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Author |
Kuehn, S. et al; Bernabeu, J.; Lacasta, C.; Marco-Hernandez, R.; Rodriguez Rodriguez, D.; Santoyo, D.; Solaz, C.; Soldevila Serrano, U. |
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Title |
Prototyping of petalets for the Phase-II upgrade of the silicon strip tracking detector of the ATLAS experiment |
Type |
Journal Article |
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Year |
2018 |
Publication |
Journal of Instrumentation |
Abbreviated Journal |
J. Instrum. |
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Volume |
13 |
Issue |
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Pages |
T03004 - 22pp |
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Keywords |
Particle tracking detectors (Solid-state detectors); Si microstrip and pad detectors; Solid state detectors; Performance of High Energy Physics Detectors |
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Abstract |
In the high luminosity era of the Large Hadron Collider, the instantaneous luminosity is expected to reach unprecedented values, resulting in about 200 proton-proton interactions in a typical bunch crossing. To cope with the resultant increase in occupancy, bandwidth and radiation damage, the ATLAS Inner Detector will be replaced by an all-silicon system, the Inner Tracker (ITk). The ITk consists of a silicon pixel and a strip detector and exploits the concept of modularity. Prototyping and testing of various strip detector components has been carried out. This paper presents the developments and results obtained with reduced-size structures equivalent to those foreseen to be used in the forward region of the silicon strip detector. Referred to as petalets, these structures are built around a composite sandwich with embedded cooling pipes and electrical tapes for routing the signals and power. Detector modules built using electronic flex boards and silicon strip sensors are glued on both the front and back side surfaces of the carbon structure. Details are given on the assembly, testing and evaluation of several petalets. Measurement results of both mechanical and electrical quantities are shown. Moreover, an outlook is given for improved prototyping plans for large structures. |
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Address |
[Kuehn, S.] European Org Nucl Res, CERN, Geneva, Switzerland, Email: susanne.kuehn@cern.ch |
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Publisher |
Iop Publishing Ltd |
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Language |
English |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1748-0221 |
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Expedition |
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Conference |
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Notes |
WOS:000428146400003 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
3530 |
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Author |
Kuehn, S. et al; Bernabeu, J.; Lacasta, C.; Marco-Hernandez, R.; Santoyo, D.; Solaz, C.; Soldevila, U. |
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Title |
Prototyping of hybrids and modules for the forward silicon strip tracking detector for the ATLAS Phase-II upgrade |
Type |
Journal Article |
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Year |
2017 |
Publication |
Journal of Instrumentation |
Abbreviated Journal |
J. Instrum. |
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Volume |
12 |
Issue |
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Pages |
P05015 - 26pp |
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Keywords |
Si microstrip and pad detectors; Particle tracking detectors (Solid-state detectors); Solid state detectors |
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Abstract |
For the High-Luminosity upgrade of the Large Hadron Collider an increased instantaneous luminosity of up to 7.5 . 10(34) cm(-2) s(-1), leading to a total integrated luminosity of up to 3000 fb(-1), is foreseen. The current silicon and transition radiation tracking detectors of the ATLAS experiment will be unable to cope with the increased track densities and radiation levels, and will need to be replaced. The new tracking detector will consist entirely of silicon pixel and strip detectors. In this paper, results on the development and tests of prototype components for the new silicon strip detector in the forward regions (end-caps) of the ATLAS detector are presented. Flex-printed readout boards with fast readout chips, referred to as hybrids, and silicon detector modules are investigated. The modules consist of a hybrid glued onto a silicon strip sensor. The channels on both are connected via wire-bonds for readout and powering. Measurements of important performance parameters and a comparison of two possible readout schemes are presented. In addition, the assembly procedure is described and recommendations for further prototyping are derived. |
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Address |
[Kuehn, S.] CERN, European Org Nucl Res, Expt Phys, Route Meyrin 385, CH-1211 Geneva 23, Switzerland, Email: susanne.kuehn@cern.ch |
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Corporate Author |
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Thesis |
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Publisher |
Iop Publishing Ltd |
Place of Publication |
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Language |
English |
Summary Language |
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Original Title |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1748-0221 |
ISBN |
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Area |
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Expedition |
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Conference |
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Notes |
WOS:000405076000015 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
3221 |
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Author |
Mandic, I.; Cindro, V.; Debevc, J.; Gorisek, A.; Hiti, B.; Kramberger, G.; Skomina, P.; Zavrtanik, M.; Mikuz, M.; Vilella, E.; Zhang, C.; Powell, S.; Franks, M.; Marco-Hernandez, R.; Steininger, H. |
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Title |
Study of neutron irradiation effects in Depleted CMOS detector structures |
Type |
Journal Article |
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Year |
2022 |
Publication |
Journal of Instrumentation |
Abbreviated Journal |
J. Instrum. |
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Volume |
17 |
Issue |
3 |
Pages |
P03030 - 13pp |
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Keywords |
Particle tracking detectors (Solid-state detectors); Si microstrip and pad detectors; Solid state detectors |
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Abstract |
In this paper the results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivities ranging from 0.5 to 3 k Omega cm are presented. Samples were irradiated with reactor neutrons up to a fluence of 2.10(15) n(eq)/cm(2). The depletion depth was measured with Edge-TCT. The effective space charge concentration N-eff was estimated from the dependence of the depletion depth on bias voltage and studied as a function of neutron fluence. The dependence of N-eff on fluence changes with initial acceptor concentration in agreement with other measurements with p-type silicon. A long term accelerated annealing study of N-eff and detector current up to 1280 minutes at 60 degrees C was made. It was found that N-eff and current in reverse biased detector behave as expected for irradiated silicon. |
