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Benitez, V. et al, Bernabeu, J., Garcia, C., Lacasta, C., Marco, R., Rodriguez, D., et al. (2016). Sensors for the End-cap prototype of the Inner Tracker in the ATLAS Detector Upgrade. Nucl. Instrum. Methods Phys. Res. A, 833, 226–232.
Abstract: The new silicon microstrip sensors of the End-cap part of the HL-LHC ATLAS Inner Tracker (ITk) present a number of challenges due to their complex design features such as the multiple different sensor shapes, the varying strip pitch, or the built-In stereo angle. In order to investigate these specific problems, the “petalet” prototype was defined as a small End-cap prototype. The sensors for the petalet prototype include several new layout and technological solutions to investigate the issues, they have been tested in detail by the collaboration. The sensor description and detailed test results are presented in this paper. New software tools have been developed for the automatic layout generation of the complex designs. The sensors have been fabricated, characterized and delivered to the institutes in the collaboration for their assembly on petalet prototypes. This paper describes the lessons learnt from the design and tests of the new solutions implemented on these sensors, which are being used for the full petal sensor development. This has resulted in the ITIc strip, community acquiring the necessary expertise to develop the full End-cap structure, the petal.
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Cervello, A., Carrio, F., Garcia, R., Martos, J., Soret, J., Torres, J., et al. (2022). The TileCal PreProcessor interface with the ATLAS global data acquisition system at the HL-LHC. Nucl. Instrum. Methods Phys. Res. A, 1043, 167492–2pp.
Abstract: The Large Hadron Collider (LHC) has envisaged a series of upgrades towards a High Luminosity LHC (HL-LHC) delivering five times the LHC nominal instantaneous luminosity. It will take place throughout 2026-2028, corresponding to the Long Shutdown 3. During this upgrade, the ATLAS Tile Hadronic Calorimeter (TileCal) will replace completely on-and off-detector electronics adopting a new read-out architecture. Signals captured from TileCal are digitized by the on-detector electronics and transmitted to the TileCal PreProcessor (TilePPr) located off-detector, which provides the interface with the ATLAS trigger and data acquisition systems.TilePPr receives, process and transmits the data from the on-detector system and transmits it to the Front -End Link eXchange (FELIX) system. FELIX is the ATLAS common hardware in all the subdetectors designed to act as a data router, receiving and forwarding data to the SoftWare Read-Out Driver (SWROD) computers. FELIX also distributes the Timing, Trigger and Control (TTC) signals to the TilePPr to be propagated to the on-detector electronics. The SWROD is an ATLAS common software solution to perform detector specific data processing, including configuration, calibration, control and monitoring of the partitionIn this contribution we will introduce the new read-out elements for TileCal at the HL-LHC, the intercon-nection between the off-detector electronics and the FELIX system, the configuration and implementation for the test beam campaigns, as well as future developments of the preprocessing and monitoring status of the calorimeter modules through the SWROD infrastructure.
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Fernandez-Tejero, J. et al, & Soldevila, U. (2020). Humidity sensitivity of large area silicon sensors: Study and implications. Nucl. Instrum. Methods Phys. Res. A, 978, 164406–6pp.
Abstract: The production of large area sensors is one of the main challenges that the ATLAS collaboration faces for the new Inner-Tracker full-silicon detector. During the prototype fabrication phase for the High Luminosity Large Hadron Collider upgrade, several ATLAS institutes observed indications of humidity sensitivity of large area sensors, even at relative humidities well below the dew point. Specifically, prototype Barrel and End-Cap silicon strip sensors fabricated in 6-inch wafers manifest a prompt decrease of the breakdown voltage when operating under high relative humidity, adversely affecting the performance of the sensors. In addition to the investigation of these prototype sensors, a specific fabrication batch with special passivation is also studied, allowing for a deeper understanding of the responsible mechanisms. This work presents an extensive study of this behaviour on large area sensors. The locations of the hotspots at the breakdown voltage at high humidity are revealed using different infrared thermography techniques. Several palliative treatments are attempted, proving the influence of sensor cleaning methods, as well as baking, on the device performance, but no improvement on the humidity sensitivity was achieved. Furthermore, a study of the incidence of the sensitivity in different batches is also presented, introducing a hypothesis of the origins of the humidity sensitivity associated to the sensor edge design, together with passivation thickness and conformity. Several actions to be taken during sensor production and assembly are extracted from this study, in order to minimize the impact of humidity sensitivity on the performance of large area silicon sensors for High Energy Physics experiments.
