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Unno, Y. et al, Garcia, C., Jimenez, J., Lacasta, C., Marti-Garcia, S., & Soldevila, U. (2014). Development of n(+) -in-p large-area silicon microstrip sensors for very high radiation environments-ATLAS12 design and initial results. Nucl. Instrum. Methods Phys. Res. A, 765, 80–90.
Abstract: We have been developing a novel radiation tolerant n(+)-in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float zone wafers, where large area strip sensor designs are laid out together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 pm and slim edge space of 450 pm, a gated punch-through protection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers.
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Ullan, M., Benitez, V., Quirion, D., Zabala, M., Pellegrini, G., Lozano, M., et al. (2014). Low-resistance strip sensors for beam-loss event protection. Nucl. Instrum. Methods Phys. Res. A, 765, 252–257.
Abstract: AC coupled silicon strip sensors can be damaged in case of a beam loss due to the possibility of a large charge accumulation in the bulk, developing very high voltages across the coupling capacitors which can destroy them. Punch-through structures are currently used to avoid this problem helping to evacuate the accumulated charge as large voltages are developing. Nevertheless, previous experiments, performed with laser pulses, have shown that these structures can become ineffective in relatively long strips. The large value of the implant resistance can effectively isolate the “far” end of the strip from the punchthrough structure leading to large voltages. We present here our developments to fabricate lowresistance strip sensors to avoid this problem. The deposition of a conducting material in contact with the implants drastically reduces the strip resistance, assuring the effectiveness of the punch-through structures. First devices have been fabricated with this new technology. Initial results with laser tests show the expected reduction in peak voltages on the low resistivity implants. Other aspects of the sensor performance, including the signal formation, are not affected by the new technology.
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Mengoni, D., Duenas, J. A., Assie, M., Boiano, C., John, P. R., Aliaga, R. J., et al. (2014). Digital pulse-shape analysis with a TRACE early silicon prototype. Nucl. Instrum. Methods Phys. Res. A, 764, 241–246.
Abstract: A highly segmented silicon-pad detector prototype has been tested to explore the performance of the digital pulse shape analysis in the discrimination of the particles reaching the silicon detector. For the first time a 200 tun thin silicon detector, grown using an ordinary floating zone technique, has been shown to exhibit a level discrimination thanks to the fine segmentation. Light-charged particles down to few MeV have been separated, including their punch-through. A coaxial HPGe detector in time coincidence has further confirmed the quality of the particle discrimination.
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n_TOF Collaboration(Zugec, P. et al), Domingo-Pardo, C., Giubrone, G., & Tain, J. L. (2014). GEANT4 simulation of the neutron background of the C6D6 set-up for capture studies at n_TOF. Nucl. Instrum. Methods Phys. Res. A, 760, 57–67.
Abstract: The neutron sensitivity of the Cr6D6 detector setup used at nTOF facility for capture measurements has been studied by means of detailed GEANT4 simulations. A realistic software replica of the entire nTOF experimental hall, including the neutron beam line, sample, detector supports and the walls of the experimental area has been implemented in the simulations. The simulations have been analyzed in the same manner as experimental data, in particular by applying the Pulse Height Weighting Technique. The simulations have been validated against a measurement of the neutron background performed with a(nat)-C sample, showing an excellent agreement above 1 keV. At lower energies, an additional component in the measured C-nat yield has been discovered, which prevents the use of C-nat data for neutron background estimates at neutron energies below a few hundred eV. The origin and time structure of the neutron background have been derived from the simulations. Examples of the neutron background for two different samples are demonstrating the important role of accurate simulations of the neutron background in capture cross-section measurements.
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Goasduff, A., Valiente-Dobon, J. J., Lunardi, S., Haas, F., Gadea, A., de Angelis, G., et al. (2014). Counting rate measurements for lifetime experiments using the RDDS method with the new generation gamma-ray array AGATA. Nucl. Instrum. Methods Phys. Res. A, 758, 1–3.
Abstract: The differential Recoil Distance Doppler Shift (RDDS) method after multinucleon transfer (MNT) reactions to measure lifetimes of excited states in neutron-rich nuclei requires the use of a thick energy degrader for the recoiling ejectiles that are then detected in a spectrometer. This type of measurements greatly benefits from the use of the new generation segmented gamma-ray detectors, such as the AGATA demonstrator which offers unprecedented energy and angular resolutions. In order to make an optimized choice of the material and the thickness of the degrader for lifetime measurements using the RODS method after MNT, an experiment has been performed with the AGATA demonstrator. Counting rate measurements for different degraders are presented.
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