Abstract: The Advanced GAmma Tracking Array (AGATA) has been installed at the GANIL facility, Caen-France. This setup exploits the stable and radioactive heavy-ions beams delivered by the cyclotron accelerator complex of GANIL. Additionally, it benefits from a large palette of ancillary detectors and spectrometers to address in-beam gamma-ray spectroscopy of exotic nuclei. The set-up has been designed to couple AGATA with a magnetic spectrometer, charged-particle and neutron detectors, scintillators for the detection of high-energy gamma rays and other devices such as a plunger to measure nuclear lifetimes. In this paper, the design and the mechanical characteristics of the set-up are described. Based on simulations, expected performances of the AGATA l pi array are presented.

Abstract: The aim of the Advanced GAmma Tracking Array (AGATA) project is the construction of an array based on the novel concepts of pulse shape analysis and gamma-ray tracking with highly segmented Ge semiconductor detectors. The conceptual design of AGATA and its performance evaluation under different experimental conditions has required the development of a suitable Monte Carlo code. In this article, the description of the code as well as simulation results relevant for AGATA, are presented.

Abstract: A new detection system has been installed at the RIKEN Nishina Center (Japan) to investigate decay properties of very neutron-rich nuclei. The setup consists of three main parts: a moderated neutron counter, a detection system sensitive to the implantation and decay of radioactive ions, and gamma-ray detectors. We describe here the setup, the commissioning experiment and some selected results demonstrating its performance for the measurement of half-lives and beta-delayed neutron emission probabilities. The methodology followed in the analysis of the data is described in detail. Particular emphasis is placed on the correction of the accidental neutron background.

Abstract: The success of the Belle II experiment in Japan relies on the very high instantaneous luminosity, close to 6x1035 cm-2 s-1, expected from the SuperKEKB collider. The corresponding beam conditions at such luminosity levels generate large rates of background particles and creates stringent constraints on the vertex detector, adding to the physics requirements. Current prospects for the occupancy rates in the present vertex detector (VXD) at full luminosity fall close to the acceptable limits and bear large uncertainties. In this context, the Belle II collaboration is considering the possibility to install an upgraded VXD system around 2027 to provide a sufficient safety margin with respect to the expected background rate and possibly enhance tracking and vertexing performance. The VTX collaboration has started the design of a fully pixelated VXD, called VTX, based on fast and highly granular Depleted Monolithic Active Pixel Sensors (DMAPS) integrated on light support structures. The two main technical features of the VTX proposal are the usage of a single sensor type over all the layers of the system and the overall material budget below 2% of radiation length, compared to the current VXD which has two different sensor technologies and about 3% of radiation length. A dedicated sensor (OBELIX), taylored to the specific needs of Belle II, is under development, evolving from the existing TJ-Monopix2 sensor. The time-stamping precision below 100 ns will allow all VTX layers to take part in the track finding strategy contrary to the current situation. The first two detection layers are designed according to a self-supported all-silicon ladder concept, where 4 contiguous sensors are diced out of a wafer, thinned and interconnected with post-processed redistribution layers. The outermost detection layers follow a more conventional approach with a cold plate and carbon fibre support structure, and light flex cables interconnecting the sensors. This document will review the context, technical details and development status of the proposed Belle II VTX.

Abstract: The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb(-1) means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 center dot 10(15) MeVn(eq)/cm(2) and 0.66MGy, respectively, including a safety factor of 1.5. Radiation hard n(+)-in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n(+) implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. We discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips.