| Records |
Author  |
Hiti, B.; Cindro, V.; Gorisek, A.; Franks, M.; Marco-Hernandez, R.; Kramberger, G.; Mandic, I.; Mikuz, M.; Powell, S.; Steininger, H.; Vilella, E.; Zavrtanik, M.; Zhang, C. |
| Title |
Characterisation of analogue front end and time walk in CMOS active pixel sensor |
Type |
Journal Article |
| Year |
2021 |
Publication |
Journal of Instrumentation |
Abbreviated Journal |
J. Instrum. |
| Volume |
16 |
Issue |
12 |
Pages |
P12020 - 12pp |
| Keywords |
Charge induction; Radiation-hard detectors; Solid state detectors |
| Abstract |
In this work we investigated a method to determine time walk in an active silicon pixel sensor prototype using Edge-TCT with infrared laser charge injection. Samples were investigated before and after neutron irradiation to 5 . 10(14) n(eq)/cm(2). Threshold, noise and calibration of the analogue front end were determined with external charge injection. A spatially sensitive measurement of collected charge and time walk was carried out with Edge-TCT, showing a uniform charge collection and output delay in pixel centre. On pixel edges charge sharing was observed due to finite beam width resulting in smaller signals and larger output delay. Time walk below 25 ns was observed for charge above 2000 e(-) at a threshold above the noise level. Time walk measurement with external charge injection yielded identical results. |
| Address |
[Hiti, B.; Cindro, V.; Gorisek, A.; Kramberger, G.; Mandic, I.; Mikuz, M.; Zavrtanik, M.] Jozef Stefan Inst, Jamova Cesta 39, Ljubljana, Slovenia, Email: bojan.hiti@ijs.si |
| Corporate Author |
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Thesis |
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| Publisher |
IOP Publishing Ltd |
Place of Publication |
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| Language |
English |
Summary Language |
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Original Title |
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| Series Editor |
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Series Title |
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Abbreviated Series Title |
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| Series Volume |
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Series Issue |
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Edition |
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| ISSN |
1748-0221 |
ISBN |
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Medium |
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| Area |
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Expedition |
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Conference |
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| Notes |
WOS:000758055400055 |
Approved |
no |
| Is ISI |
yes |
International Collaboration |
yes |
| Call Number |
IFIC @ pastor @ |
Serial |
5138 |
| Permanent link to this record |
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| Author |
Kuehn, S. et al; Bernabeu, J.; Lacasta, C.; Marco-Hernandez, R.; Rodriguez Rodriguez, D.; Santoyo, D.; Solaz, C.; Soldevila Serrano, U. |
| Title |
Prototyping of petalets for the Phase-II upgrade of the silicon strip tracking detector of the ATLAS experiment |
Type |
Journal Article |
| Year |
2018 |
Publication |
Journal of Instrumentation |
Abbreviated Journal |
J. Instrum. |
| Volume |
13 |
Issue |
|
Pages |
T03004 - 22pp |
| Keywords |
Particle tracking detectors (Solid-state detectors); Si microstrip and pad detectors; Solid state detectors; Performance of High Energy Physics Detectors |
| Abstract |
In the high luminosity era of the Large Hadron Collider, the instantaneous luminosity is expected to reach unprecedented values, resulting in about 200 proton-proton interactions in a typical bunch crossing. To cope with the resultant increase in occupancy, bandwidth and radiation damage, the ATLAS Inner Detector will be replaced by an all-silicon system, the Inner Tracker (ITk). The ITk consists of a silicon pixel and a strip detector and exploits the concept of modularity. Prototyping and testing of various strip detector components has been carried out. This paper presents the developments and results obtained with reduced-size structures equivalent to those foreseen to be used in the forward region of the silicon strip detector. Referred to as petalets, these structures are built around a composite sandwich with embedded cooling pipes and electrical tapes for routing the signals and power. Detector modules built using electronic flex boards and silicon strip sensors are glued on both the front and back side surfaces of the carbon structure. Details are given on the assembly, testing and evaluation of several petalets. Measurement results of both mechanical and electrical quantities are shown. Moreover, an outlook is given for improved prototyping plans for large structures. |
| Address |
[Kuehn, S.] European Org Nucl Res, CERN, Geneva, Switzerland, Email: susanne.kuehn@cern.ch |
| Corporate Author |
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Thesis |
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| Publisher |
Iop Publishing Ltd |
Place of Publication |
