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Author Hiti, B.; Cindro, V.; Gorisek, A.; Franks, M.; Marco-Hernandez, R.; Kramberger, G.; Mandic, I.; Mikuz, M.; Powell, S.; Steininger, H.; Vilella, E.; Zavrtanik, M.; Zhang, C. url  doi
openurl 
  Title Characterisation of analogue front end and time walk in CMOS active pixel sensor Type Journal Article
  Year 2021 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.  
  Volume 16 Issue 12 Pages P12020 - 12pp  
  Keywords Charge induction; Radiation-hard detectors; Solid state detectors  
  Abstract In this work we investigated a method to determine time walk in an active silicon pixel sensor prototype using Edge-TCT with infrared laser charge injection. Samples were investigated before and after neutron irradiation to 5 . 10(14) n(eq)/cm(2). Threshold, noise and calibration of the analogue front end were determined with external charge injection. A spatially sensitive measurement of collected charge and time walk was carried out with Edge-TCT, showing a uniform charge collection and output delay in pixel centre. On pixel edges charge sharing was observed due to finite beam width resulting in smaller signals and larger output delay. Time walk below 25 ns was observed for charge above 2000 e(-) at a threshold above the noise level. Time walk measurement with external charge injection yielded identical results.  
  Address [Hiti, B.; Cindro, V.; Gorisek, A.; Kramberger, G.; Mandic, I.; Mikuz, M.; Zavrtanik, M.] Jozef Stefan Inst, Jamova Cesta 39, Ljubljana, Slovenia, Email: bojan.hiti@ijs.si  
  Corporate Author Thesis  
  Publisher IOP Publishing Ltd Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1748-0221 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000758055400055 Approved no  
  Is ISI yes International Collaboration (down) yes  
  Call Number IFIC @ pastor @ Serial 5138  
Permanent link to this record
 

 
Author ATLAS Collaboration (Aad, G. et al); Amos, K.R.; Aparisi Pozo, J.A.; Bailey, A.J.; Cabrera Urban, S.; Cardillo, F.; Castillo Gimenez, V.; Costa, M.J.; Didenko,, M.; Escobar, C.; Estrada Pastor, O.; Fiorini, L.; Fullana Torregrosa, E.; Fuster, J.; Garcia, C.; Garcia Navarro, J.E.; Gonzalez de la Hoz, S.; Gonzalvo Rodriguez, G.R.; Guerrero Rojas, J.G.R.; Higon-Rodriguez, E.; Lacasta, C.; Lozano Bahilo, J.J.; Mamuzic, J.; Marti-Garcia, S.; Martinez Agullo, P.; Miralles Lopez, M.; Mitsou, V.A.; Monsonis Romero, L.; Moreno Llacer, M.; Navarro-Gonzalez, J.; Poveda, J.; Prades Ibañez, A.; Ruiz-Martinez, A.; Sabatini, P.; Salt, J.; Sanchez Sebastian, V.; Sayago Galvan, I.; Soldevila, U.; Sanchez, J.; Torro Pastor, E.; Valero, A.; Valls Ferrer, J.A.; Villaplana Perez, M.; Vos, M. url  doi
openurl 
  Title Operation and performance of the ATLAS semiconductor tracker in LHC Run 2 Type Journal Article
  Year 2022 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.  
  Volume 17 Issue 1 Pages P01013 - 56pp  
  Keywords Charge transport and multiplication in solid media; Particle tracking detectors (Solid-state detectors); Radiation damage to detector materials (solid state); Solid state detectors  
  Abstract The semiconductor tracker (SCT) is one of the tracking systems for charged particles in the ATLAS detector. It consists of 4088 silicon strip sensor modules. During Run 2 (2015-2018) the Large Hadron Collider delivered an integrated luminosity of 156 fb(-1) to the ATLAS experiment at a centre-of-mass proton-proton collision energy of 13 TeV. The instantaneous luminosity and pile-up conditions were far in excess of those assumed in the original design of the SCT detector. Due to improvements to the data acquisition system, the SCT operated stably throughout Run 2. It was available for 99.9% of the integrated luminosity and achieved a data-quality efficiency of 99.85%. Detailed studies have been made of the leakage current in SCT modules and the evolution of the full depletion voltage, which are used to study the impact of radiation damage to the modules. '  
  Address [Jackson, P.; Kong, A. X. Y.; Potti, H.; Ruggeri, T. A.; Sharma, A. S.; White, M. J.] Univ Adelaide, Dept Phys, Adelaide, SA, Australia  
  Corporate Author Thesis  
  Publisher IOP Publishing Ltd Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1748-0221 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000766149300002 Approved no  
  Is ISI yes International Collaboration (down) yes  
  Call Number IFIC @ pastor @ Serial 5174  
Permanent link to this record
 

