| Records |
Author  |
DEPFET collaboration (Alonso, O. et al); Boronat, M.; Esperante-Pereira, D.; Fuster, J.; Garcia, I.G.; Lacasta, C.; Oyanguren, A.; Ruiz, P.; Timon, G.; Vos, M. |
| Title |
DEPFET Active Pixel Detectors for a Future Linear e(+)e(-) Collider |
Type |
Journal Article |
| Year |
2013 |
Publication |
IEEE Transactions on Nuclear Science |
Abbreviated Journal |
IEEE Trans. Nucl. Sci. |
| Volume |
60 |
Issue |
2 |
Pages |
1457-1465 |
| Keywords |
Active pixel sensor; DEPFET; linear collider; vertex detector |
| Abstract |
The DEPFET collaboration develops highly granular, ultra-transparent active pixel detectors for high-performance vertex reconstruction at future collider experiments. The characterization of detector prototypes has proven that the key principle, the integration of a first amplification stage in a detector-grade sensor material, can provide a comfortable signal to noise ratio of over 40 for a sensor thickness of 50-75 μm. ASICs have been designed and produced to operate a DEPFET pixel detector with the required read-out speed. A complete detector concept is being developed, including solutions for mechanical support, cooling, and services. In this paper, the status of the DEPFET R & D project is reviewed in the light of the requirements of the vertex detector at a future linear e(+)e(-) collider. |
| Address |
[Alonso, O.; Casanova, R.; Dieguez, A.] Univ Barcelona, E-08028 Barcelona, Spain, Email: marcel.vos@ific.uv.es |
| Corporate Author |
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Thesis |
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| Publisher |
Ieee-Inst Electrical Electronics Engineers Inc |
Place of Publication |
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Editor |
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| Language |
English |
Summary Language |
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Original Title |
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| Series Editor |
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Series Title |
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Abbreviated Series Title |
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| Series Volume |
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Series Issue |
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Edition |
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| ISSN |
0018-9499 |
ISBN |
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Medium |
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| Area |
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Expedition |
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Conference |
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| Notes |
WOS:000320856800029 |
Approved |
no |
| Is ISI |
yes |
International Collaboration |
yes |
| Call Number |
IFIC @ pastor @ |
Serial |
1489 |
| Permanent link to this record |
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| Author |
Gonzalez-Iglesias, D.; Aksoy, A.; Esperante, D.; Gimeno, B.; Latina, A.; Boronat, M.; Blanch, C.; Fuster-Martinez, N.; Martinez-Reviriego, P.; Martin-Luna, P.; Fuster, J. |
| Title |
X-band RF photoinjector design for the CompactLight project |
Type |
Journal Article |
| Year |
2021 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
| Volume |
1014 |
Issue |
|
Pages |
165709 - 10pp |
| Keywords |
Photoinjector; X-band; Electron sources; Free electron laser; Beam generation |
| Abstract |
RF photoinjectors have been under development for several decades to provide the high-brightness electron beams required for X-ray Free Electron Lasers. This paper proposes a photoinjector design that meets the Horizon 2020 CompactLight design study requirements. It consists of a 5.6-cell, X-band (12 GHz) RF gun, an emittance-compensating solenoid and two X-band traveling-wave structures that accelerate the beam out of the space-charge-dominated regime. The RF gun is intended to operate with a cathode gradient of 200 MV/m, and the TW structures at a gradient of 65 MV/m. The shape of the gun cavity cells was optimized to reduce the peak electric surface field. An assessment of the gun RF breakdown likelihood is presented as is a multipacting analysis for the gun coaxial coupler. RF pulse heating on the gun inner surfaces is also evaluated and beam dynamics simulations of the 100 MeV photoinjector are summarized. |
| Address |
[Gonzalez-Iglesias, D.; Esperante, D.; Gimeno, B.; Boronat, M.; Blanch, C.; Fuster-Martinez, N.; Martinez-Reviriego, P.; Martin-Luna, P.; Fuster, J.] Univ Valencia Consejo Super Invest Cient, Inst Fis Corpuscular IFIC, Calle Catedrat Jose Beltran 2, Valencia 46980, Spain, Email: daniel.gonzalez-iglesias@uv.es |
| Corporate Author |
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Thesis |
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| Publisher |
Elsevier |
Place of Publication |
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Editor |