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Editor |
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| Language |
English |
Summary Language |
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Original Title |
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Series Title |
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Abbreviated Series Title |
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| Series Volume |
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Series Issue |
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Edition |
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| ISSN |
1748-0221 |
ISBN |
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Medium |
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| Area |
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Expedition |
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Conference |
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| Notes |
WOS:000428146400003 |
Approved |
no |
| Is ISI |
yes |
International Collaboration |
yes |
| Call Number |
IFIC @ pastor @ |
Serial |
3530 |
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| Author |
Kuehn, S. et al; Bernabeu, J.; Lacasta, C.; Marco-Hernandez, R.; Santoyo, D.; Solaz, C.; Soldevila, U. |
| Title |
Prototyping of hybrids and modules for the forward silicon strip tracking detector for the ATLAS Phase-II upgrade |
Type |
Journal Article |
| Year |
2017 |
Publication |
Journal of Instrumentation |
Abbreviated Journal |
J. Instrum. |
| Volume |
12 |
Issue |
|
Pages |
P05015 - 26pp |
| Keywords |
Si microstrip and pad detectors; Particle tracking detectors (Solid-state detectors); Solid state detectors |
| Abstract |
For the High-Luminosity upgrade of the Large Hadron Collider an increased instantaneous luminosity of up to 7.5 . 10(34) cm(-2) s(-1), leading to a total integrated luminosity of up to 3000 fb(-1), is foreseen. The current silicon and transition radiation tracking detectors of the ATLAS experiment will be unable to cope with the increased track densities and radiation levels, and will need to be replaced. The new tracking detector will consist entirely of silicon pixel and strip detectors. In this paper, results on the development and tests of prototype components for the new silicon strip detector in the forward regions (end-caps) of the ATLAS detector are presented. Flex-printed readout boards with fast readout chips, referred to as hybrids, and silicon detector modules are investigated. The modules consist of a hybrid glued onto a silicon strip sensor. The channels on both are connected via wire-bonds for readout and powering. Measurements of important performance parameters and a comparison of two possible readout schemes are presented. In addition, the assembly procedure is described and recommendations for further prototyping are derived. |
| Address |
[Kuehn, S.] CERN, European Org Nucl Res, Expt Phys, Route Meyrin 385, CH-1211 Geneva 23, Switzerland, Email: susanne.kuehn@cern.ch |
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Thesis |
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| Publisher |
Iop Publishing Ltd |
Place of Publication |
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Editor |
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| Language |
English |
Summary Language |
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Original Title |
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| Series Editor |
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Series Title |
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Abbreviated Series Title |
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| Series Volume |
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Series Issue |
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Edition |
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| ISSN |
1748-0221 |
ISBN |
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Medium |
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| Area |
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Expedition |
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Conference |
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| Notes |
WOS:000405076000015 |
Approved |
no |
| Is ISI |
yes |
International Collaboration |
yes |
| Call Number |
IFIC @ pastor @ |
Serial |
3221 |
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| Author |
Loya Villalpando, A.A.; Martin-Albo, J.; Chen, W.T.; Guenette, R.; Lego, C.; Park, J.S.; Capasso, F. |
| Title |
Improving the light collection efficiency of silicon photomultipliers through the use of metalenses |
Type |
Journal Article |
| Year |
2020 |
Publication |
Journal of Instrumentation |
Abbreviated Journal |
J. Instrum. |
| Volume |
15 |
Issue |
11 |
Pages |
P11021 - 13pp |
| Keywords |
Optical detector readout concepts; Solid state detectors; Dark Matter detectors (WIMPS, axions, etc); Double-beta decay detectors |
| Abstract |
