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NEXT Collaboration(Alvarez, V. et al), Carcel, S., Cervera-Villanueva, A., Diaz, J., Ferrario, P., Gil, A., et al. (2014). Description and commissioning of NEXT-MM prototype: first results from operation in a Xenon-Trimethylamine gas mixture. J. Instrum., 9, P03010–22pp.
Abstract: A technical description of NEXT-MM and its commissioning and first performance is reported. Having an active volume of similar to 35 cm drift x 28 cm diameter, it constitutes the largest Micromegas-read TPC operated in Xenon ever constructed, made by a sectorial arrangement of the 4 largest single wafers manufactured with the Microbulk technique to date. It is equipped with a suitably pixelized readout and with a sufficiently large sensitive volume (similar to 23 l) so as to contain long (similar to 20 cm) electron tracks. First results obtained at 1 bar for Xenon and Trymethylamine (Xe-(2%) TMA) mixture are presented. The TPC can accurately reconstruct extended background tracks. An encouraging full-width half-maximum of 11.6% was obtained for similar to 29 keV gammas without resorting to any data post-processing.
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Diez, S. et al, Bernabeu Verdu, J., Civera, J. V., Garcia, C., Garcia-Argos, C., Lacasta, C., et al. (2014). A double-sided, shield-less stave prototype for the ATLAS Upgrade strip tracker for the High Luminosity LHC. J. Instrum., 9, P03012–16pp.
Abstract: A detailed description of the integration structures for the barrel region of the silicon strips tracker of the ATLAS Phase-II upgrade for the upgrade of the Large Hadron Collider, the so-called High Luminosity LHC (HL-LHC), is presented. This paper focuses on one of the latest demonstrator prototypes recently assembled, with numerous unique features. It consists of a shortened, shield-less, and double sided stave, with two candidate power distributions implemented. Thermal and electrical performances of the prototype are presented, as well as a description of the assembly procedures and tools.
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NEXT Collaboration(Haefner, J. et al), Benlloch-Rodriguez, J. M., Carcel, S., Carrion, J. V., Martin-Albo, J., Martinez-Vara, M., et al. (2023). Reflectance and fluorescence characteristics of PTFE coated with TPB at visible, UV, and VUV as a function of thickness. J. Instrum., 18(3), P03016–21pp.
Abstract: Polytetrafluoroethylene (PTFE) is an excellent diffuse reflector widely used in light collection systems for particle physics experiments. In noble element systems, it is often coated with tetraphenyl butadiene (TPB) to allow detection of vacuum ultraviolet scintillation light. In this work this dependence is investigated for PTFE coated with TPB in air for light of wavelengths of 200 nm, 260 nm, and 450 nm. The results show that TPB-coated PTFE has a reflectance of approximately 92% for thicknesses ranging from 5 mm to 10 mm at 450 nm, with negligible variation as a function of thickness within this range. A cross-check of these results using an argon chamber supports the conclusion that the change in thickness from 5 mm to 10 mm does not affect significantly the light response at 128 nm. Our results indicate that pieces of TPB-coated PTFE thinner than the typical 10 mm can be used in particle physics detectors without compromising the light signal.
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Poley, L., Blue, A., Bloch, I., Buttar, C., Fadeyev, V., Fernandez-Tejero, J., et al. (2019). Mapping the depleted area of silicon diodes using a micro-focused X-ray beam. J. Instrum., 14, P03024–14pp.
Abstract: For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker (ITk). The ITk will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of 500V to maintain a low noise and power dissipation. In order to minimise sensor leakage currents, particularly in the high-radiation environment inside the ATLAS detector, sensors are foreseen to be operated at low temperatures and to be manufactured from wafers with a high bulk resistivity of several k Omega.cm. Simulations showed the electric field inside sensors with high bulk resistivity to extend towards the sensor edge, which could lead to increased surface currents for narrow dicing edges. In order to map the electric field inside biased silicon sensors with high bulk resistivity, three diodes from ATLAS silicon strip sensor prototype wafers were studied with a monochromatic, micro-focused X-ray beam at the Diamond Light Source (Didcot, U.K.). For all devices under investigation, the electric field inside the diode was mapped and its dependence on the applied bias voltage was studied.
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Mandic, I., Cindro, V., Debevc, J., Gorisek, A., Hiti, B., Kramberger, G., et al. (2022). Study of neutron irradiation effects in Depleted CMOS detector structures. J. Instrum., 17(3), P03030–13pp.
Abstract: In this paper the results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivities ranging from 0.5 to 3 k Omega cm are presented. Samples were irradiated with reactor neutrons up to a fluence of 2.10(15) n(eq)/cm(2). The depletion depth was measured with Edge-TCT. The effective space charge concentration N-eff was estimated from the dependence of the depletion depth on bias voltage and studied as a function of neutron fluence. The dependence of N-eff on fluence changes with initial acceptor concentration in agreement with other measurements with p-type silicon. A long term accelerated annealing study of N-eff and detector current up to 1280 minutes at 60 degrees C was made. It was found that N-eff and current in reverse biased detector behave as expected for irradiated silicon.
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