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Author (up) Hiti, B.; Cindro, V.; Gorisek, A.; Franks, M.; Marco-Hernandez, R.; Kramberger, G.; Mandic, I.; Mikuz, M.; Powell, S.; Steininger, H.; Vilella, E.; Zavrtanik, M.; Zhang, C.
Title Characterisation of analogue front end and time walk in CMOS active pixel sensor Type Journal Article
Year 2021 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 16 Issue 12 Pages P12020 - 12pp
Keywords Charge induction; Radiation-hard detectors; Solid state detectors
Abstract In this work we investigated a method to determine time walk in an active silicon pixel sensor prototype using Edge-TCT with infrared laser charge injection. Samples were investigated before and after neutron irradiation to 5 . 10(14) n(eq)/cm(2). Threshold, noise and calibration of the analogue front end were determined with external charge injection. A spatially sensitive measurement of collected charge and time walk was carried out with Edge-TCT, showing a uniform charge collection and output delay in pixel centre. On pixel edges charge sharing was observed due to finite beam width resulting in smaller signals and larger output delay. Time walk below 25 ns was observed for charge above 2000 e(-) at a threshold above the noise level. Time walk measurement with external charge injection yielded identical results.
Address [Hiti, B.; Cindro, V.; Gorisek, A.; Kramberger, G.; Mandic, I.; Mikuz, M.; Zavrtanik, M.] Jozef Stefan Inst, Jamova Cesta 39, Ljubljana, Slovenia, Email: bojan.hiti@ijs.si
Corporate Author Thesis
Publisher IOP Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000758055400055 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 5138
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Author (up) Mandic, I.; Cindro, V.; Debevc, J.; Gorisek, A.; Hiti, B.; Kramberger, G.; Skomina, P.; Zavrtanik, M.; Mikuz, M.; Vilella, E.; Zhang, C.; Powell, S.; Franks, M.; Marco-Hernandez, R.; Steininger, H.
Title Study of neutron irradiation effects in Depleted CMOS detector structures Type Journal Article
Year 2022 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 17 Issue 3 Pages P03030 - 13pp
Keywords Particle tracking detectors (Solid-state detectors); Si microstrip and pad detectors; Solid state detectors
Abstract In this paper the results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivities ranging from 0.5 to 3 k Omega cm are presented. Samples were irradiated with reactor neutrons up to a fluence of 2.10(15) n(eq)/cm(2). The depletion depth was measured with Edge-TCT. The effective space charge concentration N-eff was estimated from the dependence of the depletion depth on bias voltage and studied as a function of neutron fluence. The dependence of N-eff on fluence changes with initial acceptor concentration in agreement with other measurements with p-type silicon. A long term accelerated annealing study of N-eff and detector current up to 1280 minutes at 60 degrees C was made. It was found that N-eff and current in reverse biased detector behave as expected for irradiated silicon.
Address [Mandic, I; Cindro, V; Debevc, J.; Gorisek, A.; Hiti, B.; Kramberger, G.; Skomina, P.; Zavrtanik, M.; Mikuz, M.] Jozef Stefan Inst, Jamova 39, Ljubljana, Slovenia, Email: igor.mandic@ijs.si
Corporate Author Thesis
Publisher IOP Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000784713600004 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 5208
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Author (up) Vilella, E.; Alonso, O.; Trenado, J.; Vila, A.; Casanova, R.; Vos, M.; Garrido, L.; Dieguez, A.
Title A test beam setup for the characterization of the Geiger-mode avalanche photodiode technology for particle tracking Type Journal Article
Year 2012 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 694 Issue Pages 199-204
Keywords The Geiger-mode avalanche photodiode (GAPD); CMOS; EUDET/AIDA telescope; Schottky detector; Test beam; Trigger logic unit (TLU)
Abstract It is well known that avalanche photodiodes operated in the Geiger mode above the breakdown voltage offer a virtually infinite gain and time accuracy in the picosecond range that can be used for single photon detection. However, their performance in particle detection still remains unexplored. In this contribution, we are going to expose different steps that we have taken in order to prove the efficiency of the Geiger mode avalanche photodiodes in the aforementioned field. In particular, we will present a setup for the characterization of these sensors in a test beam. The expected results of the test beam at DESY and CERN have been simulated with Geant4 and will also be exposed.
Address [Vilella, E.; Alonso, O.; Vila, A.; Casanova, R.; Dieguez, A.] Univ Barcelona, Dept Elect, E-08028 Barcelona, Spain, Email: evilella@el.ub.es
Corporate Author Thesis
Publisher Elsevier Science Bv Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:000311020500029 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 1256
Permanent link to this record