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KM3NeT Collaboration(Aiello, S. et al), Barrios-Marti, J., Calvo, D., Coleiro, A., Colomer, M., Gozzini, S. R., et al. (2018). Characterisation of the Hamamatsu photomultipliers for the KM3NeT Neutrino Telescope. J. Instrum., 13, P05035–17pp.
Abstract: The Hamamatsu R12199-023-inch photomultiplier tube is the photodetector chosen for the first phase of the KM3NeT neutrino telescope. About 7000 photomultipliers have been characterised for dark count rate, timing spread and spurious pulses. The quantum efficiency, the gain and the peak-to-valley ratio have also been measured for a sub-sample in order to determine parameter values needed as input to numerical simulations of the detector.
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Viegas, R., Roser, J., Barrientos, L., Borja-Lloret, M., Casaña, J. V., Lopez, J. G., et al. (2023). Characterization of a Compton camera based on the TOFPET2 ASIC. Radiat. Phys. Chem., 202, 110507–11pp.
Abstract: The use of Compton cameras for medical imaging and its interest as a hadron therapy treatment monitoring has increased in the last decade with the development of silicon photomultipliers. MACACOp is a Compton camera prototype designed and assembled at the IRIS group of IFIC-Valencia. This Compton camera is based on monolithic Lanthanum (III) Bromide crystals and silicon photomultipliers, and employs the novel TOFPET2 ASIC as readout electronics. This system emerged as an alternative to MACACO II prototype, with the aim of improving its limited time resolution. To test the performance of the ASIC in a Compton camera setup, the prototype was characterized, both in laboratory and in-beam. A time resolution of 1.5 ns was obtained after time corrections, which improves greatly the performance of the MACACO II. Moreover, the results obtained at high photon energies demonstrate the ability of the system to obtain 1 mm displacements of the reconstructed spots. The results reinforce the potential of the system as a monitoring device for hadron therapy.
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Agramunt, J. et al, Tain, J. L., Albiol, F., Algora, A., Domingo-Pardo, C., Jordan, M. D., et al. (2016). Characterization of a neutron-beta counting system with beta-delayed neutron emitters. Nucl. Instrum. Methods Phys. Res. A, 807, 69–78.
Abstract: A new detection system for the measurement of beta-delayed neutron emission probabilities has been characterized using fission products with well known beta-delayed neutron emission properties. The setup consists of BELEN-20, a 4 pi-neutron counter with twenty He-3 proportional tubes arranged inside a large polyethylene neutron moderator, a thin Si detector for beta counting and a self-triggering digital data acquisition system. The use of delayed-neutron precursors with different neutron emission windows allowed the study of the effect of energy dependency on neutron, beta and beta-neutron rates. The observed effect is well reproduced by Monte Carlo simulations. The impact of this dependency on the accuracy of neutron emission probabilities is discussed. A new accurate value of the neutron emission probability for the important delayed-neutron precursor I-137 was obtained, P-n = 7.76(14)%.
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Nacher, E., Briz, J. A., Nerio, A. N., Perea, A., Tavora, V. G., Tengblad, O., et al. (2024). Characterization of a novel proton-CT scanner based on Silicon and LaBr3(Ce) detectors. Eur. Phys. J. Plus, 139(5), 404–9pp.
Abstract: Treatment planning systems at proton-therapy centres entirely use X-ray computed tomography (CT) as primary imaging technique to infer the proton treatment doses to tumour and healthy tissues. However, proton stopping powers in the body, as derived from X-ray images, suffer from important proton-range uncertainties. In order to reduce this uncertainty in range, one could use proton-CT images instead. The main goal of this work is to test the capabilities of a newly-developed proton-CT scanner, based on the use of a set of tracking detectors and a high energy resolution scintillator for the residual energy of the protons. Different custom-made phantoms were positioned at the field of view of the scanner and were irradiated with protons at the CCB proton-therapy center in Krakow. We measured with the phantoms at different angles and produced sinograms that were used to obtain reconstructed images by Filtered Back-Projection. The obtained images were used to determine the capabilities of our scanner in terms of spatial resolution and proton Relative Stopping Power (RSP) mapping and validate its use as proton-CT scanner. The results show that the scanner can produce medium-high quality images, with spatial resolution better than 2 mm in radiography, below 3 mm in tomography and resolving power in the RSP comparable to other state-of-the-art pCT scanners.
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Latonova, V. et al, Bernabeu, J., Lacasta, C., Solaz, C., & Soldevila, U. (2023). Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation. Nucl. Instrum. Methods Phys. Res. A, 1050, 168119–5pp.
Abstract: The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb(-1) means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 center dot 10(15) MeVn(eq)/cm(2) and 0.66MGy, respectively, including a safety factor of 1.5. Radiation hard n(+)-in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n(+) implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. We discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips.
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