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Author  |
Hiti, B.; Cindro, V.; Gorisek, A.; Franks, M.; Marco-Hernandez, R.; Kramberger, G.; Mandic, I.; Mikuz, M.; Powell, S.; Steininger, H.; Vilella, E.; Zavrtanik, M.; Zhang, C. |
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Title |
Characterisation of analogue front end and time walk in CMOS active pixel sensor |
Type |
Journal Article |
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Year |
2021 |
Publication |
Journal of Instrumentation |
Abbreviated Journal |
J. Instrum. |
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Volume |
16 |
Issue |
12 |
Pages |
P12020 - 12pp |
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Keywords |
Charge induction; Radiation-hard detectors; Solid state detectors |
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Abstract |
In this work we investigated a method to determine time walk in an active silicon pixel sensor prototype using Edge-TCT with infrared laser charge injection. Samples were investigated before and after neutron irradiation to 5 . 10(14) n(eq)/cm(2). Threshold, noise and calibration of the analogue front end were determined with external charge injection. A spatially sensitive measurement of collected charge and time walk was carried out with Edge-TCT, showing a uniform charge collection and output delay in pixel centre. On pixel edges charge sharing was observed due to finite beam width resulting in smaller signals and larger output delay. Time walk below 25 ns was observed for charge above 2000 e(-) at a threshold above the noise level. Time walk measurement with external charge injection yielded identical results. |
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Address |
[Hiti, B.; Cindro, V.; Gorisek, A.; Kramberger, G.; Mandic, I.; Mikuz, M.; Zavrtanik, M.] Jozef Stefan Inst, Jamova Cesta 39, Ljubljana, Slovenia, Email: bojan.hiti@ijs.si |
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Publisher |
IOP Publishing Ltd |
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English |
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Abbreviated Series Title |
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Series Volume |
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ISSN |
1748-0221 |
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Conference |
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Notes |
WOS:000758055400055 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
5138 |
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Author |
Mandic, I.; Cindro, V.; Debevc, J.; Gorisek, A.; Hiti, B.; Kramberger, G.; Skomina, P.; Zavrtanik, M.; Mikuz, M.; Vilella, E.; Zhang, C.; Powell, S.; Franks, M.; Marco-Hernandez, R.; Steininger, H. |
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Title |
Study of neutron irradiation effects in Depleted CMOS detector structures |
Type |
Journal Article |
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Year |
2022 |
Publication |
Journal of Instrumentation |
Abbreviated Journal |
J. Instrum. |
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Volume |
17 |
Issue |
3 |
Pages |
P03030 - 13pp |
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Keywords |
Particle tracking detectors (Solid-state detectors); Si microstrip and pad detectors; Solid state detectors |
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Abstract |
In this paper the results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivities ranging from 0.5 to 3 k Omega cm are presented. Samples were irradiated with reactor neutrons up to a fluence of 2.10(15) n(eq)/cm(2). The depletion depth was measured with Edge-TCT. The effective space charge concentration N-eff was estimated from the dependence of the depletion depth on bias voltage and studied as a function of neutron fluence. The dependence of N-eff on fluence changes with initial acceptor concentration in agreement with other measurements with p-type silicon. A long term accelerated annealing study of N-eff and detector current up to 1280 minutes at 60 degrees C was made. It was found that N-eff and current in reverse biased detector behave as expected for irradiated silicon. |
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Address |
[Mandic, I; Cindro, V; Debevc, J.; Gorisek, A.; Hiti, B.; Kramberger, G.; Skomina, P.; Zavrtanik, M.; Mikuz, M.] Jozef Stefan Inst, Jamova 39, Ljubljana, Slovenia, Email: igor.mandic@ijs.si |
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Corporate Author |
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Thesis |
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Publisher |
IOP Publishing Ltd |
Place of Publication |
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Editor |
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Language |
English |
Summary Language |
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Original Title |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1748-0221 |
ISBN |
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Area |
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Expedition |
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Conference |
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Notes |
WOS:000784713600004 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
5208 |
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Author |
Vilella, E.; Alonso, O.; Trenado, J.; Vila, A.; Casanova, R.; Vos, M.; Garrido, L.; Dieguez, A. |
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Title |
A test beam setup for the characterization of the Geiger-mode avalanche photodiode technology for particle tracking |
Type |
Journal Article |
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Year |
2012 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
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Volume |
694 |
Issue |
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Pages |
199-204 |
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Keywords |
The Geiger-mode avalanche photodiode (GAPD); CMOS; EUDET/AIDA telescope; Schottky detector; Test beam; Trigger logic unit (TLU) |
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Abstract |
It is well known that avalanche photodiodes operated in the Geiger mode above the breakdown voltage offer a virtually infinite gain and time accuracy in the picosecond range that can be used for single photon detection. However, their performance in particle detection still remains unexplored. In this contribution, we are going to expose different steps that we have taken in order to prove the efficiency of the Geiger mode avalanche photodiodes in the aforementioned field. In particular, we will present a setup for the characterization of these sensors in a test beam. The expected results of the test beam at DESY and CERN have been simulated with Geant4 and will also be exposed. |
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Address |
[Vilella, E.; Alonso, O.; Vila, A.; Casanova, R.; Dieguez, A.] Univ Barcelona, Dept Elect, E-08028 Barcelona, Spain, Email: evilella@el.ub.es |
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Corporate Author |
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Thesis |
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Publisher |
Elsevier Science Bv |
Place of Publication |
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Editor |
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Language |
English |
Summary Language |
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Original Title |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0168-9002 |
ISBN |
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Conference |
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Notes |
WOS:000311020500029 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
1256 |
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| Permanent link to this record |
