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Author (up) Affolder, A. et al; Garcia, C.; Lacasta, C.; Marco, R.; Marti-Garcia, S.; Miñano, M.; Soldevila, U. doi  openurl
  Title Silicon detectors for the sLHC Type Journal Article
  Year 2011 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 658 Issue 1 Pages 11-16  
  Keywords Silicon particle detectors; Radiation damage; Irradiation; Charge collection efficiency  
  Abstract In current particle physics experiments, silicon strip detectors are widely used as part of the inner tracking layers. A foreseeable large-scale application for such detectors consists of the luminosity upgrade of the Large Hadron Collider (LHC), the super-LHC or sLHC, where silicon detectors with extreme radiation hardness are required. The mission statement of the CERN RD50 Collaboration is the development of radiation-hard semiconductor devices for very high luminosity colliders. As a consequence, the aim of the R&D programme presented in this article is to develop silicon particle detectors able to operate at sLHC conditions. Research has progressed in different areas, such as defect characterisation, defect engineering and full detector systems. Recent results from these areas will be presented. This includes in particular an improved understanding of the macroscopic changes of the effective doping concentration based on identification of the individual microscopic defects, results from irradiation with a mix of different particle types as expected for the sLHC, and the observation of charge multiplication effects in heavily irradiated detectors at very high bias voltages.  
  Address [Barber, T.; Breindl, M.; Driewer, A.; Koehler, M.; Kuehn, S.; Parzefall, U.; Preiss, J.; Walz, M.; Wiik, L.] Univ Freiburg, Inst Phys, D-79104 Freiburg, Germany, Email: Ulrich.Parzefall@physik.uni-freiburg.de  
  Corporate Author Thesis  
  Publisher Elsevier Science Bv Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000297783300004 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 836  
Permanent link to this record
 

 
Author (up) ATLAS Collaboration (Aad, G. et al); Amos, K.R.; Aparisi Pozo, J.A.; Bailey, A.J.; Cabrera Urban, S.; Cardillo, F.; Castillo Gimenez, V.; Costa, M.J.; Didenko,, M.; Escobar, C.; Estrada Pastor, O.; Fiorini, L.; Fullana Torregrosa, E.; Fuster, J.; Garcia, C.; Garcia Navarro, J.E.; Gonzalez de la Hoz, S.; Gonzalvo Rodriguez, G.R.; Guerrero Rojas, J.G.R.; Higon-Rodriguez, E.; Lacasta, C.; Lozano Bahilo, J.J.; Mamuzic, J.; Marti-Garcia, S.; Martinez Agullo, P.; Miralles Lopez, M.; Mitsou, V.A.; Monsonis Romero, L.; Moreno Llacer, M.; Navarro-Gonzalez, J.; Poveda, J.; Prades Ibañez, A.; Ruiz-Martinez, A.; Sabatini, P.; Salt, J.; Sanchez Sebastian, V.; Sayago Galvan, I.; Soldevila, U.; Sanchez, J.; Torro Pastor, E.; Valero, A.; Valls Ferrer, J.A.; Villaplana Perez, M.; Vos, M. url  doi
openurl 
  Title Operation and performance of the ATLAS semiconductor tracker in LHC Run 2 Type Journal Article
  Year 2022 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.  
