Andricek, L., Boronat, M., Fuster, J., Garcia, I., Gomis, P., Marinas, C., et al. (2016). Integrated cooling channels in position-sensitive silicon detectors. J. Instrum., 11, P06018–15pp.
Abstract: We present an approach to construct position-sensitive silicon detectors with an integrated cooling circuit. Tests on samples demonstrate that a very modest liquid flow very effectively cool the devices up to a power dissipation of over 10 W/cm(2). The liquid flow is found to have a negligible impact on the mechanical stability. A finite-element simulation predicts the cooling performance to an accuracy of approximately 10%.
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Boronat, M., Marinas, C., Frey, A., Garcia, I., Schwenker, B., Vos, M., et al. (2015). Physical Limitations to the Spatial Resolution of Solid-State Detectors. IEEE Trans. Nucl. Sci., 62(1), 381–386.
Abstract: In this paper we explore the effect of delta-ray emission and fluctuations in the signal deposition on the detection of charged particles in silicon-based detectors. We show that these two effects ultimately limit the resolution that can be achieved by interpolation of the signal in finely segmented position-sensitive solid-state devices.
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Poley, L., Stolzenberg, U., Schwenker, B., Frey, A., Gottlicher, P., Marinas, C., et al. (2021). Mapping the material distribution of a complex structure in an electron beam. J. Instrum., 16(1), P01010–33pp.
Abstract: The simulation and analysis of High Energy Physics experiments require a realistic simulation of the detector material and its distribution. The challenge is to describe all active and passive parts of large scale detectors like ATLAS in terms of their size, position and material composition. The common method for estimating the radiation length by weighing individual components, adding up their contributions and averaging the resulting material distribution over extended structures provides a good general estimate, but can deviate significantly from the material actually present. A method has been developed to assess its material distribution with high spatial resolution using the reconstructed scattering angles and hit positions of high energy electron tracks traversing an object under investigation. The study presented here shows measurements for an extended structure with a highly inhomogeneous material distribution. The structure under investigation is an End-of-Substructure-card prototype designed for the ATLAS Inner Tracker strip tracker – a PCB populated with components of a large range of material budgets and sizes. The measurements presented here summarise requirements for data samples and reconstructed electron tracks for reliable image reconstruction of large scale, inhomogeneous samples, choices of pixel sizes compared to the size of features under investigation as well as a bremsstrahlung correction for high material densities and thicknesses.
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Babeluk, M. et al, & Marinas, C. (2023). CMOS MAPS upgrade for the Belle II Vertex Detector. Nucl. Instrum. Methods Phys. Res. A, 1048, 168015–5pp.
Abstract: The success of the Belle II experiment in Japan relies on the very high instantaneous luminosity, close to 6x1035 cm-2 s-1, expected from the SuperKEKB collider. The corresponding beam conditions at such luminosity levels generate large rates of background particles and creates stringent constraints on the vertex detector, adding to the physics requirements. Current prospects for the occupancy rates in the present vertex detector (VXD) at full luminosity fall close to the acceptable limits and bear large uncertainties. In this context, the Belle II collaboration is considering the possibility to install an upgraded VXD system around 2027 to provide a sufficient safety margin with respect to the expected background rate and possibly enhance tracking and vertexing performance. The VTX collaboration has started the design of a fully pixelated VXD, called VTX, based on fast and highly granular Depleted Monolithic Active Pixel Sensors (DMAPS) integrated on light support structures. The two main technical features of the VTX proposal are the usage of a single sensor type over all the layers of the system and the overall material budget below 2% of radiation length, compared to the current VXD which has two different sensor technologies and about 3% of radiation length. A dedicated sensor (OBELIX), taylored to the specific needs of Belle II, is under development, evolving from the existing TJ-Monopix2 sensor. The time-stamping precision below 100 ns will allow all VTX layers to take part in the track finding strategy contrary to the current situation. The first two detection layers are designed according to a self-supported all-silicon ladder concept, where 4 contiguous sensors are diced out of a wafer, thinned and interconnected with post-processed redistribution layers. The outermost detection layers follow a more conventional approach with a cold plate and carbon fibre support structure, and light flex cables interconnecting the sensors. This document will review the context, technical details and development status of the proposed Belle II VTX.
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Belle-II DEPFET and PXD Collaborations(Wang, B. et al), & Marinas, C. (2022). Operational experience of the Belle II pixel detector. Nucl. Instrum. Methods Phys. Res. A, 1032, 166631–7pp.
