|
|
Fernandez-Tejero, J., Bartl, U., Docke, M., Fadeyev, V., Fleta, C., Hacker, J., et al. (2020). Design and evaluation of large area strip sensor prototypes for the ATLAS Inner Tracker detector. Nucl. Instrum. Methods Phys. Res. A, 981, 164536–6pp.
Abstract: The ATLAS community is facing the last stages prior to the production of the upgraded silicon strip Inner Tracker for the High-Luminosity Large Hadron Collider. An extensive Market Survey was carried out in order to evaluate the capability of different foundries to fabricate large area silicon strip sensors, satisfying the ATLAS specifications. The semiconductor manufacturing company, Infineon Technologies AG, was one of the two foundries, along with Hamamatsu Photonics K.K., that reached the last stage of the evaluation for the production of the new devices. The full prototype wafer layout for the participation of Infineon, called ATLAS17LS-IFX, was designed using a newly developed Python-based Automatic Layout Generation Tool, able to rapidly design sensors with different characteristics and dimensions based on a few geometrical and technological input parameters. This work presents the layout design process and the results obtained from the evaluation of the new Infineon large area sensors before and after proton and neutron irradiations, up to fluences expected in the inner layers of the future ATLAS detector.
|
|
|
|
Hara, K. et al, Escobar, C., Garcia, C., Lacasta, C., Miñano, M., & Soldevila, U. (2020). Charge collection study with the ATLAS ITk prototype silicon strip sensors ATLAS17LS. Nucl. Instrum. Methods Phys. Res. A, 983, 164422–6pp.
Abstract: The inner tracker of the ATLAS detector is scheduled to be replaced by a completely new silicon-based inner tracker (ITk) for the Phase-II of the CERN LHC (HL-LHC). The silicon strip detector covers the volume 40 < R < 100 cm in the radial and vertical bar z vertical bar <300 cm in the longitudinal directions. The silicon sensors for the detector will be fabricated using the n(+)-on-p 6-inch wafer technology, for a total of 22,000 wafers. Intensive studies were carried out on the final prototype sensors ATLAS17LS fabricated by Hamamatsu Photonics (HPK). The charge collection properties were examined using penetrating Sr-90 beta-rays and the ALIBAVA fast readout system for the miniature sensors of 1 cm xl cm in area. The samples were irradiated by protons in the 27 MeV Birmingham Cyclotron, the 70 MeV CYRIC at Tohoku University, and the 24 GeV CERN-PS, and by neutrons at Ljubljana TAIGA reactor for fluence values up to 2 x 10(15) n(eq)/cm(2). The change in the charge collection with fluence was found to be similar to the previous prototype ATLAS12, and acceptable for the ITk. Sensors with two active thicknesses, 300 μm (standard) and 240 μm (thin), were compared and the difference in the charge collection was observed to be small for bias voltages up to 500 V. Some samples were also irradiated with gamma radiation up to 2 MGy, and the full depletion voltage was found to decrease with the dose. This was caused by the Compton electrons due to the( 60)Co gamma radiation. To summarize, the design of the ATLAS17LS and technology for its fabrication have been verified for implementation in the ITk. We are in the stage of sensor pre-production with the first sensors already delivered in January of 2020.
|
|
|
|
Fernandez-Tejero, J. et al, & Soldevila, U. (2020). Humidity sensitivity of large area silicon sensors: Study and implications. Nucl. Instrum. Methods Phys. Res. A, 978, 164406–6pp.
