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Author Poley, L.; Stolzenberg, U.; Schwenker, B.; Frey, A.; Gottlicher, P.; Marinas, C.; Stanitzki, M.; Stelzer, B. doi  openurl
  Title Mapping the material distribution of a complex structure in an electron beam Type Journal Article
  Year 2021 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.  
  Volume 16 Issue 1 Pages P01010 - 33pp  
  Keywords Detector modelling and simulations I (interaction of radiation with matter, interaction of photons with matter, interaction of hadrons with matter, etc); Particle tracking detectors; Detector design and construction technologies and materials  
  Abstract The simulation and analysis of High Energy Physics experiments require a realistic simulation of the detector material and its distribution. The challenge is to describe all active and passive parts of large scale detectors like ATLAS in terms of their size, position and material composition. The common method for estimating the radiation length by weighing individual components, adding up their contributions and averaging the resulting material distribution over extended structures provides a good general estimate, but can deviate significantly from the material actually present. A method has been developed to assess its material distribution with high spatial resolution using the reconstructed scattering angles and hit positions of high energy electron tracks traversing an object under investigation. The study presented here shows measurements for an extended structure with a highly inhomogeneous material distribution. The structure under investigation is an End-of-Substructure-card prototype designed for the ATLAS Inner Tracker strip tracker – a PCB populated with components of a large range of material budgets and sizes. The measurements presented here summarise requirements for data samples and reconstructed electron tracks for reliable image reconstruction of large scale, inhomogeneous samples, choices of pixel sizes compared to the size of features under investigation as well as a bremsstrahlung correction for high material densities and thicknesses.  
  Address [Poley, L.; Stelzer, B.] Simon Fraser Univ, Dept Phys, Univ Dr, Burnaby, BC, Canada, Email: APoley@cern.ch  
  Corporate Author Thesis  
  Publisher Iop Publishing Ltd Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1748-0221 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000608273000010 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 4687  
Permanent link to this record
 

 
Author Babeluk, M. et al; Marinas, C. doi  openurl
  Title CMOS MAPS upgrade for the Belle II Vertex Detector Type Journal Article
  Year 2023 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 1048 Issue Pages 168015 - 5pp  
  Keywords Belle II; VXD; SVD; PXD; VTX; Upgrade; CMOS; DMAPS  
  Abstract The success of the Belle II experiment in Japan relies on the very high instantaneous luminosity, close to 6x1035 cm-2 s-1, expected from the SuperKEKB collider. The corresponding beam conditions at such luminosity levels generate large rates of background particles and creates stringent constraints on the vertex detector, adding to the physics requirements. Current prospects for the occupancy rates in the present vertex detector (VXD) at full luminosity fall close to the acceptable limits and bear large uncertainties. In this context, the Belle II collaboration is considering the possibility to install an upgraded VXD system around 2027 to provide a sufficient safety margin with respect to the expected background rate and possibly enhance tracking and vertexing performance. The VTX collaboration has started the design of a fully pixelated VXD, called VTX, based on fast and highly granular Depleted Monolithic Active Pixel Sensors (DMAPS) integrated on light support structures. The two main technical features of the VTX proposal are the usage of a single sensor type over all the layers of the system and the overall material budget below 2% of radiation length, compared to the current VXD which has two different sensor technologies and about 3% of radiation length. A dedicated sensor (OBELIX), taylored to the specific needs of Belle II, is under development, evolving from the existing TJ-Monopix2 sensor. The time-stamping precision below 100 ns will allow all VTX layers to take part in the track finding strategy contrary to the current situation. The first two detection layers are designed according to a self-supported all-silicon ladder concept, where 4 contiguous sensors are diced out of a wafer, thinned and interconnected with post-processed redistribution layers. The outermost detection layers follow a more conventional approach with a cold plate and carbon fibre support structure, and light flex cables interconnecting the sensors. This document will review the context, technical details and development status of the proposed Belle II VTX.  
  Address [Babeluk, M.; Bergauer, T.; Irmler, C.; Schwanda, C.] Austrian Acad Sci, Inst High Energy Phys, A-1050 Vienna, Austria, Email: christian.wessel@desy.de  
  Corporate Author Thesis  
  Publisher Elsevier Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000990246200001 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 5538  
Permanent link to this record
 

