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Author T2K Collaboration (Abe, K. et al); Antonova, M.; Cervera-Villanueva, A.; Molina Bueno, L.; Novella, P.
Title Scintillator ageing of the T2K near detectors fro 2010 to 2021 Type Journal Article
Year 2022 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume (down) 17 Issue 10 Pages P10028 - 36pp
Keywords Gamma detectors (scintillators, CZT, HPGe, HgI etc); Neutrino detectors; Performance of High Energy Physics Detectors; Scintillators; scintillation and light emission processes (solid, gas and liquid scintillators)
Abstract The T2K experiment widely uses plastic scintillator as a target for neutrino interactions and an active medium for the measurement of charged particles produced in neutrino interactions at its near detector complex. Over 10 years of operation the measured light yield recorded by the scintillator based subsystems has been observed to degrade by 0.9-2.2% per year. Extrapolation of the degradation rate through to 2040 indicates the recorded light yield should remain above the lower threshold used by the current reconstruction algorithms for all subsystems. This will allow the near detectors to continue contributing to important physics measurements during the T2K-II and Hyper-Kamiokande eras. Additionally, work to disentangle the degradation of the plastic scintillator and wavelength shifting fibres shows that the reduction in light yield can be attributed to the ageing of the plastic scintillator. The long component of the attenuation length of the wavelength shifting fibres was observed to degrade by 1.3-5.4% per year, while the short component of the attenuation length did not show any conclusive degradation.
Address [Labarga, L.] Univ Autonoma Madrid, Dept Theoret Phys, ES-28049 Madrid, Spain, Email: m.lawe@lancaster.ac.uk
Corporate Author Thesis
Publisher IOP Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000898723700007 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 5442
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Author ATLAS Collaboration (Aad, G. et al); Aparisi Pozo, J.A.; Bailey, A.J.; Cabrera Urban, S.; Cardillo, F.; Castillo, F.L.; Castillo Gimenez, V.; Costa, M.J.; Escobar, C.; Estrada Pastor, O.; Fiorini, L.; Fullana Torregrosa, E.; Fuster, J.; Garcia, C.; Garcia Navarro, J.E.; Gonzalez de la Hoz, S.; Gonzalvo Rodriguez, G.R.; Guerrero Rojas, J.G.R.; Higon-Rodriguez, E.; Lacasta, C.; Lozano Bahilo, J.J.; Mamuzic, J.; Marti-Garcia, S.; Martinez Agullo, P.; Miralles Lopez, M.; Mitsou, V.A.; Moreno Llacer, M.; Navarro-Gonzalez, J.; Poveda, J.; Prades Ibañez, A.; Rodriguez Bosca, S.; Ruiz-Martinez, A.; Sabatini, P.; Salt, J.; Sayago Galvan, I.; Soldevila, U.; Sanchez, J.; Torro Pastor, E.; Valero, A.; Valls Ferrer, J.A.; Villaplana Perez, M.; Vos, M.
Title Measurements of sensor radiation damage in the ATLAS inner detector using leakage currents Type Journal Article
Year 2021 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume (down) 16 Issue 8 Pages P08025 - 46pp
Keywords Radiation damage to detector materials (solid state); Detector modelling and simulations I (interaction of radiation with matter, interaction of photons with matter, interaction of hadrons with matter, etc)
Abstract Non-ionizing energy loss causes bulk damage to the silicon sensors of the ATLAS pixel and strip detectors. This damage has important implications for data-taking operations, charged-particle track reconstruction, detector simulations, and physics analysis. This paper presents simulations and measurements of the leakage current in the ATLAS pixel detector and semiconductor tracker as a function of location in the detector and time, using data collected in Run 1 (2010-2012) and Run 2 (2015-2018) of the Large Hadron Collider. The extracted fluence shows a much stronger vertical bar z vertical bar-dependence in the innermost layers than is seen in simulation. Furthermore, the overall fluence on the second innermost layer is significantly higher than in simulation, with better agreement in layers at higher radii. These measurements are important for validating the simulation models and can be used in part to justify safety factors for future detector designs and interventions.
Address [Duvnjak, D.; Jackson, P.; Kong, A. X. Y.; Oliver, J. L.; Ruggeri, T. A.; Sharma, A. S.; White, M. J.] Univ Adelaide, Dept Phys, Adelaide, SA, Australia
Corporate Author Thesis
Publisher IOP Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000706929300001 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 5004
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Author Hiti, B.; Cindro, V.; Gorisek, A.; Franks, M.; Marco-Hernandez, R.; Kramberger, G.; Mandic, I.; Mikuz, M.; Powell, S.; Steininger, H.; Vilella, E.; Zavrtanik, M.; Zhang, C.