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Address |
[Mandic, I; Cindro, V; Debevc, J.; Gorisek, A.; Hiti, B.; Kramberger, G.; Skomina, P.; Zavrtanik, M.; Mikuz, M.] Jozef Stefan Inst, Jamova 39, Ljubljana, Slovenia, Email: igor.mandic@ijs.si |
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Corporate Author |
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Publisher |
IOP Publishing Ltd |
Place of Publication |
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Editor |
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Language |
English |
Summary Language |
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Original Title |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1748-0221 |
ISBN |
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Area |
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Expedition |
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Conference |
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Notes |
WOS:000784713600004 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
5208 |
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Author |
Miñano, M. |
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Title |
Radiation Hard Silicon Strips Detectors for the SLHC |
Type |
Journal Article |
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Year |
2011 |
Publication |
IEEE Transactions on Nuclear Science |
Abbreviated Journal |
IEEE Trans. Nucl. Sci. |
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Volume |
58 |
Issue |
3 |
Pages |
1135-1140 |
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Keywords |
High energy physics; microstrip; radiation detectors; silicon; SLHC |
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Abstract |
While the Large Hadron Collider (LHC) began taking data in 2009, scenarios for a machine upgrade to achieve a much higher luminosity are being developed. In the current planning, it is foreseen to increase the luminosity of the LHC at CERN around 2018. As radiation damage scales with integrated luminosity, the particle physics experiments will need to be equipped with a new generation of radiation hard detectors. This article reports on the status of the R&D projects on radiation hard silicon strips detectors for particle physics, linked to the Large Hadron Collider Upgrade, super-LHC (sLHC) of the ATLAS microstrip detector. The primary focus of this report is on measuring the radiation hardness of the silicon materials and the detectors under study. This involves designing silicon detectors, irradiating them to the sLHC radiation levels and studying their performance as particle detectors. The most promising silicon detector for the different radiation levels in the different regions of the ATLAS microstrip detector will be presented. Important challenges related to engineering layout, powering, cooling and reading out a very large strip detector are presented. Ideas on possible schemes for the layout and support mechanics will be shown. |
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Address |
IFIC UV CSIC, Inst Fis Corpuscular, E-46071 Valencia, Spain, Email: mercedes.minano@ific.uv.es |
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Corporate Author |
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Publisher |
Ieee-Inst Electrical Electronics Engineers Inc |
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Language |
English |
Summary Language |
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Original Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0018-9499 |
ISBN |
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Conference |
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Notes |
ISI:000291659300001 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
no |
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Call Number |
IFIC @ pastor @ |
Serial |
651 |
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| Permanent link to this record |
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Author |
Poley, L.; Blue, A.; Bloch, I.; Buttar, C.; Fadeyev, V.; Fernandez-Tejero, J.; Fleta, C.; Hacker, J.; Lacasta, C.; Miñano, M.; Renzmann, M.; Rossi, E.; Sawyer, C.; Sperlich, D.; Stegler, M.; Ullan, M.; Unno, Y. |
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Title |
Mapping the depleted area of silicon diodes using a micro-focused X-ray beam |
Type |
Journal Article |
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Year |
2019 |
Publication |
Journal of Instrumentation |
Abbreviated Journal |
J. Instrum. |
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Volume |
14 |
Issue |
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Pages |
P03024 - 14pp |
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Keywords |
Si microstrip and pad detectors; Detector design and construction technologies and materials; Particle tracking detectors (Solid-state detectors); Radiation-hard detectors |
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Abstract |
For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker (ITk). The ITk will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of 500V to maintain a low noise and power dissipation. In order to minimise sensor leakage currents, particularly in the high-radiation environment inside the ATLAS detector, sensors are foreseen to be operated at low temperatures and to be manufactured from wafers with a high bulk resistivity of several k Omega.cm. Simulations showed the electric field inside sensors with high bulk resistivity to extend towards the sensor edge, which could lead to increased surface currents for narrow dicing edges. In order to map the electric field inside biased silicon sensors with high bulk resistivity, three diodes from ATLAS silicon strip sensor prototype wafers were studied with a monochromatic, micro-focused X-ray beam at the Diamond Light Source (Didcot, U.K.). For all devices under investigation, the electric field inside the diode was mapped and its dependence on the applied bias voltage was studied. |
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Address |
[Poley, L.] Lawrence Berkeley Natl Lab, Cyclotron Rd, Berkeley, CA 94720 USA, Email: Anne-Luise.Poley@desy.de |
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Corporate Author |
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Thesis |
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Publisher |
Iop Publishing Ltd |
Place of Publication |
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Editor |
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Language |
English |
Summary Language |
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Original Title |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1748-0221 |
ISBN |
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Medium |
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Area |
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Expedition |
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Conference |
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Notes |
WOS:000463330900012 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
3973 |
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| Permanent link to this record |