 
Author Belle-II DEPFET and PXD Collaborations (Wang, B. et al); Marinas, C. doi  openurl
  Title Operational experience of the Belle II pixel detector Type Journal Article
  Year 2022 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 1032 Issue Pages 166631 - 7pp  
  Keywords Belle II PXD; DEPFET; Pixel detector; Vertex detector  
  Abstract The Belle II experiment at the SuperKEKB accelerator has started its physics data taking with the full detector setup in March 2019. It aims to collect 40 times more e+e- collision data compared with its predecessor Belle experiment. The Belle II pixel detector (PXD) is based on the Depleted P-channel Field Effect Transistor (DEPFET) technology. The PXD plays an important role in the tracking and vertexing of the Belle II detector. Its two layers are arranged at radii of 14 mm and 22 mm around the interaction point. The sensors are thinned down to 75 μm to minimize multiple scattering, and each module has interconnects and ASICs integrated on the sensor with silicon frames for mechanical support. PXD showed good performance during data taking. It also faces several operational challenges due to the high background level from the SuperKEKB accelerator, such as the damage from beam loss events, the drift in the HV working point due to radiation effect, and the impact of the high background.  
  Address [Alonso, O.; Dieguez, A.] Univ Barcelona, C Marti Franques 1, Barcelona 08028, Spain, Email: wang@mpp.mpg.de  
  Corporate Author Thesis  
  Publisher Elsevier Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000793768200001 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 5227  
Permanent link to this record
 

 
Author Schreeck, H.; Paschen, B.; Wieduwilt, P.; Ahlburg, P.; Andricek, L.; Dingfelder, J.; Frey, A.; Lutticke, F.; Marinas, C.; Richter, R.; Schwenker, B. doi  openurl
  Title Effects of gamma irradiation on DEPFET pixel sensors for the Belle II experiment Type Journal Article
  Year 2020 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 959 Issue Pages 163522 - 9pp  
  Keywords DEPFET; Radiation damage; Particle tracking detectors; Belle II  
  Abstract For the Belle II experiment at KEK (Tsukuba, Japan) the KEKB accelerator was upgraded to deliver a 40 times larger instantaneous luminosity than before, which requires an increased radiation hardness of the detector components. As the innermost part of the Belle II detector, the pixel detector (PXD), based on DEPFET (DEpleted P-channel Field Effect Transistor) technology, is most exposed to radiation from the accelerator. An irradiation campaign was performed to verify that the PXD can cope with the expected amount of radiation. We present the results of this measurement campaign in which an X-ray machine was used to irradiate a single PXD half-ladder to a total dose of 266 kGy. The half-ladder is from the same batch as the half-ladders used for Belle II. According to simulations, the total accumulated dose corresponds to 7-10 years of Belle II operation. While individual components have been irradiated before, this campaign is the first full system irradiation. We discuss the effects on the DEPFET sensors, as well as the performance of the front-end electronics. In addition, we present efficiency studies of the half-ladder from beam tests performed before and after the irradiation.  
  Address [Schreeck, Harrison; Wieduwilt, Philipp; Frey, Ariane; Schwenker, Benjamin] Georg August Univ Gottingen, Phys Inst 2, Friedrich Hund Pl 1, D-37077 Gottingen, Germany, Email: harrison.schreeck@phys.uni-goettingen.de  
  Corporate Author Thesis  
  Publisher Elsevier Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000518368800016 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 4316  
Permanent link to this record
 

 
Author Andricek, L. et al; Lacasta, C.; Marinas, C.; Vos, M. doi  openurl
  Title Intrinsic resolutions of DEPFET detector prototypes measured at beam tests Type Journal Article
  Year 2011 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 638 Issue 1 Pages 24-32  
  Keywords Silicon pixel detector; Detector resolution; Spatial resolution; DEPFET; Beam test  
  Abstract The paper is based on the data of the 2009 DEPFET beam test at CERN SPS. The beam test used beams of pions and electrons with energies between 40 and 120 GeV, and the sensors tested were prototypes with thickness of 450 μm and pixel pitch between 20 and 32 μm. Intrinsic resolutions of the detectors are calculated by disentangling the contributions of measurement errors and multiple scattering in tracking residuals. Properties of the intrinsic resolution estimates and factors that influence them are discussed. For the DEPFET detectors in the beam test, the calculation yields intrinsic resolutions of approximate to 1 μm, with a typical accuracy of 0.1 μm. Bias scan, angle scan, and energy scan are used as example studies to show that the intrinsic resolutions are a useful tool in studies of detector properties. With sufficiently precise telescopes, detailed resolution maps can be constructed and used to study and optimize detector performance.  
  Address [Dolezal, Z.; Drasal, Z.; Kodys, P.; Kvasnicka, P.; Malina, L.; Scheirich, J.] Charles Univ Prague, Fac Math & Phys, Inst Particle & Nucl Phys, CR-18000 Prague, Czech Republic, Email: peter.kodys@mff.cuni.cz  
  Corporate Author Thesis  
  Publisher Elsevier Science Bv Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes ISI:000290082600005 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 618  
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