Abstract: The objective of this work is the evaluation of the risk of suffering a multipactor discharge in an S-band dielectric-assist accelerating (DAA) structure for a compact low-energy linear particle accelerator dedicated to hadrontherapy treatments. A DAA structure consists of ultra-low loss dielectric cylinders and disks with irises which are periodically arranged in a metallic enclosure, with the advantage of having an extremely high quality factor and very high shunt impedance at room temperature, and it is therefore proposed as a potential alternative to conventional disk-loaded copper structures. However, it has been observed that these structures suffer from multipactor discharges. In fact, multipactor is one of the main problems of these devices, as it limits the maximum accelerating gradient. Because of this, the analysis of multipactor risk in the early design steps of DAA cavities is crucial to ensure the correct performance of the device after fabrication. In this paper, we present a comprehensive and detailed study of multipactor in our DAA design through numerical simulations performed with an in-house developed code based on the Monte-Carlo method. The phenomenology of the multipactor (resonant electron trajectories, electron flight time between impacts, etc.) is described in detail for different values of the accelerating gradient. It has been found that in these structures an ultra-fast non-resonant multipactor appears, which is different from the types of multipactor theoretically studied in the scientific literature. In addition, the effect of several low electron emission coatings on the multipactor threshold is investigated. Furthermore, a novel design based on the modification of the DAA cell geometry for multipactor mitigation is introduced, which shows a significant increase in the accelerating gradient handling capabilities of our prototype.

Abstract: A low-noise head amplifier has been developed for the extra low energy antiproton ring beam trajectory, orbit, and intensity measurement system at CERN. This system is based on 24 double-electrode electrostatic beam position monitors installed around the ring. A head amplifier is placed close to each beam position monitor to amplify the electrode signals and generate a difference and a sum signal. These signals are sent to the digital acquisition system, about 50 m away from the ring, where they are digitized and further processed. The beam position can be measured by dividing the difference signal by the sum signal while the sum signal gives information relative to the beam intensity. The head amplifier consists of two discrete charge preamplifiers with junction field effect transistor (JFET) inputs, a sum and a difference stage, and two cable drivers. Special attention has been paid to the amplifier printed circuit board design to minimize the parasitic capacitances and inductances at the charge amplifier stages to meet the gain and noise requirements. The measurements carried out on the head amplifier showed a gain of 40.5 and 46.5 dB for the sum and difference outputs with a bandwidth from 200 Hz to 75 MHz and an input voltage noise density lower than 400 pV/v Hz. Twenty head amplifiers have been already installed in the ring and they have been used to detect the first beam signals during the first commissioning stage in November 2016.

Abstract: The planned HL-LHC (High Luminosity LHC) in 2025 is being designed to maximise the physics potential through a sizable increase in the luminosity up to 6.10(34) cm(-2) s(-1). A consequence of this increased luminosity is the expected radiation damage at 3000 fb(-1) after ten years of operation, requiring the tracking detectors to withstand fluences to over 1.10(16) 1 MeV n(eq)/cm(2) . In order to cope with the consequent increased readout rates, a complete re-design of the current ATLAS Inner Detector (ID) is being developed as the Inner Tracker (ITk). Two proposed detectors for the ATLAS strip tracker region of the ITk were characterized at the Diamond Light Source with a 3 μm FWHM 15 keV micro focused X-ray beam. The devices under test were a 320 μm thick silicon stereo (Barrel) ATLAS12 strip mini sensor wire bonded to a 130 nm CMOS binary readout chip (ABC130) and a 320 μm thick full size radial (end-cap) strip sensor – utilizing bi-metal readout layers – wire bonded to 250 nm CMOS binary readout chips (ABCN-25). A resolution better than the inter strip pitch of the 74.5 μm strips was achieved for both detectors. The effect of the p-stop diffusion layers between strips was investigated in detail for the wire bond pad regions. Inter strip charge collection measurements indicate that the effective width of the strip on the silicon sensors is determined by p-stop regions between the strips rather than the strip pitch.