NEXT Collaboration, Carcel, S., Carrion, J. V., Felkai, R., Kekic, M., Lopez-March, N., et al. (2020). Mitigation of backgrounds from cosmogenic Xe-137 in xenon gas experiments using He-3 neutron capture. J. Phys. G, 47(7), 075001–17pp.
Abstract: Xe-136 is used as the target medium for many experiments searching for 0 nu beta beta. Despite underground operation, cosmic muons that reach the laboratory can produce spallation neutrons causing activation of detector materials. A potential background that is difficult to veto using muon tagging comes in the form of Xe-137 created by the capture of neutrons on Xe-136. This isotope decays via beta decay with a half-life of 3.8 min and a Q(beta) of similar to 4.16 MeV. This work proposes and explores the concept of adding a small percentage of He-3 to xenon as a means to capture thermal neutrons and reduce the number of activations in the detector volume. When using this technique we find the contamination from Xe-137 activation can be reduced to negligible levels in tonne and multi-tonne scale high pressure gas xenon neutrinoless double beta decay experiments running at any depth in an underground laboratory.
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Loya Villalpando, A. A., Martin-Albo, J., Chen, W. T., Guenette, R., Lego, C., Park, J. S., et al. (2020). Improving the light collection efficiency of silicon photomultipliers through the use of metalenses. J. Instrum., 15(11), P11021–13pp.
Abstract: Metalenses are optical devices that implement nanostructures as phase shifters to focus incident light. Their compactness and simple fabrication make them a potential cost-effective solution for increasing light collection efficiency in particle detectors with limited photosensitive area coverage. Here we report on the characterization and performance of metalenses in increasing the light collection efficiency of silicon photomultipliers (SiPM) of various sizes using an LED of 630 nm, and find a six to seven-fold increase in signal for a 1.3 x 1 3 mm(2) SiPM when coupled with a 10-mm-diameter metalens manufactured using deep ultraviolet stepper lithography. Such improvements could be valuable for future generations of particle detectors, particularly those employed in rare-event searches such as dark matter and neutrinoless double beta decay.
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Poley, L., Blue, A., Bloch, I., Buttar, C., Fadeyev, V., Fernandez-Tejero, J., et al. (2019). Mapping the depleted area of silicon diodes using a micro-focused X-ray beam. J. Instrum., 14, P03024–14pp.
Abstract: For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker (ITk). The ITk will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of 500V to maintain a low noise and power dissipation. In order to minimise sensor leakage currents, particularly in the high-radiation environment inside the ATLAS detector, sensors are foreseen to be operated at low temperatures and to be manufactured from wafers with a high bulk resistivity of several k Omega.cm. Simulations showed the electric field inside sensors with high bulk resistivity to extend towards the sensor edge, which could lead to increased surface currents for narrow dicing edges. In order to map the electric field inside biased silicon sensors with high bulk resistivity, three diodes from ATLAS silicon strip sensor prototype wafers were studied with a monochromatic, micro-focused X-ray beam at the Diamond Light Source (Didcot, U.K.). For all devices under investigation, the electric field inside the diode was mapped and its dependence on the applied bias voltage was studied.
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ATLAS Collaboration(Aaboud, M. et al), Alvarez Piqueras, D., Aparisi Pozo, J. A., Bailey, A. J., Barranco Navarro, L., Cabrera Urban, S., et al. (2019). Modelling radiation damage to pixel sensors in the ATLAS detector. J. Instrum., 14, P06012–52pp.
Abstract: Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 10(15) 1 MeV n(eq)/cm(2), while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (<= 10(15) 1 MeV n(eq)/cm(2)).
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Double Chooz collaboration(Abrahao, T. et al), & Novella, P. (2018). Novel event classification based on spectral analysis of scintillation waveforms in Double Chooz. J. Instrum., 13, P01031–26pp.
Abstract: Liquid scintillators are a common choice for neutrino physics experiments, but their capabilities to perform background rejection by scintillation pulse shape discrimination is generally limited in large detectors. This paper describes a novel approach for a pulse shape based event classification developed in the context of the Double Chooz reactor antineutrino experiment. Unlike previous implementations, this method uses the Fourier power spectra of the scintillation pulse shapes to obtain event-wise information. A classification variable built from spectral information was able to achieve an unprecedented performance, despite the lack of optimization at the detector design level. Several examples of event classification are provided, ranging from differentiation between the detector volumes and an efficient rejection of instrumental light noise, to some sensitivity to the particle type, such as stopping muons, ortho-positronium formation, alpha particles as well as electrons and positrons. In combination with other techniques the method is expected to allow for a versatile and more efficient background rejection in the future, especially if detector optimization is taken into account at the design level.
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