Abstract: This work aims to present the current state of simulations of electroluminescence (EL) produced in gas-based detectors with special interest for NEXT – Neutrino Experiment with a Xenon TPC. NEXT is a neutrinoless double beta decay experiment, thus needs outstanding energy resolution which can be achieved by using electroluminescence. The process of light production is reviewed and properties such as EL yield and associated fluctuations, excitation and electroluminescence efficiencies, and energy resolution, are calculated. An EL production region with a 5 mm width gap between two infinite parallel planes is considered, where a uniform electric field is produced. The pressure and temperature considered are 10 bar and 293 K, respectively. The results show that, even for low values of VUV photon detection efficiency, good energy resolution can be achieved: below 0.4% (FWHM) at Q(beta beta) = 2.458 MeV.

Abstract: NEXT-100 experiment aims at searching the neutrinoless double-beta decay of the Xe-136 isotope using a TPC filled with a 100 kg of high-pressure gaseous xenon, with 90% isotopic enrichment. The experiment will take place at the Laboratorio Subterraneo de Canfranc (LSC), Spain. NEXT-100 uses electroluminescence (EL) technology for energy measurement with a resolution better than 1% FWHM. The gaseous xenon in the TPC additionally allows the tracks of the two beta particles to be recorded, which are expected to have a length of up to 30 cm at 10 bar pressure. The ability to record the topological signature of the beta beta 0 nu events provides a powerful background rejection factor for the beta beta experiment. In this paper, we present a novel 3D imaging concept using SiPMs coated with tetraphenyl butadiene (TPB) for the EL read out and its first implementation in NEXT-DEMO, a large-scale prototype of the NEXT-100 experiment. The design and the first characterization measurements of the NEXT-DEMO SiPM tracking system are presented. The SiPM response uniformity over the tracking plane drawn from its gain map is shown to be better than 4%. An automated active control system for the stabilization of the SiPMs gain was developed, based on the voltage supply compensation of the gain drifts. The gain is shown to be stabilized within 0.2% relative variation around its nominal value, provided by Hamamatsu, in a temperature range of 10 degrees C. The noise level from the electronics and the SiPM dark noise is shown to lay typically below the level of 10 photoelectrons (pe) in the ADC. Hence, a detection threshold at 10 pe is set for the acquisition of the tracking signals. The ADC full dynamic range (4096 channels) is shown to be adequate for signal levels of up to 200 pe/mu s, which enables recording most of the tracking signals.

Abstract: In this paper the results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivities ranging from 0.5 to 3 k Omega cm are presented. Samples were irradiated with reactor neutrons up to a fluence of 2.10(15) n(eq)/cm(2). The depletion depth was measured with Edge-TCT. The effective space charge concentration N-eff was estimated from the dependence of the depletion depth on bias voltage and studied as a function of neutron fluence. The dependence of N-eff on fluence changes with initial acceptor concentration in agreement with other measurements with p-type silicon. A long term accelerated annealing study of N-eff and detector current up to 1280 minutes at 60 degrees C was made. It was found that N-eff and current in reverse biased detector behave as expected for irradiated silicon.

Abstract: The ATLAS experiment is constructing new all-silicon inner tracking system for HL-LHC. The strip detectors cover the radial extent of 40 to 100 cm. A new approach is adopted to use p-type silicon material, making the readout in n+-strips, so-called n+-in-p sensors. This allows for enhanced radiation tolerance against an order of magnitude higher particle fluence compared to the LHC. To cope with varying hit rates and occupancies as a function of radial distance, there are two barrel sensor types, the short strips (SS) for the inner 2 and the long strips (LS) for the outer 2 barrel cylinders, respectively. The barrel sensors exhibit a square, 9.8 x 9.8 cm2, geometry, the largest possible sensor area from a 6-inch wafer. The strips are laid out in parallel with a strip pitch of 75.5 μm and 4 or 2 rows of strip segments. The strips are AC-coupled and biased via polysilicon resistors. The endcap sensors employ a “stereo-annulus” geometry exhibiting a skewed-trapezoid shapes with circular edges. They are designed in 6 unique shapes, R0 to R5, corresponding to progressively increasing radial extents and which allows them to fit within the petal geometry and the 6-inch wafer maximally. The strips are in fan-out geometry with an in-built rotation angle, with a mean pitch of approximately 75 μm and 4 or 2 rows of strip segments. The eight sensor types are labeled as ATLAS18xx where xx stands for SS, LS, and R0 to R5. According to the mechanical and electrical specifications, CAD files for wafer processing were laid out, following the successful designs of prototype barrel and endcap sensors, together with a number of optimizations. A pre-production was carried out prior to the full production of the wafers. The quality of the sensors is reviewed and judged excellent through the test results carried out by vendor. These sensors are used for establishing acceptance procedures and to evaluate their performance in the ATLAS collaboration, and subsequently for pre-production of strip modules and stave and petal structures.

Abstract: In the high luminosity era of the Large Hadron Collider, the instantaneous luminosity is expected to reach unprecedented values, resulting in about 200 proton-proton interactions in a typical bunch crossing. To cope with the resultant increase in occupancy, bandwidth and radiation damage, the ATLAS Inner Detector will be replaced by an all-silicon system, the Inner Tracker (ITk). The ITk consists of a silicon pixel and a strip detector and exploits the concept of modularity. Prototyping and testing of various strip detector components has been carried out. This paper presents the developments and results obtained with reduced-size structures equivalent to those foreseen to be used in the forward region of the silicon strip detector. Referred to as petalets, these structures are built around a composite sandwich with embedded cooling pipes and electrical tapes for routing the signals and power. Detector modules built using electronic flex boards and silicon strip sensors are glued on both the front and back side surfaces of the carbon structure. Details are given on the assembly, testing and evaluation of several petalets. Measurement results of both mechanical and electrical quantities are shown. Moreover, an outlook is given for improved prototyping plans for large structures.