Abstract: The ATLAS experiment will replace its existing Inner Detector with the new all -silicon Inner Tracker (ITk) to cope with the operating conditions of the forthcoming high -luminosity phase of the LHC (HL-LHC). The outer regions of the ITk will be instrumented with similar to 18000 ATLAS18 strip sensors fabricated by Hamamatsu Photonics K.K. (HPK). With the launch of full-scale sensor production in 2021, the ITk strip sensor community has undertaken quality control (QC) testing of these sensors to ensure compliance with mechanical and electrical specifications agreed with HPK. The testing is conducted at seven QC sites on each of the monthly deliveries of similar to 500 sensors. This contribution will give an overview of the QC procedures and analysis; the tests most likely to determine pass/fail for a sensor are IV, long-term leakage current stability, full strip test and visual inspection. The contribution will then present trends in the results and properties following completion of similar to 60% of production testing. It will also mention challenges overcome through collaborative efforts with HPK during the early phases of production. With less than 5% of sensors rejected by QC testing, the overall production quality has been very good.

Abstract: The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb(-1) means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 center dot 10(15) MeVn(eq)/cm(2) and 0.66MGy, respectively, including a safety factor of 1.5. Radiation hard n(+)-in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n(+) implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. We discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips.

Abstract: The ATLAS community is facing the last stages prior to the production of the upgraded silicon strip Inner Tracker for the High-Luminosity Large Hadron Collider. An extensive Market Survey was carried out in order to evaluate the capability of different foundries to fabricate large area silicon strip sensors, satisfying the ATLAS specifications. The semiconductor manufacturing company, Infineon Technologies AG, was one of the two foundries, along with Hamamatsu Photonics K.K., that reached the last stage of the evaluation for the production of the new devices. The full prototype wafer layout for the participation of Infineon, called ATLAS17LS-IFX, was designed using a newly developed Python-based Automatic Layout Generation Tool, able to rapidly design sensors with different characteristics and dimensions based on a few geometrical and technological input parameters. This work presents the layout design process and the results obtained from the evaluation of the new Infineon large area sensors before and after proton and neutron irradiations, up to fluences expected in the inner layers of the future ATLAS detector.

Abstract: The production of large area sensors is one of the main challenges that the ATLAS collaboration faces for the new Inner-Tracker full-silicon detector. During the prototype fabrication phase for the High Luminosity Large Hadron Collider upgrade, several ATLAS institutes observed indications of humidity sensitivity of large area sensors, even at relative humidities well below the dew point. Specifically, prototype Barrel and End-Cap silicon strip sensors fabricated in 6-inch wafers manifest a prompt decrease of the breakdown voltage when operating under high relative humidity, adversely affecting the performance of the sensors. In addition to the investigation of these prototype sensors, a specific fabrication batch with special passivation is also studied, allowing for a deeper understanding of the responsible mechanisms. This work presents an extensive study of this behaviour on large area sensors. The locations of the hotspots at the breakdown voltage at high humidity are revealed using different infrared thermography techniques. Several palliative treatments are attempted, proving the influence of sensor cleaning methods, as well as baking, on the device performance, but no improvement on the humidity sensitivity was achieved. Furthermore, a study of the incidence of the sensitivity in different batches is also presented, introducing a hypothesis of the origins of the humidity sensitivity associated to the sensor edge design, together with passivation thickness and conformity. Several actions to be taken during sensor production and assembly are extracted from this study, in order to minimize the impact of humidity sensitivity on the performance of large area silicon sensors for High Energy Physics experiments.

Abstract: The production of D*(+/-), D-+/- and D-S(+/-) charmed mesons has been measured with the ATLAS detector in pp collisions at,/7s = 7 TeV at the LHC, using data corresponding to an integrated luminosity of 280 nb(-)1(.) The charmed mesons have been reconstructed in the range of transverse momentum 3.5 < p(T)(D) < 100 GeV and pseudorapidity vertical bar eta(D)vertical bar < 2.1. The differential cross sections as a function of transverse momentum and pseudorapidity were measured for D*(+/-) and D-+/- production. The next-to-leading-order QCD predictions are consistent with the data in the visible kinematic region within the large theoretical uncertainties. Using the visible D cross sections and an extrapolation to the full kinematic phase space, the strangeness -suppression factor in charm fragmentation, the fraction of charged non -strange D mesons produced in a vector state, and the total cross section of charm production at root s = 7 TeV were derived.