Abstract: The production of large area sensors is one of the main challenges that the ATLAS collaboration faces for the new Inner-Tracker full-silicon detector. During the prototype fabrication phase for the High Luminosity Large Hadron Collider upgrade, several ATLAS institutes observed indications of humidity sensitivity of large area sensors, even at relative humidities well below the dew point. Specifically, prototype Barrel and End-Cap silicon strip sensors fabricated in 6-inch wafers manifest a prompt decrease of the breakdown voltage when operating under high relative humidity, adversely affecting the performance of the sensors. In addition to the investigation of these prototype sensors, a specific fabrication batch with special passivation is also studied, allowing for a deeper understanding of the responsible mechanisms. This work presents an extensive study of this behaviour on large area sensors. The locations of the hotspots at the breakdown voltage at high humidity are revealed using different infrared thermography techniques. Several palliative treatments are attempted, proving the influence of sensor cleaning methods, as well as baking, on the device performance, but no improvement on the humidity sensitivity was achieved. Furthermore, a study of the incidence of the sensitivity in different batches is also presented, introducing a hypothesis of the origins of the humidity sensitivity associated to the sensor edge design, together with passivation thickness and conformity. Several actions to be taken during sensor production and assembly are extracted from this study, in order to minimize the impact of humidity sensitivity on the performance of large area silicon sensors for High Energy Physics experiments.
|
|
|
|
Benitez, V. et al, Bernabeu, J., Garcia, C., Lacasta, C., Marco, R., Rodriguez, D., et al. (2016). Sensors for the End-cap prototype of the Inner Tracker in the ATLAS Detector Upgrade. Nucl. Instrum. Methods Phys. Res. A, 833, 226–232.
Abstract: The new silicon microstrip sensors of the End-cap part of the HL-LHC ATLAS Inner Tracker (ITk) present a number of challenges due to their complex design features such as the multiple different sensor shapes, the varying strip pitch, or the built-In stereo angle. In order to investigate these specific problems, the “petalet” prototype was defined as a small End-cap prototype. The sensors for the petalet prototype include several new layout and technological solutions to investigate the issues, they have been tested in detail by the collaboration. The sensor description and detailed test results are presented in this paper. New software tools have been developed for the automatic layout generation of the complex designs. The sensors have been fabricated, characterized and delivered to the institutes in the collaboration for their assembly on petalet prototypes. This paper describes the lessons learnt from the design and tests of the new solutions implemented on these sensors, which are being used for the full petal sensor development. This has resulted in the ITIc strip, community acquiring the necessary expertise to develop the full End-cap structure, the petal.
|
|
|
|
Unno, Y. et al, Garcia, C., Jimenez, J., Lacasta, C., Marti-Garcia, S., & Soldevila, U. (2014). Development of n(+) -in-p large-area silicon microstrip sensors for very high radiation environments-ATLAS12 design and initial results. Nucl. Instrum. Methods Phys. Res. A, 765, 80–90.
Abstract: We have been developing a novel radiation tolerant n(+)-in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float zone wafers, where large area strip sensor designs are laid out together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 pm and slim edge space of 450 pm, a gated punch-through protection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers.
|
|
|
|
Ullan, M., Benitez, V., Quirion, D., Zabala, M., Pellegrini, G., Lozano, M., et al. (2014). Low-resistance strip sensors for beam-loss event protection. Nucl. Instrum. Methods Phys. Res. A, 765, 252–257.
Abstract: AC coupled silicon strip sensors can be damaged in case of a beam loss due to the possibility of a large charge accumulation in the bulk, developing very high voltages across the coupling capacitors which can destroy them. Punch-through structures are currently used to avoid this problem helping to evacuate the accumulated charge as large voltages are developing. Nevertheless, previous experiments, performed with laser pulses, have shown that these structures can become ineffective in relatively long strips. The large value of the implant resistance can effectively isolate the “far” end of the strip from the punchthrough structure leading to large voltages. We present here our developments to fabricate lowresistance strip sensors to avoid this problem. The deposition of a conducting material in contact with the implants drastically reduces the strip resistance, assuring the effectiveness of the punch-through structures. First devices have been fabricated with this new technology. Initial results with laser tests show the expected reduction in peak voltages on the low resistivity implants. Other aspects of the sensor performance, including the signal formation, are not affected by the new technology.
|
|
|
|
Affolder, A. et al, Garcia, C., Lacasta, C., Marco, R., Marti-Garcia, S., Miñano, M., et al. (2011). Silicon detectors for the sLHC. Nucl. Instrum. Methods Phys. Res. A, 658(1), 11–16.
