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Author |
BRIKEN Collaboration (Tolosa-Delgado, A. et al); Agramunt, J.; Tain, J.L.; Algora, A.; Domingo-Pardo, C.; Morales, A.I.; Rubio, B. |
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Title  |
Commissioning of the BRIKEN detector for the measurement of very exotic beta-delayed neutron emitters |
Type |
Journal Article |
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Year |
2019 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
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Volume |
925 |
Issue |
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Pages |
133-147 |
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Keywords |
Beta-delayed neutrons; Neutron and beta counters; Analysis methodology; Background correction |
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Abstract |
A new detection system has been installed at the RIKEN Nishina Center (Japan) to investigate decay properties of very neutron-rich nuclei. The setup consists of three main parts: a moderated neutron counter, a detection system sensitive to the implantation and decay of radioactive ions, and gamma-ray detectors. We describe here the setup, the commissioning experiment and some selected results demonstrating its performance for the measurement of half-lives and beta-delayed neutron emission probabilities. The methodology followed in the analysis of the data is described in detail. Particular emphasis is placed on the correction of the accidental neutron background. |
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Address |
[Tolosa-Delgado, A.; Agramunt, J.; Tain, J. L.; Algora, A.; Domingo-Pardo, C.; Morales, A., I; Rubio, B.] CSIC, Inst Fis Corpuscular, E-46980 Paterna, Spain, Email: tain@ific.uv.es |
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Publisher |
Elsevier Science Bv |
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English |
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Series Volume |
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ISSN |
0168-9002 |
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Conference |
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Notes |
WOS:000460539400018 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
3939 |
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Author |
Belle-II DEPFET and PXD Collaboration (Ye, H. et al); Boronat, M.; Esperante, D.; Fuster, J.; Gomis, P.; Lacasta, C.; Vos, M. |
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Title |
Commissioning and performance of the Belle II pixel detector |
Type |
Journal Article |
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Year |
2021 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
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Volume |
987 |
Issue |
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Pages |
164875 - 5pp |
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Keywords |
Belle II; Pixel detector; DEPFET |
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Abstract |
The Belle II experiment at the SuperKEKB energy-asymmetric e(+)e(-) collider has completed a series of substantial upgrades and started collecting data in 2019. The experiment is expected to accumulate a data set of 50 ab(-1) to explore new physics beyond the Standard Model at the intensity frontier. The pixel detector (PXD) of Belle II plays a key role in vertex determination. It has been developed using the DEpleted P-channel Field Effect Transistor (DEPFET) technology, which combines low power consumption in the active pixel area and low intrinsic noise with a very small material budget. In this paper, commissioning and performance of the PXD measured with first collision data are presented. |
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Address |
[Alonso, O.; Dieguez, A.] Univ Barcelona, C Marti Franques 1, Barcelona 08028, Spain, Email: hua.ye@desy.de |
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Elsevier |
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English |
Summary Language |
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Original Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0168-9002 |
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Conference |
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Notes |
WOS:000597154800008 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
4653 |
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Author |
Babeluk, M. et al; Marinas, C. |
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Title |
CMOS MAPS upgrade for the Belle II Vertex Detector |
Type |
Journal Article |
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Year |
2023 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
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Volume |
1048 |
Issue |
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Pages |
168015 - 5pp |
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Keywords |
Belle II; VXD; SVD; PXD; VTX; Upgrade; CMOS; DMAPS |
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Abstract |
The success of the Belle II experiment in Japan relies on the very high instantaneous luminosity, close to 6x1035 cm-2 s-1, expected from the SuperKEKB collider. The corresponding beam conditions at such luminosity levels generate large rates of background particles and creates stringent constraints on the vertex detector, adding to the physics requirements. Current prospects for the occupancy rates in the present vertex detector (VXD) at full luminosity fall close to the acceptable limits and bear large uncertainties. In this context, the Belle II collaboration is considering the possibility to install an upgraded VXD system around 2027 to provide a sufficient safety margin with respect to the expected background rate and possibly enhance tracking and vertexing performance. The VTX collaboration has started the design of a fully pixelated VXD, called VTX, based on fast and highly granular Depleted Monolithic Active Pixel Sensors (DMAPS) integrated on light support structures. The two main technical features of the VTX proposal are the usage of a single sensor type over all the layers of the system and the overall material budget below 2% of radiation length, compared to the current VXD which has two different sensor technologies and about 3% of radiation length. A dedicated sensor (OBELIX), taylored to the specific needs of Belle II, is under development, evolving from the existing TJ-Monopix2 sensor. The time-stamping precision below 100 ns will allow all VTX layers to take part in the track finding strategy contrary to the current situation. The first two detection layers are designed according to a self-supported all-silicon ladder concept, where 4 contiguous sensors are diced out of a wafer, thinned and interconnected with post-processed redistribution layers. The outermost detection layers follow a more conventional approach with a cold plate and carbon fibre support structure, and light flex cables interconnecting the sensors. This document will review the context, technical details and development status of the proposed Belle II VTX. |