  Volume 17 Issue 1 Pages P01013 - 56pp  
  Keywords Charge transport and multiplication in solid media; Particle tracking detectors (Solid-state detectors); Radiation damage to detector materials (solid state); Solid state detectors  
  Abstract The semiconductor tracker (SCT) is one of the tracking systems for charged particles in the ATLAS detector. It consists of 4088 silicon strip sensor modules. During Run 2 (2015-2018) the Large Hadron Collider delivered an integrated luminosity of 156 fb(-1) to the ATLAS experiment at a centre-of-mass proton-proton collision energy of 13 TeV. The instantaneous luminosity and pile-up conditions were far in excess of those assumed in the original design of the SCT detector. Due to improvements to the data acquisition system, the SCT operated stably throughout Run 2. It was available for 99.9% of the integrated luminosity and achieved a data-quality efficiency of 99.85%. Detailed studies have been made of the leakage current in SCT modules and the evolution of the full depletion voltage, which are used to study the impact of radiation damage to the modules. '  
  Address [Jackson, P.; Kong, A. X. Y.; Potti, H.; Ruggeri, T. A.; Sharma, A. S.; White, M. J.] Univ Adelaide, Dept Phys, Adelaide, SA, Australia  
  Corporate Author Thesis  
  Publisher IOP Publishing Ltd Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1748-0221 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000766149300002 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 5174  
Permanent link to this record
 

 
Author (up) ATLAS Collaboration (Aad, G. et al); Aparisi Pozo, J.A.; Bailey, A.J.; Cabrera Urban, S.; Cardillo, F.; Castillo, F.L.; Castillo Gimenez, V.; Costa, M.J.; Escobar, C.; Estrada Pastor, O.; Fiorini, L.; Fullana Torregrosa, E.; Fuster, J.; Garcia, C.; Garcia Navarro, J.E.; Gonzalez de la Hoz, S.; Gonzalvo Rodriguez, G.R.; Guerrero Rojas, J.G.R.; Higon-Rodriguez, E.; Lacasta, C.; Lozano Bahilo, J.J.; Mamuzic, J.; Marti-Garcia, S.; Martinez Agullo, P.; Miralles Lopez, M.; Mitsou, V.A.; Moreno Llacer, M.; Navarro-Gonzalez, J.; Poveda, J.; Prades Ibañez, A.; Rodriguez Bosca, S.; Ruiz-Martinez, A.; Sabatini, P.; Salt, J.; Sayago Galvan, I.; Soldevila, U.; Sanchez, J.; Torro Pastor, E.; Valero, A.; Valls Ferrer, J.A.; Villaplana Perez, M.; Vos, M. url  doi
openurl 
  Title Measurements of sensor radiation damage in the ATLAS inner detector using leakage currents Type Journal Article
  Year 2021 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.  
  Volume 16 Issue 8 Pages P08025 - 46pp  
  Keywords Radiation damage to detector materials (solid state); Detector modelling and simulations I (interaction of radiation with matter, interaction of photons with matter, interaction of hadrons with matter, etc)  
  Abstract Non-ionizing energy loss causes bulk damage to the silicon sensors of the ATLAS pixel and strip detectors. This damage has important implications for data-taking operations, charged-particle track reconstruction, detector simulations, and physics analysis. This paper presents simulations and measurements of the leakage current in the ATLAS pixel detector and semiconductor tracker as a function of location in the detector and time, using data collected in Run 1 (2010-2012) and Run 2 (2015-2018) of the Large Hadron Collider. The extracted fluence shows a much stronger vertical bar z vertical bar-dependence in the innermost layers than is seen in simulation. Furthermore, the overall fluence on the second innermost layer is significantly higher than in simulation, with better agreement in layers at higher radii. These measurements are important for validating the simulation models and can be used in part to justify safety factors for future detector designs and interventions.  
