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Author ATLAS Collaboration (Aad, G. et al); Cabrera Urban, S.; Castillo Gimenez, V.; Costa, M.J.; Ferrer, A.; Fiorini, L.; Fuster, J.; Garcia, C.; Garcia Navarro, J.E.; Gonzalez de la Hoz, S.; Hernandez Jimenez, Y.; Higon-Rodriguez, E.; Irles Quiles, A.; Kaci, M.; King, M.; Lacasta, C.; Lacuesta, V.R.; March, L.; Marti-Garcia, S.; Mitsou, V.A.; Moles-Valls, R.; Oliver Garcia, E.; Pedraza Lopez, S.; Perez Garcia-Estañ, M.T.; Romero Adam, E.; Ros, E.; Salt, J.; Sanchez Martinez, V.; Soldevila, U.; Sanchez, J.; Torro Pastor, E.; Valero, A.; Valladolid Gallego, E.; Valls Ferrer, J.A.; Vos, M.
Title A neural network clustering algorithm for the ATLAS silicon pixel detector Type Journal Article
Year 2014 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 9 Issue Pages P09009 - 34pp
Keywords Particle tracking detectors; Particle tracking detectors (Solid-state detectors)
Abstract (up) A novel technique to identify and split clusters created by multiple charged particles in the ATLAS pixel detector using a set of artificial neural networks is presented. Such merged clusters are a common feature of tracks originating from highly energetic objects, such as jets. Neural networks are trained using Monte Carlo samples produced with a detailed detector simulation. This technique replaces the former clustering approach based on a connected component analysis and charge interpolation. The performance of the neural network splitting technique is quantified using data from proton-proton collisions at the LHC collected by the ATLAS detector in 2011 and from Monte Carlo simulations. This technique reduces the number of clusters shared between tracks in highly energetic jets by up to a factor of three. It also provides more precise position and error estimates of the clusters in both the transverse and longitudinal impact parameter resolution.
Address [Jackson, P.; Soni, N.; White, M. J.] Univ Adelaide, Dept Phys, Adelaide, SA, Australia
Corporate Author Thesis
Publisher Iop Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000343281300046 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 1972
Permanent link to this record
 
 
Author Esperante-Pereira, D.
Title DEPFET active pixel sensors for the vertex detector of the Belle-II experiment Type Journal Article
Year 2014 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 9 Issue Pages C03004 - 11pp
Keywords Particle tracking detectors; Solid state detectors; Particle tracking detectors (Solid-state detectors)
Abstract (up) Active pixels sensors based on the DEPFET technology will be used for the innermost vertex detector of the future Belle-II experiment. The increased luminosity of the e(+) e(-) SuperKEKB collider entails challenging detector requirements, namely: low material budget, low power consumption, high precision and efficiency, and a large readout rate. The DEPFET active pixel technology has shown to be a suitable solution for this purpose. A review of the different aspects of the detector design (sensors, readout ASICS and supplementary infrastructure) and the results of the latest thinned sensor prototypes (50 μm) are described.
Address Univ Valencia, CSIC, IFIC Inst Fis Corpuscular, Valencia 46980, Spain, Email: daniel.esperante@csic.es
Corporate Author Thesis
Publisher Iop Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000336123200004 Approved no
Is ISI yes International Collaboration no
Call Number IFIC @ pastor @ Serial 1803
Permanent link to this record
 
 
Author NEXT Collaboration (Monrabal, F. et al); Laing, A.; Alvarez, V.; Benlloch-Rodriguez, J.M.; Carcel, S.; Carrion, J.V.; Felkai, R.; Martinez, A.; Musti, M.; Querol, M.; Rodriguez, J.; Simon, A.; Torrent, J.; Botas, A.; Diaz, J.; Kekic, M.; Lopez-March, N.; Martinez-Lema, G.; Muñoz Vidal, J.; Nebot-Guinot, M.; Novella, P.; Palmeiro, B.; Perez, J.; Renner, J.; Romo-Luque, C.; Sorel, M.; Yahlali, N.
Title The NEXT White (NEW) detector Type Journal Article
Year 2018 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 13 Issue Pages P12010 - 38pp
Keywords Double-beta decay detectors; Particle tracking detectors; Scintillators; scintillation and light emission processes (solid gas and liquid scintillators); Time projection chambers
Abstract (up) Conceived to host 5 kg of xenon at a pressure of 15 bar in the fiducial volume, the NEXT-White apparatus is currently the largest high pressure xenon gas TPC using electroluminescent amplification in the world. It is also a 1:2 scale model of the NEXT-100 detector for Xe-136 beta beta 0 nu decay searches, scheduled to start operations in 2019. Both detectors measure the energy of the event using a plane of photomultipliers located behind a transparent cathode. They can also reconstruct the trajectories of charged tracks in the dense gas of the TPC with the help of a plane of silicon photomultipliers located behind the anode. A sophisticated gas system, common to both detectors, allows the high gas purity needed to guarantee a long electron lifetime. NEXT-White has been operating since October 2016 at the Laboratorio Subterraneo de Canfranc (LSC), in Spain. This paper describes the detector and associated infrastructures, as well as the main aspects of its initial operation.
Address [Ouero, M.; Hauptman, J.] Iowa State Univ, Dept Phys & Astron, 12 Phys Hall, Ames, IA 50011 USA, Email: monrabal18@gmail.com
Corporate Author Thesis
Publisher Iop Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000452463500001 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 3833
Permanent link to this record
 