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Latonova, V. et al, Bernabeu, J., Lacasta, C., Solaz, C., & Soldevila, U. (2023). Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation. Nucl. Instrum. Methods Phys. Res. A, 1050, 168119–5pp.
Abstract: The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb(-1) means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 center dot 10(15) MeVn(eq)/cm(2) and 0.66MGy, respectively, including a safety factor of 1.5. Radiation hard n(+)-in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n(+) implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. We discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips.
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Ruhr, F. et al, Escobar, C., & Miñano, M. (2020). Testbeam studies of barrel and end-cap modules for the ATLAS ITk strip detector before and after irradiation. Nucl. Instrum. Methods Phys. Res. A, 979, 164430–6pp.
Abstract: In order to cope with the occupancy and radiation doses expected at the High-Luminosity LHC, the ATLAS experiment will replace its Inner Detector with an all-silicon Inner Tracker (ITk), consisting of pixel and strip subsystems. In the last two years, several prototype ITk strip modules have been tested using beams of high energy electrons produced at the DESY-II testbeam facility. Tracking was provided by EUDET telescopes. The modules tested are built from two sensor types: the rectangular ATLAS17LS, which will be used in the outer layers of the central barrel region of the detector, and the annular ATLAS12EC, which will be used in the innermost ring (R0) of the forward region. Additionally, a structure with two RO modules positioned back-to-back has been measured, demonstrating space point reconstruction using the stereo angle of the strips. Finally, one barrel and one RO module have been measured after irradiation to 40% beyond the expected end-of-lifetime fluence. The data obtained allow for thorough tests of the module performance, including charge collection, noise occupancy, detection efficiency, and tracking performance. The results give confidence that the ITk strip detector will meet the requirements of the ATLAS experiment.
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Ullan, M., Benitez, V., Quirion, D., Zabala, M., Pellegrini, G., Lozano, M., et al. (2014). Low-resistance strip sensors for beam-loss event protection. Nucl. Instrum. Methods Phys. Res. A, 765, 252–257.
Abstract: AC coupled silicon strip sensors can be damaged in case of a beam loss due to the possibility of a large charge accumulation in the bulk, developing very high voltages across the coupling capacitors which can destroy them. Punch-through structures are currently used to avoid this problem helping to evacuate the accumulated charge as large voltages are developing. Nevertheless, previous experiments, performed with laser pulses, have shown that these structures can become ineffective in relatively long strips. The large value of the implant resistance can effectively isolate the “far” end of the strip from the punchthrough structure leading to large voltages. We present here our developments to fabricate lowresistance strip sensors to avoid this problem. The deposition of a conducting material in contact with the implants drastically reduces the strip resistance, assuring the effectiveness of the punch-through structures. First devices have been fabricated with this new technology. Initial results with laser tests show the expected reduction in peak voltages on the low resistivity implants. Other aspects of the sensor performance, including the signal formation, are not affected by the new technology.
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Unno, Y. et al, Garcia, C., Jimenez, J., Lacasta, C., Marti-Garcia, S., & Soldevila, U. (2014). Development of n(+) -in-p large-area silicon microstrip sensors for very high radiation environments-ATLAS12 design and initial results. Nucl. Instrum. Methods Phys. Res. A, 765, 80–90.
Abstract: We have been developing a novel radiation tolerant n(+)-in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float zone wafers, where large area strip sensor designs are laid out together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 pm and slim edge space of 450 pm, a gated punch-through protection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers.
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