Real, D., Calvo, D., Zornoza, J. D., Manzaneda, M., Gozzini, R., Ricolfe-Viala, C., et al. (2024). Fast Coincidence Filter for Silicon Photomultiplier Dark Count Rate Rejection. Sensors, 24(7), 2084–12pp.
Abstract: Silicon Photomultipliers find applications across various fields. One potential Silicon Photomultiplier application domain is neutrino telescopes, where they may enhance the angular resolution. However, the elevated dark count rate associated with Silicon Photomultipliers represents a significant challenge to their widespread utilization. To address this issue, it is proposed to use Silicon Photomultipliers and Photomultiplier Tubes together. The Photomultiplier Tube signals serve as a trigger to mitigate the dark count rate, thereby preventing undue saturation of the available bandwidth. This paper presents an investigation into a fast and resource-efficient method for filtering the Silicon Photomultiplier dark count rate. A low-resource and fast coincident filter has been developed, which removes the Silicon Photomultiplier dark count rate by using as a trigger the Photomultiplier Tube input signals. The architecture of the coincidence filter, together with the first results obtained, which validate the effectiveness of this method, is presented.
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Babiano, V., Balibrea, J., Caballero, L., Calvo, D., Ladarescu, I., Mira Prats, S., et al. (2020). First i-TED demonstrator: A Compton imager with Dynamic Electronic Collimation. Nucl. Instrum. Methods Phys. Res. A, 953, 163228–9pp.
Abstract: i-TED consists of both a total energy detector and a Compton camera primarily intended for the measurement of neutron capture cross sections by means of the simultaneous combination of neutron time-of-flight (TOF) and gamma-ray imaging techniques. TOF allows one to obtain a neutron-energy differential capture yield, whereas the imaging capability is intended for the discrimination of radiative background sources, that have a spatial origin different from that of the capture sample under investigation. A distinctive feature of i-TED is the embedded Dynamic Electronic Collimation (DEC) concept, which allows for a trade-off between efficiency and image resolution. Here we report on some general design considerations and first performance characterization measurements made with an i-TED demonstrator in order to explore its gamma-ray detection and imaging capabilities.
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Barrientos, L., Borja-Lloret, M., Casaña, J. V., Dendooven, P., Garcia Lopez, J. G., Hueso-Gonzalez, F., et al. (2024). Gamma-ray sources imaging and test-beam results with MACACO III Compton camera. Phys. Medica, 117, 103199–10pp.
Abstract: Hadron therapy is a radiotherapy modality which offers a precise energy deposition to the tumors and a dose reduction to healthy tissue as compared to conventional methods. However, methods for real-time monitoring are required to ensure that the radiation dose is deposited on the target. The IRIS group of IFIC-Valencia developed a Compton camera prototype for this purpose, intending to image the Prompt Gammas emitted by the tissue during irradiation. The system detectors are composed of Lanthanum (III) bromide scintillator crystals coupled to silicon photomultipliers. After an initial characterization in the laboratory, in order to assess the system capabilities for future experiments in proton therapy centers, different tests were carried out in two facilities: PARTREC (Groningen, The Netherlands) and the CNA cyclotron (Sevilla, Spain). Characterization studies performed at PARTREC indicated that the detectors linearity was improved with respect to the previous version and an energy resolution of 5.2 % FWHM at 511 keV was achieved. Moreover, the imaging capabilities of the system were evaluated with a line source of 68Ge and a point-like source of 241Am-9Be. Images at 4.439 MeV were obtained from irradiation of a graphite target with an 18 MeV proton beam at CNA, to perform a study of the system potential to detect shifts at different intensities. In this sense, the system was able to distinguish 1 mm variations in the target position at different beam current intensities for measurement times of 1800 and 600 s.
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Fernandez-Tejero, J. et al, & Soldevila, U. (2020). Humidity sensitivity of large area silicon sensors: Study and implications. Nucl. Instrum. Methods Phys. Res. A, 978, 164406–6pp.