 
Author Barrio, J.; Etxebeste, A.; Lacasta, C.; Muñoz, E.; Oliver, J.F.; Solaz, C.; Llosa, G.
Title Performance of VATA64HDR16 ASIC for medical physics applications based on continuous crystals and SiPMs Type Journal Article
Year 2015 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 10 Issue Pages P12001 - 12pp
Keywords Solid state detectors; Photon detectors for UV, visible and IR photons (solid-state) (PIN diodes, APDs, Si-PMTs, G-APDs, CCDs, EBCCDs, EMCCDs etc); Front-end electronics for detector readout; Gamma detectors (scintillators, CZT, HPG, HgI etc)
Abstract (up) Detectors based on Silicon Photomultipliers (SiPMs) coupled to continuous crystals are being tested in medical physics applications due to their potential high resolution and sensitivity. To cope with the high granularity required for a very good spatial resolution, SiPM matrices with a large amount of elements are needed. To be able to read the information coming from each individual channel, dedicated ASICs are employed. The VATA64HDR16 ASIC is a 64-channel, charge-sensitive amplifier that converts the collected charge into a proportional current or voltage signal. A complete assessment of the suitability of that ASIC for medical physics applications based on continuous crystals and SiPMs has been carried out. The input charge range is linear from 20 pC up to 55 pC. The energy resolution obtained at 511 keV is 10% FWHM with a LaBr3 crystal and 16% FWHM with a LYSO crystal. A coincidence timing resolution of 24 ns FWHM is obtained with two LYSO crystals.
Address [Barrio, J.; Etxebeste, A.; Lacasta, C.; Munoz, E.; Oliver, J. F.; Solaz, C.; Llosa, G.] Univ Valencia, CSIC, Inst Fis Corpuscular, Parque Cient,C Catedrat Jose Beltran 2, E-46980 Paterna, Spain, Email: John.Barrio@ific.uv.es
Corporate Author Thesis
Publisher Iop Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000369998500034 Approved no
Is ISI yes International Collaboration no
Call Number IFIC @ pastor @ Serial 2548
Permanent link to this record
 
 
Author Kuehn, S. et al; Bernabeu, J.; Lacasta, C.; Marco-Hernandez, R.; Santoyo, D.; Solaz, C.; Soldevila, U.
Title Prototyping of hybrids and modules for the forward silicon strip tracking detector for the ATLAS Phase-II upgrade Type Journal Article
Year 2017 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 12 Issue Pages P05015 - 26pp
Keywords Si microstrip and pad detectors; Particle tracking detectors (Solid-state detectors); Solid state detectors
Abstract (up) For the High-Luminosity upgrade of the Large Hadron Collider an increased instantaneous luminosity of up to 7.5 . 10(34) cm(-2) s(-1), leading to a total integrated luminosity of up to 3000 fb(-1), is foreseen. The current silicon and transition radiation tracking detectors of the ATLAS experiment will be unable to cope with the increased track densities and radiation levels, and will need to be replaced. The new tracking detector will consist entirely of silicon pixel and strip detectors. In this paper, results on the development and tests of prototype components for the new silicon strip detector in the forward regions (end-caps) of the ATLAS detector are presented. Flex-printed readout boards with fast readout chips, referred to as hybrids, and silicon detector modules are investigated. The modules consist of a hybrid glued onto a silicon strip sensor. The channels on both are connected via wire-bonds for readout and powering. Measurements of important performance parameters and a comparison of two possible readout schemes are presented. In addition, the assembly procedure is described and recommendations for further prototyping are derived.
Address [Kuehn, S.] CERN, European Org Nucl Res, Expt Phys, Route Meyrin 385, CH-1211 Geneva 23, Switzerland, Email: susanne.kuehn@cern.ch
Corporate Author Thesis
Publisher Iop Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000405076000015 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 3221
Permanent link to this record
 