Metalenses are optical devices that implement nanostructures as phase shifters to focus incident light. Their compactness and simple fabrication make them a potential cost-effective solution for increasing light collection efficiency in particle detectors with limited photosensitive area coverage. Here we report on the characterization and performance of metalenses in increasing the light collection efficiency of silicon photomultipliers (SiPM) of various sizes using an LED of 630 nm, and find a six to seven-fold increase in signal for a 1.3 x 1 3 mm(2) SiPM when coupled with a 10-mm-diameter metalens manufactured using deep ultraviolet stepper lithography. Such improvements could be valuable for future generations of particle detectors, particularly those employed in rare-event searches such as dark matter and neutrinoless double beta decay. |
| Address |
[Villalpando, A. A. Loya; Martin-Albo, J.; Guenette, R.; Lego, C.] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA, Email: aloyavil@caltech.edu |
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Thesis |
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| Publisher |
Iop Publishing Ltd |
Place of Publication |
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Editor |
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| Language |
English |
Summary Language |
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Original Title |
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Series Title |
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Abbreviated Series Title |
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| Series Volume |
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Series Issue |
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Edition |
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| ISSN |
1748-0221 |
ISBN |
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Medium |
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| Area |
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Expedition |
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Conference |
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| Notes |
WOS:000595650800009 |
Approved |
no |
| Is ISI |
yes |
International Collaboration |
yes |
| Call Number |
IFIC @ pastor @ |
Serial |
4634 |
| Permanent link to this record |
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| Author |
Mandic, I.; Cindro, V.; Debevc, J.; Gorisek, A.; Hiti, B.; Kramberger, G.; Skomina, P.; Zavrtanik, M.; Mikuz, M.; Vilella, E.; Zhang, C.; Powell, S.; Franks, M.; Marco-Hernandez, R.; Steininger, H. |
| Title |
Study of neutron irradiation effects in Depleted CMOS detector structures |
Type |
Journal Article |
| Year |
2022 |
Publication |
Journal of Instrumentation |
Abbreviated Journal |
J. Instrum. |
| Volume |
17 |
Issue |
3 |
Pages |
P03030 - 13pp |
| Keywords |
Particle tracking detectors (Solid-state detectors); Si microstrip and pad detectors; Solid state detectors |
| Abstract |
In this paper the results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivities ranging from 0.5 to 3 k Omega cm are presented. Samples were irradiated with reactor neutrons up to a fluence of 2.10(15) n(eq)/cm(2). The depletion depth was measured with Edge-TCT. The effective space charge concentration N-eff was estimated from the dependence of the depletion depth on bias voltage and studied as a function of neutron fluence. The dependence of N-eff on fluence changes with initial acceptor concentration in agreement with other measurements with p-type silicon. A long term accelerated annealing study of N-eff and detector current up to 1280 minutes at 60 degrees C was made. It was found that N-eff and current in reverse biased detector behave as expected for irradiated silicon. |
| Address |
[Mandic, I; Cindro, V; Debevc, J.; Gorisek, A.; Hiti, B.; Kramberger, G.; Skomina, P.; Zavrtanik, M.; Mikuz, M.] Jozef Stefan Inst, Jamova 39, Ljubljana, Slovenia, Email: igor.mandic@ijs.si |
| Corporate Author |
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Thesis |
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| Publisher |
IOP Publishing Ltd |
Place of Publication |
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Editor |
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| Language |
English |
Summary Language |
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Original Title |
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| Series Editor |
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Series Title |
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Abbreviated Series Title |
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| Series Volume |
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Series Issue |
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Edition |
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| ISSN |
1748-0221 |
ISBN |
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Medium |
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| Area |
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Expedition |
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Conference |
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| Notes |
WOS:000784713600004 |
Approved |
no |
| Is ISI |
yes |
International Collaboration |
yes |
| Call Number |
IFIC @ pastor @ |
Serial |
5208 |
| Permanent link to this record |