Abstract: In current particle physics experiments, silicon strip detectors are widely used as part of the inner tracking layers. A foreseeable large-scale application for such detectors consists of the luminosity upgrade of the Large Hadron Collider (LHC), the super-LHC or sLHC, where silicon detectors with extreme radiation hardness are required. The mission statement of the CERN RD50 Collaboration is the development of radiation-hard semiconductor devices for very high luminosity colliders. As a consequence, the aim of the R&D programme presented in this article is to develop silicon particle detectors able to operate at sLHC conditions. Research has progressed in different areas, such as defect characterisation, defect engineering and full detector systems. Recent results from these areas will be presented. This includes in particular an improved understanding of the macroscopic changes of the effective doping concentration based on identification of the individual microscopic defects, results from irradiation with a mix of different particle types as expected for the sLHC, and the observation of charge multiplication effects in heavily irradiated detectors at very high bias voltages.
|
|
|
|
ATLAS Collaboration(Aad, G. et al), Aparisi Pozo, J. A., Bailey, A. J., Cabrera Urban, S., Castillo, F. L., Castillo Gimenez, V., et al. (2024). Search for quantum black hole production in lepton plus jet final states using proton-proton collisions at √s=13 TeV with the ATLAS detector. Phys. Rev. D, 109(3), 032010–28pp.
Abstract: A search for quantum black holes in electron + jet and muon + jet invariant mass spectra is performed with 140 fb(-1) of data collected by the ATLAS detector in proton-proton collisions at root s = 13 TeV at the Large Hadron Collider. The observed invariant mass spectrum of lepton + jet pairs is consistent with Standard Model expectations. Upper limits are set at 95% confidence level on the production cross section times branching fractions for quantum black holes decaying into a lepton and a quark in a search region with invariant mass above 2.0 TeV. The resulting quantum black hole lower mass threshold limit is 9.2 TeV in the Arkani-Hamed-Dimopoulos-Dvali model, and 6.8 TeV in the Randall-Sundrum model.
|
|
|
|
ATLAS Collaboration(Aad, G. et al), Amoros, G., Cabrera Urban, S., Castillo Gimenez, V., Costa, M. J., Escobar, C., et al. (2010). Observation of a Centrality-Dependent Dijet Asymmetry in Lead-Lead Collisions at root s(NN)=2.76 TeV with the ATLAS Detector at the LHC. Phys. Rev. Lett., 105(25), 252303–18pp.
Abstract: By using the ATLAS detector, observations have been made of a centrality-dependent dijet asymmetry in the collisions of lead ions at the Large Hadron Collider. In a sample of lead-lead events with a per-nucleon center of mass energy of 2.76 TeV, selected with a minimum bias trigger, jets are reconstructed in fine-grained, longitudinally segmented electromagnetic and hadronic calorimeters. The transverse energies of dijets in opposite hemispheres are observed to become systematically more unbalanced with increasing event centrality leading to a large number of events which contain highly asymmetric dijets. This is the first observation of an enhancement of events with such large dijet asymmetries, not observed in proton-proton collisions, which may point to an interpretation in terms of strong jet energy loss in a hot, dense medium.
|
|
|
|
ATLAS Collaboration(Aad, G. et al), Amoros, G., Cabrera Urban, S., Castillo Gimenez, V., Costa, M. J., Escobar, C., et al. (2011). Measurement of underlying event characteristics using charged particles in pp collisions at sqrt(s) = 900 GeV and 7 TeV with the ATLAS detector. Phys. Rev. D, 83(11), 112001–34pp.
Abstract: Measurements of charged particle distributions, sensitive to the underlying event, have been performed with the ATLAS detector at the LHC. The measurements are based on data collected using a minimum-bias trigger to select proton-proton collisions at center-of-mass energies of 900 GeV and 7 TeV. The "underlying event'' is defined as those aspects of a hadronic interaction attributed not to the hard scattering process, but rather to the accompanying interactions of the rest of the proton. Three regions are defined in azimuthal angle with respect to the highest transverse momentum charged particle in the event, such that the region transverse to the dominant momentum-flow is most sensitive to the underlying event. In each of these regions, distributions of the charged particle multiplicity, transverse momentum density, and average p(T) are measured. The data show generally higher underlying event activity than that predicted by Monte Carlo models tuned to pre-LHC data.
|
|
