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Author  |
Andricek, L. et al; Lacasta, C.; Marinas, C.; Vos, M. |
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Title |
Intrinsic resolutions of DEPFET detector prototypes measured at beam tests |
Type |
Journal Article |
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Year |
2011 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
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Volume |
638 |
Issue |
1 |
Pages |
24-32 |
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Keywords |
Silicon pixel detector; Detector resolution; Spatial resolution; DEPFET; Beam test |
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Abstract |
The paper is based on the data of the 2009 DEPFET beam test at CERN SPS. The beam test used beams of pions and electrons with energies between 40 and 120 GeV, and the sensors tested were prototypes with thickness of 450 μm and pixel pitch between 20 and 32 μm. Intrinsic resolutions of the detectors are calculated by disentangling the contributions of measurement errors and multiple scattering in tracking residuals. Properties of the intrinsic resolution estimates and factors that influence them are discussed. For the DEPFET detectors in the beam test, the calculation yields intrinsic resolutions of approximate to 1 μm, with a typical accuracy of 0.1 μm. Bias scan, angle scan, and energy scan are used as example studies to show that the intrinsic resolutions are a useful tool in studies of detector properties. With sufficiently precise telescopes, detailed resolution maps can be constructed and used to study and optimize detector performance. |
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Address |
[Dolezal, Z.; Drasal, Z.; Kodys, P.; Kvasnicka, P.; Malina, L.; Scheirich, J.] Charles Univ Prague, Fac Math & Phys, Inst Particle & Nucl Phys, CR-18000 Prague, Czech Republic, Email: peter.kodys@mff.cuni.cz |
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Publisher |
Elsevier Science Bv |
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Language |
English |
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ISSN |
0168-9002 |
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ISI:000290082600005 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
618 |
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Author |
Belle-II DEPFET and PXD Collaboration (Ye, H. et al); Boronat, M.; Esperante, D.; Fuster, J.; Gomis, P.; Lacasta, C.; Vos, M. |
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Title |
Commissioning and performance of the Belle II pixel detector |
Type |
Journal Article |
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Year |
2021 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
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Volume |
987 |
Issue |
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Pages |
164875 - 5pp |
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Keywords |
Belle II; Pixel detector; DEPFET |
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Abstract |
The Belle II experiment at the SuperKEKB energy-asymmetric e(+)e(-) collider has completed a series of substantial upgrades and started collecting data in 2019. The experiment is expected to accumulate a data set of 50 ab(-1) to explore new physics beyond the Standard Model at the intensity frontier. The pixel detector (PXD) of Belle II plays a key role in vertex determination. It has been developed using the DEpleted P-channel Field Effect Transistor (DEPFET) technology, which combines low power consumption in the active pixel area and low intrinsic noise with a very small material budget. In this paper, commissioning and performance of the PXD measured with first collision data are presented. |
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Address |
[Alonso, O.; Dieguez, A.] Univ Barcelona, C Marti Franques 1, Barcelona 08028, Spain, Email: hua.ye@desy.de |
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Publisher |
Elsevier |
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Language |
English |
Summary Language |
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Original Title |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0168-9002 |
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Conference |
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Notes |
WOS:000597154800008 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
4653 |
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Author |
Belle-II DEPFET and PXD Collaborations (Wang, B. et al); Marinas, C. |
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Title |
Operational experience of the Belle II pixel detector |
Type |
Journal Article |
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Year |
2022 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
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Volume |
1032 |
Issue |
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Pages |
166631 - 7pp |
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Keywords |
Belle II PXD; DEPFET; Pixel detector; Vertex detector |
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Abstract |
The Belle II experiment at the SuperKEKB accelerator has started its physics data taking with the full detector setup in March 2019. It aims to collect 40 times more e+e- collision data compared with its predecessor Belle experiment. The Belle II pixel detector (PXD) is based on the Depleted P-channel Field Effect Transistor (DEPFET) technology. The PXD plays an important role in the tracking and vertexing of the Belle II detector. Its two layers are arranged at radii of 14 mm and 22 mm around the interaction point. The sensors are thinned down to 75 μm to minimize multiple scattering, and each module has interconnects and ASICs integrated on the sensor with silicon frames for mechanical support. PXD showed good performance during data taking. It also faces several operational challenges due to the high background level from the SuperKEKB accelerator, such as the damage from beam loss events, the drift in the HV working point due to radiation effect, and the impact of the high background. |
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Address |