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| Language |
English |
Summary Language |
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Original Title |
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| Series Editor |
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Series Title |
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Abbreviated Series Title |
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| Series Volume |
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Series Issue |
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Edition |
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| ISSN |
0168-9002 |
ISBN |
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Medium |
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| Area |
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Expedition |
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Conference |
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| Notes |
WOS:000704382900005 |
Approved |
no |
| Is ISI |
yes |
International Collaboration |
yes |
| Call Number |
IFIC @ pastor @ |
Serial |
4983 |
| Permanent link to this record |
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| Author |
Gonzalez-Iglesias, D.; Esperante, D.; Gimeno, B.; Boronat, M.; Blanch, C.; Fuster-Martinez, N.; Martinez-Reviriego, P.; Martin-Luna, P.; Fuster, J. |
| Title |
Analytical RF Pulse Heating Analysis for High Gradient Accelerating Structures |
Type |
Journal Article |
| Year |
2021 |
Publication |
IEEE Transactions on Nuclear Science |
Abbreviated Journal |
IEEE Trans. Nucl. Sci. |
| Volume |
68 |
Issue |
2 |
Pages |
78-91 |
| Keywords |
RF accelerating structures; RF pulse heating; thermal analysis |
| Abstract |
The main aim of this work is to present a simple method, based on analytical expressions, for obtaining the temperature increase due to the Joule effect inside the metallic walls of an RF accelerating component. This technique relies on solving the 1-D heat-transfer equation for a thick wall, considering that the heat sources inside the wall are the ohmic losses produced by the RF electromagnetic fields penetrating the metal with finite electrical conductivity. Furthermore, it is discussed how the theoretical expressions of this method can be applied to obtain an approximation to the temperature increase in realistic 3-D RF accelerating structures, taking as an example the cavity of an RF electron photoinjector and a traveling wave linac cavity. These theoretical results have been benchmarked with numerical simulations carried out with commercial finite-element method (FEM) software, finding good agreement among them. Besides, the advantage of the analytical method with respect to the numerical simulations is evidenced. In particular, the model could be very useful during the design and optimization phase of RF accelerating structures, where many different combinations of parameters must be analyzed in order to obtain the proper working point of the device, allowing to save time and speed up the process. However, it must be mentioned that the method described in this article is intended to provide a quick approximation to the temperature increase in the device, which of course is not as accurate as the proper 3-D numerical simulations of the component. |
| Address |
[Gonzalez-Iglesias, D.; Esperante, D.; Gimeno, B.; Boronat, M.; Blanch, C.; Fuster-Martinez, N.; Martinez-Reviriego, P.; Martin-Luna, P.; Fuster, J.] UV, CSIC, Inst Fis Corpuscular IFIC, Valencia 46980, Spain, Email: daniel.gonzalez-iglesias@uv.es |
| Corporate Author |
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Thesis |
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| Publisher |
Ieee-Inst Electrical Electronics Engineers Inc |
Place of Publication |
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Editor |
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| Language |
English |
Summary Language |
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Original Title |
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| Series Editor |
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Series Title |
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Abbreviated Series Title |
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| Series Volume |
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Series Issue |
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Edition |
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| ISSN |
0018-9499 |
ISBN |
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Medium |
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| Area |
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Expedition |
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Conference |
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| Notes |
WOS:000619349900001 |
Approved |
no |
| Is ISI |
yes |
International Collaboration |
no |
| Call Number |
IFIC @ pastor @ |
Serial |
4720 |
| Permanent link to this record |