 
Author Poley, L.; Blue, A.; Bloch, I.; Buttar, C.; Fadeyev, V.; Fernandez-Tejero, J.; Fleta, C.; Hacker, J.; Lacasta, C.; Miñano, M.; Renzmann, M.; Rossi, E.; Sawyer, C.; Sperlich, D.; Stegler, M.; Ullan, M.; Unno, Y.
Title Mapping the depleted area of silicon diodes using a micro-focused X-ray beam Type Journal Article
Year 2019 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 14 Issue Pages P03024 - 14pp
Keywords Si microstrip and pad detectors; Detector design and construction technologies and materials; Particle tracking detectors (Solid-state detectors); Radiation-hard detectors
Abstract (up) For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker (ITk). The ITk will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of 500V to maintain a low noise and power dissipation. In order to minimise sensor leakage currents, particularly in the high-radiation environment inside the ATLAS detector, sensors are foreseen to be operated at low temperatures and to be manufactured from wafers with a high bulk resistivity of several k Omega.cm. Simulations showed the electric field inside sensors with high bulk resistivity to extend towards the sensor edge, which could lead to increased surface currents for narrow dicing edges. In order to map the electric field inside biased silicon sensors with high bulk resistivity, three diodes from ATLAS silicon strip sensor prototype wafers were studied with a monochromatic, micro-focused X-ray beam at the Diamond Light Source (Didcot, U.K.). For all devices under investigation, the electric field inside the diode was mapped and its dependence on the applied bias voltage was studied.
Address [Poley, L.] Lawrence Berkeley Natl Lab, Cyclotron Rd, Berkeley, CA 94720 USA, Email: Anne-Luise.Poley@desy.de
Corporate Author Thesis
Publisher Iop Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000463330900012 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 3973
Permanent link to this record
 
 
Author Muñoz, E.; Barrio, J.; Bemmerer, D.; Etxebeste, A.; Fiedler, F.; Hueso-Gonzalez, F.; Lacasta, C.; Oliver, J.F.; Romer, K.; Solaz, C.; Wagner, L.; Llosa, G.
Title Tests of MACACO Compton telescope with 4.44 MeV gamma rays Type Journal Article
Year 2018 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 13 Issue Pages P05007 - 13pp
Keywords Compton imaging; Instrumentation for hadron therapy; Gamma detectors (scintillators, CZT, HPG, HgI etc); Photon detectors for UV, visible and IR photons (solid state) (PIN diodes, APDs, Si PMTs, G APDs, CCDs, EBCCDs, EMCCDs etc)
Abstract (up) Hadron therapy offers the possibility of delivering a large amount of radiation dose to tumors with minimal absorption by the surrounding healthy tissue. In order to fully exploit the advantages of this technique, the use of real-time beam monitoring devices becomes mandatory. Compton imaging devices can be employed to map the distribution of prompt gamma emission during the treatment and thus assess its correct delivery. The Compton telescope prototype developed at IFIC-Valencia for this purpose is made of three layers of LaBr3 crystals coupled to silicon photomultipliers. The system has been tested in a 4.44 MeV gamma field at the 3 MV Tandetron accelerator at HZDR, Dresden. Images of the target with the system in three different positions separated by 10 mm were successfully reconstructed. This indicates the ability of MACACO for imaging the prompt gamma rays emitted at such energies.
Address [Munoz, E.; Barrio, J.; Etxebeste, A.; Lacasta, C.; Oliver, J. F.; Solaz, C.; Llosa, G.] Univ Valencia, CSIC, Inst Fis Corpuscular, Parque Cient,C Catedrat Jose Beltran 2, E-46980 Paterna, Valencia, Spain, Email: Enrique.Munoz@ific.uv.es
Corporate Author Thesis
Publisher Iop Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000431716900001 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 3575
Permanent link to this record
 