[Alonso, O.; Dieguez, A.] Univ Barcelona, C Marti Franques 1, Barcelona 08028, Spain, Email: wang@mpp.mpg.de |
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Publisher |
Elsevier |
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English |
Summary Language |
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Original Title |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0168-9002 |
ISBN |
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Expedition |
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Conference |
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Notes |
WOS:000793768200001 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
5227 |
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Author |
DEPFET collaboration (Alonso, O. et al); Boronat, M.; Esperante-Pereira, D.; Fuster, J.; Garcia, I.G.; Lacasta, C.; Oyanguren, A.; Ruiz, P.; Timon, G.; Vos, M. |
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Title |
DEPFET Active Pixel Detectors for a Future Linear e(+)e(-) Collider |
Type |
Journal Article |
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Year |
2013 |
Publication |
IEEE Transactions on Nuclear Science |
Abbreviated Journal |
IEEE Trans. Nucl. Sci. |
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Volume |
60 |
Issue |
2 |
Pages |
1457-1465 |
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Keywords |
Active pixel sensor; DEPFET; linear collider; vertex detector |
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Abstract |
The DEPFET collaboration develops highly granular, ultra-transparent active pixel detectors for high-performance vertex reconstruction at future collider experiments. The characterization of detector prototypes has proven that the key principle, the integration of a first amplification stage in a detector-grade sensor material, can provide a comfortable signal to noise ratio of over 40 for a sensor thickness of 50-75 μm. ASICs have been designed and produced to operate a DEPFET pixel detector with the required read-out speed. A complete detector concept is being developed, including solutions for mechanical support, cooling, and services. In this paper, the status of the DEPFET R & D project is reviewed in the light of the requirements of the vertex detector at a future linear e(+)e(-) collider. |
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Address |
[Alonso, O.; Casanova, R.; Dieguez, A.] Univ Barcelona, E-08028 Barcelona, Spain, Email: marcel.vos@ific.uv.es |
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Publisher |
Ieee-Inst Electrical Electronics Engineers Inc |
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Language |
English |
Summary Language |
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Original Title |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0018-9499 |
ISBN |
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Notes |
WOS:000320856800029 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
1489 |
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| Permanent link to this record |
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Author |
Marinas, C.; Vos, M. |
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Title |
The Belle-II DEPFET pixel detector: A step forward in vertexing in the superKEKB flavour factory |
Type |
Journal Article |
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Year |
2011 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
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Volume |
650 |
Issue |
1 |
Pages |
59-63 |
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Keywords |
SuperKEKB; Belle-II; DEPFET; Pixel detector; ASIC; Mechanics; Cooling; Resolution |
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Abstract |
An upgrade of the successful asymmetric e(+)e(-) collider in KEK (Tsukuba, Japan) is foreseen by the fall of 2013. This new Super Flavor Factory will deliver an increased instantaneous luminosity of up to L = 8 x 10(35) cm(-2) s(-1), 40 times larger than the current KEKB machine. To exploit these new conditions and provide high precision measurements of the decay vertex of the B meson systems, a new silicon vertex detector will be operated in Belle. This new detector will consist of two layers of DEPFET Active Pixel Sensors as close as possible to the interaction point. DEPFET is a field effect transistor, with an additional deep implant underneath the channel's gate, integrated on a completely depleted bulk. This technology offers detection and an in-pixel amplification stage, while keeping low the power consumption. Under these conditions, thin sensors with small pixel size and low intrinsic noise are possible. In this article, an overview of the full system will be described, including the sensor, the front-end electronics and both the mechanical and thermal proposed solutions as well as the expected performance. |
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Address |
[Marinas, C; Vos, M] CSIC UVEG, IFIC, Inst Fis Corpuscular, Valencia, Spain, Email: Carlos.Marinas.Pardo@cern.ch |
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Corporate Author |
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Thesis |
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Publisher |
Elsevier Science Bv |
Place of Publication |
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Editor |
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Language |
English |
Summary Language |
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Original Title |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0168-9002 |
ISBN |
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Medium |
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Area |
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Expedition |
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Conference |
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Notes |
WOS:000295106500015 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
no |
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Call Number |
IFIC @ elepoucu @ |
Serial |
768 |
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| Permanent link to this record |