 
Author Mandic, I.; Cindro, V.; Debevc, J.; Gorisek, A.; Hiti, B.; Kramberger, G.; Skomina, P.; Zavrtanik, M.; Mikuz, M.; Vilella, E.; Zhang, C.; Powell, S.; Franks, M.; Marco-Hernandez, R.; Steininger, H. url  doi
openurl 
  Title Study of neutron irradiation effects in Depleted CMOS detector structures Type Journal Article
  Year 2022 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.  
  Volume 17 Issue 3 Pages P03030 - 13pp  
  Keywords Particle tracking detectors (Solid-state detectors); Si microstrip and pad detectors; Solid state detectors  
  Abstract In this paper the results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivities ranging from 0.5 to 3 k Omega cm are presented. Samples were irradiated with reactor neutrons up to a fluence of 2.10(15) n(eq)/cm(2). The depletion depth was measured with Edge-TCT. The effective space charge concentration N-eff was estimated from the dependence of the depletion depth on bias voltage and studied as a function of neutron fluence. The dependence of N-eff on fluence changes with initial acceptor concentration in agreement with other measurements with p-type silicon. A long term accelerated annealing study of N-eff and detector current up to 1280 minutes at 60 degrees C was made. It was found that N-eff and current in reverse biased detector behave as expected for irradiated silicon.  
  Address [Mandic, I; Cindro, V; Debevc, J.; Gorisek, A.; Hiti, B.; Kramberger, G.; Skomina, P.; Zavrtanik, M.; Mikuz, M.] Jozef Stefan Inst, Jamova 39, Ljubljana, Slovenia, Email: igor.mandic@ijs.si  
  Corporate Author Thesis  
  Publisher IOP Publishing Ltd Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1748-0221 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000784713600004 Approved no  
  Is ISI yes International Collaboration (down) yes  
  Call Number IFIC @ pastor @ Serial 5208  
Permanent link to this record
 

 
Author Esperante-Pereira, D. doi  openurl
  Title DEPFET active pixel sensors for the vertex detector of the Belle-II experiment Type Journal Article
  Year 2014 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.  
  Volume 9 Issue Pages C03004 - 11pp  
  Keywords Particle tracking detectors; Solid state detectors; Particle tracking detectors (Solid-state detectors)  
  Abstract Active pixels sensors based on the DEPFET technology will be used for the innermost vertex detector of the future Belle-II experiment. The increased luminosity of the e(+) e(-) SuperKEKB collider entails challenging detector requirements, namely: low material budget, low power consumption, high precision and efficiency, and a large readout rate. The DEPFET active pixel technology has shown to be a suitable solution for this purpose. A review of the different aspects of the detector design (sensors, readout ASICS and supplementary infrastructure) and the results of the latest thinned sensor prototypes (50 μm) are described.  
  Address Univ Valencia, CSIC, IFIC Inst Fis Corpuscular, Valencia 46980, Spain, Email: daniel.esperante@csic.es  
  Corporate Author Thesis  
  Publisher Iop Publishing Ltd Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1748-0221 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000336123200004 Approved no  
  Is ISI yes International Collaboration (down) no  
  Call Number IFIC @ pastor @ Serial 1803  
Permanent link to this record
 

 
Author Barrio, J.; Etxebeste, A.; Lacasta, C.; Muñoz, E.; Oliver, J.F.; Solaz, C.; Llosa, G. doi  openurl
  Title Performance of VATA64HDR16 ASIC for medical physics applications based on continuous crystals and SiPMs Type Journal Article
  Year 2015 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.  
  Volume 10 Issue Pages P12001 - 12pp  
  Keywords Solid state detectors; Photon detectors for UV, visible and IR photons (solid-state) (PIN diodes, APDs, Si-PMTs, G-APDs, CCDs, EBCCDs, EMCCDs etc); Front-end electronics for detector readout; Gamma detectors (scintillators, CZT, HPG, HgI etc)  
  Abstract Detectors based on Silicon Photomultipliers (SiPMs) coupled to continuous crystals are being tested in medical physics applications due to their potential high resolution and sensitivity. To cope with the high granularity required for a very good spatial resolution, SiPM matrices with a large amount of elements are needed. To be able to read the information coming from each individual channel, dedicated ASICs are employed. The VATA64HDR16 ASIC is a 64-channel, charge-sensitive amplifier that converts the collected charge into a proportional current or voltage signal. A complete assessment of the suitability of that ASIC for medical physics applications based on continuous crystals and SiPMs has been carried out. The input charge range is linear from 20 pC up to 55 pC. The energy resolution obtained at 511 keV is 10% FWHM with a LaBr3 crystal and 16% FWHM with a LYSO crystal. A coincidence timing resolution of 24 ns FWHM is obtained with two LYSO crystals.  
  Address [Barrio, J.; Etxebeste, A.; Lacasta, C.; Munoz, E.; Oliver, J. F.; Solaz, C.; Llosa, G.] Univ Valencia, CSIC, Inst Fis Corpuscular, Parque Cient,C Catedrat Jose Beltran 2, E-46980 Paterna, Spain, Email: John.Barrio@ific.uv.es  
  Corporate Author Thesis  
  Publisher Iop Publishing Ltd Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1748-0221 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000369998500034 Approved no  
  Is ISI yes International Collaboration (down) no  
  Call Number IFIC @ pastor @ Serial 2548  
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