  Address [Duvnjak, D.; Jackson, P.; Kong, A. X. Y.; Oliver, J. L.; Ruggeri, T. A.; Sharma, A. S.; White, M. J.] Univ Adelaide, Dept Phys, Adelaide, SA, Australia  
  Corporate Author Thesis  
  Publisher IOP Publishing Ltd Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1748-0221 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000706929300001 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 5004  
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Author (up) Hara, K. et al; Escobar, C.; Garcia, C.; Lacasta, C.; Miñano, M.; Soldevila, U. doi  openurl
  Title Charge collection study with the ATLAS ITk prototype silicon strip sensors ATLAS17LS Type Journal Article
  Year 2020 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 983 Issue Pages 164422 - 6pp  
  Keywords ATLAS ITk; Microstrip sensor; Charge collection; Radiation damage  
  Abstract The inner tracker of the ATLAS detector is scheduled to be replaced by a completely new silicon-based inner tracker (ITk) for the Phase-II of the CERN LHC (HL-LHC). The silicon strip detector covers the volume 40 < R < 100 cm in the radial and vertical bar z vertical bar <300 cm in the longitudinal directions. The silicon sensors for the detector will be fabricated using the n(+)-on-p 6-inch wafer technology, for a total of 22,000 wafers. Intensive studies were carried out on the final prototype sensors ATLAS17LS fabricated by Hamamatsu Photonics (HPK). The charge collection properties were examined using penetrating Sr-90 beta-rays and the ALIBAVA fast readout system for the miniature sensors of 1 cm xl cm in area. The samples were irradiated by protons in the 27 MeV Birmingham Cyclotron, the 70 MeV CYRIC at Tohoku University, and the 24 GeV CERN-PS, and by neutrons at Ljubljana TAIGA reactor for fluence values up to 2 x 10(15) n(eq)/cm(2). The change in the charge collection with fluence was found to be similar to the previous prototype ATLAS12, and acceptable for the ITk. Sensors with two active thicknesses, 300 μm (standard) and 240 μm (thin), were compared and the difference in the charge collection was observed to be small for bias voltages up to 500 V. Some samples were also irradiated with gamma radiation up to 2 MGy, and the full depletion voltage was found to decrease with the dose. This was caused by the Compton electrons due to the( 60)Co gamma radiation. To summarize, the design of the ATLAS17LS and technology for its fabrication have been verified for implementation in the ITk. We are in the stage of sensor pre-production with the first sensors already delivered in January of 2020.  
  Address [Hara, K.] Univ Tsukuba, Inst Pure & Appl Sci, Tsukuba, Ibaraki 3058571, Japan, Email: hara@hep.px.tsukuba.ac.jp  
  Corporate Author Thesis  
  Publisher Elsevier Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000581808300002 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 4606  
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Author (up) Schreeck, H.; Paschen, B.; Wieduwilt, P.; Ahlburg, P.; Andricek, L.; Dingfelder, J.; Frey, A.; Lutticke, F.; Marinas, C.; Richter, R.; Schwenker, B. doi  openurl
  Title Effects of gamma irradiation on DEPFET pixel sensors for the Belle II experiment Type Journal Article
  Year 2020 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 959 Issue Pages 163522 - 9pp  
  Keywords DEPFET; Radiation damage; Particle tracking detectors; Belle II  
  Abstract For the Belle II experiment at KEK (Tsukuba, Japan) the KEKB accelerator was upgraded to deliver a 40 times larger instantaneous luminosity than before, which requires an increased radiation hardness of the detector components. As the innermost part of the Belle II detector, the pixel detector (PXD), based on DEPFET (DEpleted P-channel Field Effect Transistor) technology, is most exposed to radiation from the accelerator. An irradiation campaign was performed to verify that the PXD can cope with the expected amount of radiation. We present the results of this measurement campaign in which an X-ray machine was used to irradiate a single PXD half-ladder to a total dose of 266 kGy. The half-ladder is from the same batch as the half-ladders used for Belle II. According to simulations, the total accumulated dose corresponds to 7-10 years of Belle II operation. While individual components have been irradiated before, this campaign is the first full system irradiation. We discuss the effects on the DEPFET sensors, as well as the performance of the front-end electronics. In addition, we present efficiency studies of the half-ladder from beam tests performed before and after the irradiation.  
  Address [Schreeck, Harrison; Wieduwilt, Philipp; Frey, Ariane; Schwenker, Benjamin] Georg August Univ Gottingen, Phys Inst 2, Friedrich Hund Pl 1, D-37077 Gottingen, Germany, Email: harrison.schreeck@phys.uni-goettingen.de  
  Corporate Author Thesis  
  Publisher Elsevier Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000518368800016 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 4316  
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