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Address |
[Babeluk, M.; Bergauer, T.; Irmler, C.; Schwanda, C.] Austrian Acad Sci, Inst High Energy Phys, A-1050 Vienna, Austria, Email: christian.wessel@desy.de |
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Elsevier |
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English |
Summary Language |
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Series Editor |
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Series Volume |
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ISSN |
0168-9002 |
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Conference |
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Notes |
WOS:000990246200001 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
5538 |
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Author |
Hara, K. et al; Escobar, C.; Garcia, C.; Lacasta, C.; Miñano, M.; Soldevila, U. |
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Title |
Charge collection study with the ATLAS ITk prototype silicon strip sensors ATLAS17LS |
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Journal Article |
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Year |
2020 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
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Volume |
983 |
Issue |
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Pages |
164422 - 6pp |
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Keywords |
ATLAS ITk; Microstrip sensor; Charge collection; Radiation damage |
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Abstract |
The inner tracker of the ATLAS detector is scheduled to be replaced by a completely new silicon-based inner tracker (ITk) for the Phase-II of the CERN LHC (HL-LHC). The silicon strip detector covers the volume 40 < R < 100 cm in the radial and vertical bar z vertical bar <300 cm in the longitudinal directions. The silicon sensors for the detector will be fabricated using the n(+)-on-p 6-inch wafer technology, for a total of 22,000 wafers. Intensive studies were carried out on the final prototype sensors ATLAS17LS fabricated by Hamamatsu Photonics (HPK). The charge collection properties were examined using penetrating Sr-90 beta-rays and the ALIBAVA fast readout system for the miniature sensors of 1 cm xl cm in area. The samples were irradiated by protons in the 27 MeV Birmingham Cyclotron, the 70 MeV CYRIC at Tohoku University, and the 24 GeV CERN-PS, and by neutrons at Ljubljana TAIGA reactor for fluence values up to 2 x 10(15) n(eq)/cm(2). The change in the charge collection with fluence was found to be similar to the previous prototype ATLAS12, and acceptable for the ITk. Sensors with two active thicknesses, 300 μm (standard) and 240 μm (thin), were compared and the difference in the charge collection was observed to be small for bias voltages up to 500 V. Some samples were also irradiated with gamma radiation up to 2 MGy, and the full depletion voltage was found to decrease with the dose. This was caused by the Compton electrons due to the( 60)Co gamma radiation. To summarize, the design of the ATLAS17LS and technology for its fabrication have been verified for implementation in the ITk. We are in the stage of sensor pre-production with the first sensors already delivered in January of 2020. |
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Address |
[Hara, K.] Univ Tsukuba, Inst Pure & Appl Sci, Tsukuba, Ibaraki 3058571, Japan, Email: hara@hep.px.tsukuba.ac.jp |
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Publisher |
Elsevier |
Place of Publication |
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English |
Summary Language |
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Original Title |
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Series Editor |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0168-9002 |
ISBN |
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Conference |
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Notes |
WOS:000581808300002 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
4606 |
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Author |
Latonova, V. et al; Bernabeu, J.; Lacasta, C.; Solaz, C.; Soldevila, U. |
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Title |
Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation |
Type |
Journal Article |
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Year |
2023 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
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Volume |
1050 |
Issue |
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Pages |
168119 - 5pp |
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Keywords |
HL-LHC; ATLAS ITk; Silicon micro-strip sensor; Polysilicon bias resistor; Testchip |
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Abstract |
The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb(-1) means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 center dot 10(15) MeVn(eq)/cm(2) and 0.66MGy, respectively, including a safety factor of 1.5. Radiation hard n(+)-in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n(+) implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. We discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips. |
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Address |
[Latonova, V.; Federicova, P.; Kroll, J.; Kvasnicka, J.; Mikestikova, M.] Acad Sci Czech Republ, Inst Phys, Slovance 2, Prague 8, Czech Republic, Email: vera.latonova@cern.ch |
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Thesis |
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Publisher |
Elsevier |
Place of Publication |
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Language |
English |
Summary Language |
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Original Title |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0168-9002 |
ISBN |
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Medium |
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Area |
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Expedition |
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Conference |
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Notes |
WOS:001035405300001 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
5601 |
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