Abstract: We present the Fixed Center Approximation (FCA) to the Faddeev equations for the (K) over bar NN system with S = 0, including the charge exchange mechanisms in the (K) over bar rescattering. The system appears bound by about 35 MeV and the width, omitting two body absorption, is about 50 MeV. We also evaluate the (K) over bar absorption width in the bound (K) over bar NN system by employing the FCA to account for (K) over bar rescattering on the NN cluster. The width of the states found previously for S = 0 and S = 1 is found now to increase by about 30 MeV due to the (K) over bar NN absorption, to a total value of about 80 MeV.

Abstract: The imaging scanning technique for the characterisation of large volume, highly segmented, HPGe detectors is demonstrated by comparing the measured spatial response of a symmetric AGATA crystal versus the theoretical calculations obtained with the Multi-Geometry Simulation (MGS) code. The signal rise-times measured as a function of the gamma-ray interaction positions, in both coaxial and planar regions of the detection volume, are presented and confronted with the expected behaviour obtained via MGS. The transition in charge carrier transport behaviour as a function of the depth is studied for the region of the complex electric field. In general, a fairly good agreement between theory and experiment is obtained. Only systematic deviations between simulation and measurement are observed in the critical front part of the AGATA detector. They may be ascribed to a non-linear impurity concentration profile of the germanium crystal.

Abstract: Silicon based devices can extend PET-MR and SPECT-MR imaging to applications, where their advantages in performance outweigh benefits of high statistical counts. Silicon is in many ways an excellent detector material with numerous advantages, among others: excellent energy and spatial resolution, mature processing technology, large signal to noise ratio, relatively low price, availability, versatility and malleability. The signal in silicon is also immune to effects of magnetic field at the level normally used in MR devices. Tests in fields up to 7 T were performed in a study to determine effects of magnetic field on positron range in a silicon PET device. The curvature of positron tracks in direction perpendicular to the field's orientation shortens the distance between emission and annihilation point of the positron. The effect can be fully appreciated for a rotation of the sample for a fixed field direction, compressing range in all dimensions. A popular Ga-68 source was used showing a factor of 2 improvement in image noise compared to zero field operation. There was also a little increase in noise as the reconstructed resolution varied between 2.5 and 1.5 mm. A speculative applications can be recognized in both emission modalities, SPECT and PET. Compton camera is a subspecies of SPECT, where a silicon based scatter as a MR compatible part could inserted into the MR bore and the secondary detector could operate in less constrained environment away from the magnet. Introducing a Compton camera also relaxes requirements of the radiotracers used, extending the range of conceivable photon energies beyond 140.5 keV of the Tc-99m. In PET, one could exploit the compressed sub-millimeter range of positrons in the magnetic field. To exploit the advantage, detectors with spatial resolution commensurate to the effect must be used with silicon being an excellent candidate. Measurements performed outside of the MR achieving spatial resolution below 1 mm are reported.