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ATLAS Collaboration(Aad, G. et al), Amoros, G., Cabrera Urban, S., Campabadal Segura, F., Castillo Gimenez, V., Costa, M. J., et al. (2010). Drift Time Measurement in the ATLAS Liquid Argon Electromagnetic Calorimeter using Cosmic Muons. Eur. Phys. J. C, 70(3), 755–785.
Abstract: The ionization signals in the liquid argon of the ATLAS electromagnetic calorimeter are studied in detail using cosmic muons. In particular, the drift time of the ionization electrons is measured and used to assess the intrinsic uniformity of the calorimeter gaps and estimate its impact on the constant term of the energy resolution. The drift times of electrons in the cells of the second layer of the calorimeter are uniform at the level of 1.3% in the barrel and 2.8% in the endcaps. This leads to an estimated contribution to the constant term of (0.29(-0.04)(+0.05))% in the barrel and (0.54(-0.04)(+0.06))% in the endcaps. The same data are used to measure the drift velocity of ionization electrons in liquid argon, which is found to be 4.61 +/- 0.07 mm/mu s at 88.5 K and 1 kV/mm.
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Miñano, M. (2011). Radiation Hard Silicon Strips Detectors for the SLHC. IEEE Trans. Nucl. Sci., 58(3), 1135–1140.
Abstract: While the Large Hadron Collider (LHC) began taking data in 2009, scenarios for a machine upgrade to achieve a much higher luminosity are being developed. In the current planning, it is foreseen to increase the luminosity of the LHC at CERN around 2018. As radiation damage scales with integrated luminosity, the particle physics experiments will need to be equipped with a new generation of radiation hard detectors. This article reports on the status of the R&D projects on radiation hard silicon strips detectors for particle physics, linked to the Large Hadron Collider Upgrade, super-LHC (sLHC) of the ATLAS microstrip detector. The primary focus of this report is on measuring the radiation hardness of the silicon materials and the detectors under study. This involves designing silicon detectors, irradiating them to the sLHC radiation levels and studying their performance as particle detectors. The most promising silicon detector for the different radiation levels in the different regions of the ATLAS microstrip detector will be presented. Important challenges related to engineering layout, powering, cooling and reading out a very large strip detector are presented. Ideas on possible schemes for the layout and support mechanics will be shown.
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Affolder, A. et al, Garcia, C., Lacasta, C., Marco, R., Marti-Garcia, S., Miñano, M., et al. (2011). Silicon detectors for the sLHC. Nucl. Instrum. Methods Phys. Res. A, 658(1), 11–16.
Abstract: In current particle physics experiments, silicon strip detectors are widely used as part of the inner tracking layers. A foreseeable large-scale application for such detectors consists of the luminosity upgrade of the Large Hadron Collider (LHC), the super-LHC or sLHC, where silicon detectors with extreme radiation hardness are required. The mission statement of the CERN RD50 Collaboration is the development of radiation-hard semiconductor devices for very high luminosity colliders. As a consequence, the aim of the R&D programme presented in this article is to develop silicon particle detectors able to operate at sLHC conditions. Research has progressed in different areas, such as defect characterisation, defect engineering and full detector systems. Recent results from these areas will be presented. This includes in particular an improved understanding of the macroscopic changes of the effective doping concentration based on identification of the individual microscopic defects, results from irradiation with a mix of different particle types as expected for the sLHC, and the observation of charge multiplication effects in heavily irradiated detectors at very high bias voltages.
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ATLAS Collaboration(Aad, G. et al), Cabrera Urban, S., Castillo Gimenez, V., Costa, M. J., Fassi, F., Ferrer, A., et al. (2013). Search for direct slepton and gaugino production in final states with two leptons and missing transverse momentum with the ATLAS detector in pp collisions at root s=7 TeV. Phys. Lett. B, 718(3), 879–901.
Abstract: A search for the electroweak pair production of charged sleptons and weak gauginos decaying into final states with two leptons is performed using 4.7 fb(-1) of proton-proton collision data at root s = 7 TeV recorded with the ATLAS experiment at the Large Hadron Collider. No significant excesses are observed with respect to the prediction from Standard Model processes. In the scenario of direct slepton production, if the sleptons decay directly into the lightest neutralino, left-handed slepton masses between 85 and 195 GeV are excluded at 95% confidence level for a 20 GeV neutralino. Chargino masses between 110 and 340 GeV are excluded in the scenario of direct production of wino-like chargino pairs decaying into the lightest neutralino via an intermediate on-shell charged slepton for a 10 GeV neutralino. The results are also interpreted in the framework of the phenomenological minimal supersymmetric Standard Model.
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Poley, L., Blue, A., Bloch, I., Buttar, C., Fadeyev, V., Fernandez-Tejero, J., et al. (2019). Mapping the depleted area of silicon diodes using a micro-focused X-ray beam. J. Instrum., 14, P03024–14pp.
Abstract: For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker (ITk). The ITk will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of 500V to maintain a low noise and power dissipation. In order to minimise sensor leakage currents, particularly in the high-radiation environment inside the ATLAS detector, sensors are foreseen to be operated at low temperatures and to be manufactured from wafers with a high bulk resistivity of several k Omega.cm. Simulations showed the electric field inside sensors with high bulk resistivity to extend towards the sensor edge, which could lead to increased surface currents for narrow dicing edges. In order to map the electric field inside biased silicon sensors with high bulk resistivity, three diodes from ATLAS silicon strip sensor prototype wafers were studied with a monochromatic, micro-focused X-ray beam at the Diamond Light Source (Didcot, U.K.). For all devices under investigation, the electric field inside the diode was mapped and its dependence on the applied bias voltage was studied.
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