Abstract: The production of large area sensors is one of the main challenges that the ATLAS collaboration faces for the new Inner-Tracker full-silicon detector. During the prototype fabrication phase for the High Luminosity Large Hadron Collider upgrade, several ATLAS institutes observed indications of humidity sensitivity of large area sensors, even at relative humidities well below the dew point. Specifically, prototype Barrel and End-Cap silicon strip sensors fabricated in 6-inch wafers manifest a prompt decrease of the breakdown voltage when operating under high relative humidity, adversely affecting the performance of the sensors. In addition to the investigation of these prototype sensors, a specific fabrication batch with special passivation is also studied, allowing for a deeper understanding of the responsible mechanisms. This work presents an extensive study of this behaviour on large area sensors. The locations of the hotspots at the breakdown voltage at high humidity are revealed using different infrared thermography techniques. Several palliative treatments are attempted, proving the influence of sensor cleaning methods, as well as baking, on the device performance, but no improvement on the humidity sensitivity was achieved. Furthermore, a study of the incidence of the sensitivity in different batches is also presented, introducing a hypothesis of the origins of the humidity sensitivity associated to the sensor edge design, together with passivation thickness and conformity. Several actions to be taken during sensor production and assembly are extracted from this study, in order to minimize the impact of humidity sensitivity on the performance of large area silicon sensors for High Energy Physics experiments.
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Andricek, L. et al, Lacasta, C., Marinas, C., & Vos, M. (2011). Intrinsic resolutions of DEPFET detector prototypes measured at beam tests. Nucl. Instrum. Methods Phys. Res. A, 638(1), 24–32.
Abstract: The paper is based on the data of the 2009 DEPFET beam test at CERN SPS. The beam test used beams of pions and electrons with energies between 40 and 120 GeV, and the sensors tested were prototypes with thickness of 450 μm and pixel pitch between 20 and 32 μm. Intrinsic resolutions of the detectors are calculated by disentangling the contributions of measurement errors and multiple scattering in tracking residuals. Properties of the intrinsic resolution estimates and factors that influence them are discussed. For the DEPFET detectors in the beam test, the calculation yields intrinsic resolutions of approximate to 1 μm, with a typical accuracy of 0.1 μm. Bias scan, angle scan, and energy scan are used as example studies to show that the intrinsic resolutions are a useful tool in studies of detector properties. With sufficiently precise telescopes, detailed resolution maps can be constructed and used to study and optimize detector performance.
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Ullan, M., Benitez, V., Quirion, D., Zabala, M., Pellegrini, G., Lozano, M., et al. (2014). Low-resistance strip sensors for beam-loss event protection. Nucl. Instrum. Methods Phys. Res. A, 765, 252–257.
Abstract: AC coupled silicon strip sensors can be damaged in case of a beam loss due to the possibility of a large charge accumulation in the bulk, developing very high voltages across the coupling capacitors which can destroy them. Punch-through structures are currently used to avoid this problem helping to evacuate the accumulated charge as large voltages are developing. Nevertheless, previous experiments, performed with laser pulses, have shown that these structures can become ineffective in relatively long strips. The large value of the implant resistance can effectively isolate the “far” end of the strip from the punchthrough structure leading to large voltages. We present here our developments to fabricate lowresistance strip sensors to avoid this problem. The deposition of a conducting material in contact with the implants drastically reduces the strip resistance, assuring the effectiveness of the punch-through structures. First devices have been fabricated with this new technology. Initial results with laser tests show the expected reduction in peak voltages on the low resistivity implants. Other aspects of the sensor performance, including the signal formation, are not affected by the new technology.
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Barrientos, L., Borja-Lloret, M., Etxebeste, A., Muñoz, E., Oliver, J. F., Ros, A., et al. (2021). Performance evaluation of MACACO II Compton camera. