging from 0.5 to 3 k Omega cm are presented. Samples were irradiated with reactor neutrons up to a fluence of 2.10(15) n(eq)/cm(2). The depletion depth was measured with Edge-TCT. The effective space charge concentration N-eff was estimated from the dependence of the depletion depth on bias voltage and studied as a function of neutron fluence. The dependence of N-eff on fluence changes with initial acceptor concentration in agreement with other measurements with p-type silicon. A long term accelerated annealing study of N-eff and detector current up to 1280 minutes at 60 degrees C was made. It was found that N-eff and current in reverse biased detector behave as expected for irradiated silicon.
Address [Mandic, I; Cindro, V; Debevc, J.; Gorisek, A.; Hiti, B.; Kramberger, G.; Skomina, P.; Zavrtanik, M.; Mikuz, M.] Jozef Stefan Inst, Jamova 39, Ljubljana, Slovenia, Email: igor.mandic@ijs.si
Corporate Author Thesis
Publisher IOP Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000784713600004 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 5208
Permanent link to this record