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Affolder, A. et al, Garcia, C., Lacasta, C., Marco, R., Marti-Garcia, S., Miñano, M., et al. (2011). Silicon detectors for the sLHC. Nucl. Instrum. Methods Phys. Res. A, 658(1), 11–16.
Abstract: In current particle physics experiments, silicon strip detectors are widely used as part of the inner tracking layers. A foreseeable large-scale application for such detectors consists of the luminosity upgrade of the Large Hadron Collider (LHC), the super-LHC or sLHC, where silicon detectors with extreme radiation hardness are required. The mission statement of the CERN RD50 Collaboration is the development of radiation-hard semiconductor devices for very high luminosity colliders. As a consequence, the aim of the R&D programme presented in this article is to develop silicon particle detectors able to operate at sLHC conditions. Research has progressed in different areas, such as defect characterisation, defect engineering and full detector systems. Recent results from these areas will be presented. This includes in particular an improved understanding of the macroscopic changes of the effective doping concentration based on identification of the individual microscopic defects, results from irradiation with a mix of different particle types as expected for the sLHC, and the observation of charge multiplication effects in heavily irradiated detectors at very high bias voltages.
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ATLAS Collaboration(Aad, G. et al), Amos, K. R., Aparisi Pozo, J. A., Bailey, A. J., Cabrera Urban, S., Cardillo, F., et al. (2022). Operation and performance of the ATLAS semiconductor tracker in LHC Run 2. J. Instrum., 17(1), P01013–56pp.
Abstract: The semiconductor tracker (SCT) is one of the tracking systems for charged particles in the ATLAS detector. It consists of 4088 silicon strip sensor modules. During Run 2 (2015-2018) the Large Hadron Collider delivered an integrated luminosity of 156 fb(-1) to the ATLAS experiment at a centre-of-mass proton-proton collision energy of 13 TeV. The instantaneous luminosity and pile-up conditions were far in excess of those assumed in the original design of the SCT detector. Due to improvements to the data acquisition system, the SCT operated stably throughout Run 2. It was available for 99.9% of the integrated luminosity and achieved a data-quality efficiency of 99.85%. Detailed studies have been made of the leakage current in SCT modules and the evolution of the full depletion voltage, which are used to study the impact of radiation damage to the modules. '
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ATLAS Collaboration(Aad, G. et al), Aparisi Pozo, J. A., Bailey, A. J., Cabrera Urban, S., Cardillo, F., Castillo, F. L., et al. (2021). Measurements of sensor radiation damage in the ATLAS inner detector using leakage currents. J. Instrum., 16(8), P08025–46pp.
Abstract: Non-ionizing energy loss causes bulk damage to the silicon sensors of the ATLAS pixel and strip detectors. This damage has important implications for data-taking operations, charged-particle track reconstruction, detector simulations, and physics analysis. This paper presents simulations and measurements of the leakage current in the ATLAS pixel detector and semiconductor tracker as a function of location in the detector and time, using data collected in Run 1 (2010-2012) and Run 2 (2015-2018) of the Large Hadron Collider. The extracted fluence shows a much stronger vertical bar z vertical bar-dependence in the innermost layers than is seen in simulation. Furthermore, the overall fluence on the second innermost layer is significantly higher than in simulation, with better agreement in layers at higher radii. These measurements are important for validating the simulation models and can be used in part to justify safety factors for future detector designs and interventions.
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Hara, K. et al, Escobar, C., Garcia, C., Lacasta, C., Miñano, M., & Soldevila, U. (2020). Charge collection study with the ATLAS ITk prototype silicon strip sensors ATLAS17LS. Nucl. Instrum. Methods Phys. Res. A, 983, 164422–6pp.
Abstract: The inner tracker of the ATLAS detector is scheduled to be replaced by a completely new silicon-based inner tracker (ITk) for the Phase-II of the CERN LHC (HL-LHC). The silicon strip detector covers the volume 40 < R < 100 cm in the radial and vertical bar z vertical bar <300 cm in the longitudinal directions. The silicon sensors for the detector will be fabricated using the n(+)-on-p 6-inch wafer technology, for a total of 22,000 wafers. Intensive studies were carried out on the final prototype sensors ATLAS17LS fabricated by Hamamatsu Photonics (HPK). The charge collection properties were examined using penetrating Sr-90 beta-rays and the ALIBAVA fast readout system for the miniature sensors of 1 cm xl cm in area. The samples were irradiated by protons in the 27 MeV Birmingham Cyclotron, the 70 MeV CYRIC at Tohoku University, and the 24 GeV CERN-PS, and by neutrons at Ljubljana TAIGA reactor for fluence values up to 2 x 10(15) n(eq)/cm(2). The change in the charge collection with fluence was found to be similar to the previous prototype ATLAS12, and acceptable for the ITk. Sensors with two active thicknesses, 300 μm (standard) and 240 μm (thin), were compared and the difference in the charge collection was observed to be small for bias voltages up to 500 V. Some samples were also irradiated with gamma radiation up to 2 MGy, and the full depletion voltage was found to decrease with the dose. This was caused by the Compton electrons due to the( 60)Co gamma radiation. To summarize, the design of the ATLAS17LS and technology for its fabrication have been verified for implementation in the ITk. We are in the stage of sensor pre-production with the first sensors already delivered in January of 2020.
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Schreeck, H., Paschen, B., Wieduwilt, P., Ahlburg, P., Andricek, L., Dingfelder, J., et al. (2020). Effects of gamma irradiation on DEPFET pixel sensors for the Belle II experiment. Nucl. Instrum. Methods Phys. Res. A, 959, 163522–9pp.
Abstract: For the Belle II experiment at KEK (Tsukuba, Japan) the KEKB accelerator was upgraded to deliver a 40 times larger instantaneous luminosity than before, which requires an increased radiation hardness of the detector components. As the innermost part of the Belle II detector, the pixel detector (PXD), based on DEPFET (DEpleted P-channel Field Effect Transistor) technology, is most exposed to radiation from the accelerator. An irradiation campaign was performed to verify that the PXD can cope with the expected amount of radiation. We present the results of this measurement campaign in which an X-ray machine was used to irradiate a single PXD half-ladder to a total dose of 266 kGy. The half-ladder is from the same batch as the half-ladders used for Belle II. According to simulations, the total accumulated dose corresponds to 7-10 years of Belle II operation. While individual components have been irradiated before, this campaign is the first full system irradiation. We discuss the effects on the DEPFET sensors, as well as the performance of the front-end electronics. In addition, we present efficiency studies of the half-ladder from beam tests performed before and after the irradiation.
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