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Latonova, V. et al, Bernabeu, J., Lacasta, C., Solaz, C., & Soldevila, U. (2023). Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation. Nucl. Instrum. Methods Phys. Res. A, 1050, 168119–5pp.
Abstract: The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb(-1) means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 center dot 10(15) MeVn(eq)/cm(2) and 0.66MGy, respectively, including a safety factor of 1.5. Radiation hard n(+)-in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n(+) implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. We discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips.
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Goasduff, A. et al, & Gadea, A. (2021). The GALILEO gamma-ray array at the Legnaro National Laboratories. Nucl. Instrum. Methods Phys. Res. A, 1015, 165753–15pp.
Abstract: GALILEO, a new 4 pi high-resolution gamma-detection array, based on HPGe detectors, has been developed and installed at the Legnaro National Laboratories. The GALILEO array greatly benefits from a fully-digital readout chain, customized DAQ, and a variety of complementary detectors to improve the resolving power by the detection of particles, ions or high-energy gamma-ray transitions. In this work, a full description of the array, including electronics and DAQ, is presented together with its complementary instrumentation.
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Barrientos, L., Borja-Lloret, M., Etxebeste, A., Muñoz, E., Oliver, J. F., Ros, A., et al. (2021). Performance evaluation of MACACO II Compton camera. Nucl. Instrum. Methods Phys. Res. A, 1014, 165702–7pp.
Abstract: The IRIS group at IFIC-Valencia has developed a second version of a Compton camera prototype for hadron therapy treatment monitoring, with the aim of improving the performance with respect to its predecessor. The system is composed of three Lanthanum (III) bromide (LaBr3) crystals coupled to silicon photomultipliers (SiPMs). The detector energy resolution has been improved to 5.6% FWHM at 511 keV and an angular resolution of 8.0 degrees has been obtained. Images of a Na-22 point-like source have been reconstructed selecting two and three interaction events. Moreover, the experimental data have been reproduced with Monte Carlo simulations using a Compton camera module (CCMod) in GATE v8.2 obtaining a good correlation.
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Balibrea-Correa, J., Lerendegui-Marco, J., Calvo, D., Caballero, L., Babiano, V., Ladarescu, I., et al. (2021). A first prototype of C6D6 total-energy detector with SiPM readout for neutron capture time-of-flight experiments. Nucl. Instrum. Methods Phys. Res. A, 985, 164709–8pp.
Abstract: Low efficiency total-energy detectors (TEDs) are one of the main tools for neutron capture cross section measurements utilizing the time-of-flight (TOF) technique. State-of-the-art TEDs are based on a C6D6 liquid-scintillation cell optically coupled to a fast photomultiplier tube. The large photomultiplier tube represents yet a significant contribution to the so-called neutron sensitivity background, which is one of the most conspicuous sources of uncertainty in this type of experiments. Here we report on the development of a first prototype of a TED based on a silicon-photomultiplier (SiPM) readout, thus resulting in a lightweight and much more compact detector. Apart from the envisaged improvement in neutron sensitivity, the new system uses low voltage (+28 V) and low current supply (-50 mA), which is more practical than the-kV supply required by conventional photomultipliers. One important difficulty hindering the earlier implementation of SiPM readout for this type of detector was the large capacitance for the output signal when all pixels of a SiPM array are summed together. The latter leads to long pulse rise and decay times, which are not suitable for time-of-flight experiments. In this work we demonstrate the feasibility of a Schottky-diode multiplexing readout approach, that allows one to preserve the excellent timing properties of SiPMs, hereby paving the way for their implementation in future neutron TOF experiments.
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Fernandez-Tejero, J., Bartl, U., Docke, M., Fadeyev, V., Fleta, C., Hacker, J., et al. (2020). Design and evaluation of large area strip sensor prototypes for the ATLAS Inner Tracker detector. Nucl. Instrum. Methods Phys. Res. A, 981, 164536–6pp.
Abstract: The ATLAS community is facing the last stages prior to the production of the upgraded silicon strip Inner Tracker for the High-Luminosity Large Hadron Collider. An extensive Market Survey was carried out in order to evaluate the capability of different foundries to fabricate large area silicon strip sensors, satisfying the ATLAS specifications. The semiconductor manufacturing company, Infineon Technologies AG, was one of the two foundries, along with Hamamatsu Photonics K.K., that reached the last stage of the evaluation for the production of the new devices. The full prototype wafer layout for the participation of Infineon, called ATLAS17LS-IFX, was designed using a newly developed Python-based Automatic Layout Generation Tool, able to rapidly design sensors with different characteristics and dimensions based on a few geometrical and technological input parameters. This work presents the layout design process and the results obtained from the evaluation of the new Infineon large area sensors before and after proton and neutron irradiations, up to fluences expected in the inner layers of the future ATLAS detector.
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