Abstract: The Belle II experiment at the SuperKEKB accelerator has started its physics data taking with the full detector setup in March 2019. It aims to collect 40 times more e+e- collision data compared with its predecessor Belle experiment. The Belle II pixel detector (PXD) is based on the Depleted P-channel Field Effect Transistor (DEPFET) technology. The PXD plays an important role in the tracking and vertexing of the Belle II detector. Its two layers are arranged at radii of 14 mm and 22 mm around the interaction point. The sensors are thinned down to 75 μm to minimize multiple scattering, and each module has interconnects and ASICs integrated on the sensor with silicon frames for mechanical support. PXD showed good performance during data taking. It also faces several operational challenges due to the high background level from the SuperKEKB accelerator, such as the damage from beam loss events, the drift in the HV working point due to radiation effect, and the impact of the high background.
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Schreeck, H., Paschen, B., Wieduwilt, P., Ahlburg, P., Andricek, L., Dingfelder, J., et al. (2020). Effects of gamma irradiation on DEPFET pixel sensors for the Belle II experiment. Nucl. Instrum. Methods Phys. Res. A, 959, 163522–9pp.
Abstract: For the Belle II experiment at KEK (Tsukuba, Japan) the KEKB accelerator was upgraded to deliver a 40 times larger instantaneous luminosity than before, which requires an increased radiation hardness of the detector components. As the innermost part of the Belle II detector, the pixel detector (PXD), based on DEPFET (DEpleted P-channel Field Effect Transistor) technology, is most exposed to radiation from the accelerator. An irradiation campaign was performed to verify that the PXD can cope with the expected amount of radiation. We present the results of this measurement campaign in which an X-ray machine was used to irradiate a single PXD half-ladder to a total dose of 266 kGy. The half-ladder is from the same batch as the half-ladders used for Belle II. According to simulations, the total accumulated dose corresponds to 7-10 years of Belle II operation. While individual components have been irradiated before, this campaign is the first full system irradiation. We discuss the effects on the DEPFET sensors, as well as the performance of the front-end electronics. In addition, we present efficiency studies of the half-ladder from beam tests performed before and after the irradiation.
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Andricek, L. et al, Lacasta, C., Marinas, C., & Vos, M. (2011). Intrinsic resolutions of DEPFET detector prototypes measured at beam tests. Nucl. Instrum. Methods Phys. Res. A, 638(1), 24–32.
Abstract: The paper is based on the data of the 2009 DEPFET beam test at CERN SPS. The beam test used beams of pions and electrons with energies between 40 and 120 GeV, and the sensors tested were prototypes with thickness of 450 μm and pixel pitch between 20 and 32 μm. Intrinsic resolutions of the detectors are calculated by disentangling the contributions of measurement errors and multiple scattering in tracking residuals. Properties of the intrinsic resolution estimates and factors that influence them are discussed. For the DEPFET detectors in the beam test, the calculation yields intrinsic resolutions of approximate to 1 μm, with a typical accuracy of 0.1 μm. Bias scan, angle scan, and energy scan are used as example studies to show that the intrinsic resolutions are a useful tool in studies of detector properties. With sufficiently precise telescopes, detailed resolution maps can be constructed and used to study and optimize detector performance.
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Marinas, C., & Vos, M. (2011). The Belle-II DEPFET pixel detector: A step forward in vertexing in the superKEKB flavour factory. Nucl. Instrum. Methods Phys. Res. A, 650(1), 59–63.
Abstract: An upgrade of the successful asymmetric e(+)e(-) collider in KEK (Tsukuba, Japan) is foreseen by the fall of 2013. This new Super Flavor Factory will deliver an increased instantaneous luminosity of up to L = 8 x 10(35) cm(-2) s(-1), 40 times larger than the current KEKB machine. To exploit these new conditions and provide high precision measurements of the decay vertex of the B meson systems, a new silicon vertex detector will be operated in Belle. This new detector will consist of two layers of DEPFET Active Pixel Sensors as close as possible to the interaction point. DEPFET is a field effect transistor, with an additional deep implant underneath the channel's gate, integrated on a completely depleted bulk. This technology offers detection and an in-pixel amplification stage, while keeping low the power consumption. Under these conditions, thin sensors with small pixel size and low intrinsic noise are possible. In this article, an overview of the full system will be described, including the sensor, the front-end electronics and both the mechanical and thermal proposed solutions as well as the expected performance.
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