Title Characterisation of analogue front end and time walk in CMOS active pixel sensor Type Journal Article
Year 2021 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume (down) 16 Issue 12 Pages P12020 - 12pp
Keywords Charge induction; Radiation-hard detectors; Solid state detectors
Abstract In this work we investigated a method to determine time walk in an active silicon pixel sensor prototype using Edge-TCT with infrared laser charge injection. Samples were investigated before and after neutron irradiation to 5 . 10(14) n(eq)/cm(2). Threshold, noise and calibration of the analogue front end were determined with external charge injection. A spatially sensitive measurement of collected charge and time walk was carried out with Edge-TCT, showing a uniform charge collection and output delay in pixel centre. On pixel edges charge sharing was observed due to finite beam width resulting in smaller signals and larger output delay. Time walk below 25 ns was observed for charge above 2000 e(-) at a threshold above the noise level. Time walk measurement with external charge injection yielded identical results.
Address [Hiti, B.; Cindro, V.; Gorisek, A.; Kramberger, G.; Mandic, I.; Mikuz, M.; Zavrtanik, M.] Jozef Stefan Inst, Jamova Cesta 39, Ljubljana, Slovenia, Email: bojan.hiti@ijs.si
Corporate Author Thesis
Publisher IOP Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000758055400055 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 5138
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Author Loya Villalpando, A.A.; Martin-Albo, J.; Chen, W.T.; Guenette, R.; Lego, C.; Park, J.S.; Capasso, F.
Title Improving the light collection efficiency of silicon photomultipliers through the use of metalenses Type Journal Article
Year 2020 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume (down) 15 Issue 11 Pages P11021 - 13pp
Keywords Optical detector readout concepts; Solid state detectors; Dark Matter detectors (WIMPS, axions, etc); Double-beta decay detectors
Abstract Metalenses are optical devices that implement nanostructures as phase shifters to focus incident light. Their compactness and simple fabrication make them a potential cost-effective solution for increasing light collection efficiency in particle detectors with limited photosensitive area coverage. Here we report on the characterization and performance of metalenses in increasing the light collection efficiency of silicon photomultipliers (SiPM) of various sizes using an LED of 630 nm, and find a six to seven-fold increase in signal for a 1.3 x 1 3 mm(2) SiPM when coupled with a 10-mm-diameter metalens manufactured using deep ultraviolet stepper lithography. Such improvements could be valuable for future generations of particle detectors, particularly those employed in rare-event searches such as dark matter and neutrinoless double beta decay.
Address [Villalpando, A. A. Loya; Martin-Albo, J.; Guenette, R.; Lego, C.] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA, Email: aloyavil@caltech.edu
Corporate Author Thesis
Publisher Iop Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000595650800009 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 4634
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Author Poley, L.; Blue, A.; Bloch, I.; Buttar, C.; Fadeyev, V.; Fernandez-Tejero, J.; Fleta, C.; Hacker, J.; Lacasta, C.; Miñano, M.; Renzmann, M.; Rossi, E.; Sawyer, C.; Sperlich, D.; Stegler, M.; Ullan, M.; Unno, Y.
Title Mapping the depleted area of silicon diodes using a micro-focused X-ray beam Type Journal Article
Year 2019 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume (down) 14 Issue Pages P03024 - 14pp
Keywords Si microstrip and pad detectors; Detector design and construction technologies and materials; Particle tracking detectors (Solid-state detectors); Radiation-hard detectors
Abstract For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker (ITk). The ITk will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of 500V to maintain a low noise and power dissipation. In order to minimise sensor leakage currents, particularly in the high-radiation environment inside the ATLAS detector, sensors are foreseen to be operated at low temperatures and to be manufactured from wafers with a high bulk resistivity of several k Omega.cm. Simulations showed the electric field inside sensors with high bulk resistivity to extend towards the sensor edge, which could lead to increased surface currents for narrow dicing edges. In order to map the electric field inside biased silicon sensors with high bulk resistivity, three diodes from ATLAS silicon strip sensor prototype wafers were studied with a monochromatic, micro-focused X-ray beam at the Diamond Light Source (Didcot, U.K.). For all devices under investigation, the electric field inside the diode was mapped and its dependence on the applied bias voltage was studied.
Address [Poley, L.] Lawrence Berkeley Natl Lab, Cyclotron Rd, Berkeley, CA 94720 USA, Email: Anne-Luise.Poley@desy.de
Corporate Author Thesis
Publisher Iop Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000463330900012 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 3973
Permanent link to this record