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T2K Collaboration (Abe, K. et al); Antonova, M.; Cervera-Villanueva, A.; Molina Bueno, L.; Novella, P. Scintillator ageing of the T2K near detectors fro 2010 to 2021 2022 Journal of Instrumentation 17 P10028 - 36pp details   doi
ATLAS Collaboration (Aad, G. et al); Aparisi Pozo, J.A.; Bailey, A.J.; Cabrera Urban, S.; Cardillo, F.; Castillo, F.L.; Castillo Gimenez, V.; Costa, M.J.; Escobar, C.; Estrada Pastor, O.; Fiorini, L.; Fullana Torregrosa, E.; Fuster, J.; Garcia, C.; Garcia Navarro, J.E.; Gonzalez de la Hoz, S.; Gonzalvo Rodriguez, G.R.; Guerrero Rojas, J.G.R.; Higon-Rodriguez, E.; Lacasta, C.; Lozano Bahilo, J.J.; Mamuzic, J.; Marti-Garcia, S.; Martinez Agullo, P.; Miralles Lopez, M.; Mitsou, V.A.; Moreno Llacer, M.; Navarro-Gonzalez, J.; Poveda, J.; Prades Ibañez, A.; Rodriguez Bosca, S.; Ruiz-Martinez, A.; Sabatini, P.; Salt, J.; Sayago Galvan, I.; Soldevila, U.; Sanchez, J.; Torro Pastor, E.; Valero, A.; Valls Ferrer, J.A.; Villaplana Perez, M.; Vos, M. Measurements of sensor radiation damage in the ATLAS inner detector using leakage currents 2021 Journal of Instrumentation 16 P08025 - 46pp details   doi
Hiti, B.; Cindro, V.; Gorisek, A.; Franks, M.; Marco-Hernandez, R.; Kramberger, G.; Mandic, I.; Mikuz, M.; Powell, S.; Steininger, H.; Vilella, E.; Zavrtanik, M.; Zhang, C. Characterisation of analogue front end and time walk in CMOS active pixel sensor 2021 Journal of Instrumentation 16 P12020 - 12pp details   doi
Loya Villalpando, A.A.; Martin-Albo, J.; Chen, W.T.; Guenette, R.; Lego, C.; Park, J.S.; Capasso, F. Improving the light collection efficiency of silicon photomultipliers through the use of metalenses 2020 Journal of Instrumentation 15 P11021 - 13pp details   doi
Poley, L.; Blue, A.; Bloch, I.; Buttar, C.; Fadeyev, V.; Fernandez-Tejero, J.; Fleta, C.; Hacker, J.; Lacasta, C.; Miñano, M.; Renzmann, M.; Rossi, E.; Sawyer, C.; Sperlich, D.; Stegler, M.; Ullan, M.; Unno, Y. Mapping the depleted area of silicon diodes using a micro-focused X-ray beam 2019 Journal of Instrumentation 14 P03024 - 14pp details   doi
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