Ullan, M., Benitez, V., Quirion, D., Zabala, M., Pellegrini, G., Lozano, M., et al. (2014). Low-resistance strip sensors for beam-loss event protection. Nucl. Instrum. Methods Phys. Res. A, 765, 252–257.
Abstract: AC coupled silicon strip sensors can be damaged in case of a beam loss due to the possibility of a large charge accumulation in the bulk, developing very high voltages across the coupling capacitors which can destroy them. Punch-through structures are currently used to avoid this problem helping to evacuate the accumulated charge as large voltages are developing. Nevertheless, previous experiments, performed with laser pulses, have shown that these structures can become ineffective in relatively long strips. The large value of the implant resistance can effectively isolate the “far” end of the strip from the punchthrough structure leading to large voltages. We present here our developments to fabricate lowresistance strip sensors to avoid this problem. The deposition of a conducting material in contact with the implants drastically reduces the strip resistance, assuring the effectiveness of the punch-through structures. First devices have been fabricated with this new technology. Initial results with laser tests show the expected reduction in peak voltages on the low resistivity implants. Other aspects of the sensor performance, including the signal formation, are not affected by the new technology.
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Balibrea-Correa, J., Lerendegui-Marco, J., Babiano-Suarez, V., Caballero, L., Calvo, D., Ladarescu, I., et al. (2021). Machine Learning aided 3D-position reconstruction in large LaCl3 crystals. Nucl. Instrum. Methods Phys. Res. A, 1001, 165249–17pp.
Abstract: We investigate five different models to reconstruct the 3D gamma-ray hit coordinates in five large LaCl3(Ce) monolithic crystals optically coupled to pixelated silicon photomultipliers. These scintillators have a base surface of 50 x 50 mm(2) and five different thicknesses, from 10 mm to 30 mm. Four of these models are analytical prescriptions and one is based on a Convolutional Neural Network. Average resolutions close to 1-2 mm fwhm are obtained in the transverse crystal plane for crystal thicknesses between 10 mm and 20 mm using analytical models. For thicker crystals average resolutions of about 3-5 mm fwhm are obtained. Depth of interaction resolutions between 1 mm and 4 mm are achieved depending on the distance of the interaction point to the photosensor surface. We propose a Machine Learning algorithm to correct for linearity distortions and pin-cushion effects. The latter allows one to keep a large field of view of about 70%-80% of the crystal surface, regardless of crystal thickness. This work is aimed at optimizing the performance of the so-called Total Energy Detector with Compton imaging capability (i-TED) for time-of-flight neutron capture cross-section measurements.
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Poley, L., Blue, A., Bloch, I., Buttar, C., Fadeyev, V., Fernandez-Tejero, J., et al. (2019). Mapping the depleted area of silicon diodes using a micro-focused X-ray beam. J. Instrum., 14, P03024–14pp.
Abstract: For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker (ITk). The ITk will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of 500V to maintain a low noise and power dissipation. In order to minimise sensor leakage currents, particularly in the high-radiation environment inside the ATLAS detector, sensors are foreseen to be operated at low temperatures and to be manufactured from wafers with a high bulk resistivity of several k Omega.cm. Simulations showed the electric field inside sensors with high bulk resistivity to extend towards the sensor edge, which could lead to increased surface currents for narrow dicing edges. In order to map the electric field inside biased silicon sensors with high bulk resistivity, three diodes from ATLAS silicon strip sensor prototype wafers were studied with a monochromatic, micro-focused X-ray beam at the Diamond Light Source (Didcot, U.K.). For all devices under investigation, the electric field inside the diode was mapped and its dependence on the applied bias voltage was studied.
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Poley, L., Stolzenberg, U., Schwenker, B., Frey, A., Gottlicher, P., Marinas, C., et al. (2021). Mapping the material distribution of a complex structure in an electron beam. J. Instrum., 16(1), P01010–33pp.
Abstract: The simulation and analysis of High Energy Physics experiments require a realistic simulation of the detector material and its distribution. The challenge is to describe all active and passive parts of large scale detectors like ATLAS in terms of their size, position and material composition. The common method for estimating the radiation length by weighing individual components, adding up their contributions and averaging the resulting material distribution over extended structures provides a good general estimate, but can deviate significantly from the material actually present. A method has been developed to assess its material distribution with high spatial resolution using the reconstructed scattering angles and hit positions of high energy electron tracks traversing an object under investigation. The study presented here shows measurements for an extended structure with a highly inhomogeneous material distribution. The structure under investigation is an End-of-Substructure-card prototype designed for the ATLAS Inner Tracker strip tracker – a PCB populated with components of a large range of material budgets and sizes. The measurements presented here summarise requirements for data samples and reconstructed electron tracks for reliable image reconstruction of large scale, inhomogeneous samples, choices of pixel sizes compared to the size of features under investigation as well as a bremsstrahlung correction for high material densities and thicknesses.
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Natochii, A. et al, & Marinas, C. (2023). Measured and projected beam backgrounds in the Belle II experiment at the SuperKEKB collider. Nucl. Instrum. Methods Phys. Res. A, 1055, 168550–21pp.
Abstract: The Belle II experiment at the SuperKEKB electron-positron collider aims to collect an unprecedented data set of 50 ab-1 to study CP-violation in the B-meson system and to search for Physics beyond the Standard Model. SuperKEKB is already the world's highest-luminosity collider. In order to collect the planned data set within approximately one decade, the target is to reach a peak luminosity of 6 x 1035 cm-2 s-1by further increasing the beam currents and reducing the beam size at the interaction point by squeezing the betatron function down to betay* = 0.3 mm. To ensure detector longevity and maintain good reconstruction performance, beam backgrounds must remain well controlled. We report on current background rates in Belle II and compare these against simulation. We find that a number of recent refinements have significantly improved the background simulation accuracy. Finally, we estimate the safety margins going forward. We predict that backgrounds should remain high but acceptable until a luminosity of at least 2.8 x 1035 cm-2 s-1is reached for betay* = 0.6 mm. At this point, the most vulnerable Belle II detectors, the Time-of-Propagation (TOP) particle identification system and the Central Drift Chamber (CDC), have predicted background hit rates from single-beam and luminosity backgrounds that add up to approximately half of the maximum acceptable rates.
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