 
Author NEXT Collaboration (Rogers, L. et al); Alvarez, V.; Benlloch-Rodriguez, J.M.; Botas, A.; Carcel, S.; Carrion, J.V.; Diaz, J.; Felkai, R.; Ferrario, P.; Gomez-Cadenas, J.J.; Kekic, M.; Laing, A.; Lopez-March, N.; Martinez, A.; Martinez-Lema, G.; Muñoz Vidal, J.; Musti, M.; Nebot-Guinot, M.; Novella, P.; Palmeiro, B.; Perez, J.; Querol, M.; Renner, J.; Rodriguez, J.; Romo-Luque, C; Simon, A.; Sorel, M.; Torrent, J.; Yahlali, N.
Title High voltage insulation and gas absorption of polymers in high pressure argon and xenon gases Type Journal Article
Year 2018 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 13 Issue Pages P10002 - 19pp
Keywords Gaseous detectors; Scintillators, scintillation and light emission processes (solid, gas and liquid scintillators)
Abstract (up) High pressure gas time projection chambers (HPGTPCs) are made with a variety of materials, many of which still await proper characterization in high pressure noble gas environments. As HPGTPCs increase in size toward ton-scale detectors, assemblies become larger and more complex, creating a need for detailed understanding of how structural supports and high voltage insulators behave. This includes identification of materials with predictable mechanical properties and without surface charge accumulation that may lead to field deformation or sparking. This paper explores the mechanical and electrical effects of high pressure gas environments on insulating polymers PTFE, HDPE, PEEK, POM and UHMW in argon and xenon, including studying gas absorption, swelling and high voltage insulation strength.
Address [Hauptman, J.] Iowa State Univ, Dept Phys & Astron, 12 Phys Hall, Ames, IA 50011 USA, Email: leslie.rogers@mavs.uta.edu
Corporate Author Thesis
Publisher Iop Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000445999500002 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 3744
Permanent link to this record
 
 
Author Kuehn, S. et al; Bernabeu, J.; Lacasta, C.; Marco-Hernandez, R.; Rodriguez Rodriguez, D.; Santoyo, D.; Solaz, C.; Soldevila Serrano, U.
Title Prototyping of petalets for the Phase-II upgrade of the silicon strip tracking detector of the ATLAS experiment Type Journal Article
Year 2018 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 13 Issue Pages T03004 - 22pp
Keywords Particle tracking detectors (Solid-state detectors); Si microstrip and pad detectors; Solid state detectors; Performance of High Energy Physics Detectors
Abstract (up) In the high luminosity era of the Large Hadron Collider, the instantaneous luminosity is expected to reach unprecedented values, resulting in about 200 proton-proton interactions in a typical bunch crossing. To cope with the resultant increase in occupancy, bandwidth and radiation damage, the ATLAS Inner Detector will be replaced by an all-silicon system, the Inner Tracker (ITk). The ITk consists of a silicon pixel and a strip detector and exploits the concept of modularity. Prototyping and testing of various strip detector components has been carried out. This paper presents the developments and results obtained with reduced-size structures equivalent to those foreseen to be used in the forward region of the silicon strip detector. Referred to as petalets, these structures are built around a composite sandwich with embedded cooling pipes and electrical tapes for routing the signals and power. Detector modules built using electronic flex boards and silicon strip sensors are glued on both the front and back side surfaces of the carbon structure. Details are given on the assembly, testing and evaluation of several petalets. Measurement results of both mechanical and electrical quantities are shown. Moreover, an outlook is given for improved prototyping plans for large structures.
Address [Kuehn, S.] European Org Nucl Res, CERN, Geneva, Switzerland, Email: susanne.kuehn@cern.ch
Corporate Author Thesis
Publisher Iop Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000428146400003 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 3530
Permanent link to this record
 
 
Author Mandic, I.; Cindro, V.; Debevc, J.; Gorisek, A.; Hiti, B.; Kramberger, G.; Skomina, P.; Zavrtanik, M.; Mikuz, M.; Vilella, E.; Zhang, C.; Powell, S.; Franks, M.; Marco-Hernandez, R.; Steininger, H.
Title Study of neutron irradiation effects in Depleted CMOS detector structures Type Journal Article
Year 2022 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 17 Issue 3 Pages P03030 - 13pp
Keywords Particle tracking detectors (Solid-state detectors); Si microstrip and pad detectors; Solid state detectors
Abstract (up) In this paper the results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivities ranging from 0.5 to 3 k Omega cm are presented. Samples were irradiated with reactor neutrons up to a fluence of 2.10(15) n(eq)/cm(2). The depletion depth was measured with Edge-TCT. The effective space charge concentration N-eff was estimated from the dependence of the depletion depth on bias voltage and studied as a function of neutron fluence. The dependence of N-eff on fluence changes with initial acceptor concentration in agreement with other measurements with p-type silicon. A long term accelerated annealing study of N-eff and detector current up to 1280 minutes at 60 degrees C was made. It was found that N-eff and current in reverse biased detector behave as expected for irradiated silicon.
Address [Mandic, I; Cindro, V; Debevc, J.; Gorisek, A.; Hiti, B.; Kramberger, G.; Skomina, P.; Zavrtanik, M.; Mikuz, M.] Jozef Stefan Inst, Jamova 39, Ljubljana, Slovenia, Email: igor.mandic@ijs.si
Corporate Author Thesis
Publisher IOP Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000784713600004 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 5208
Permanent link to this record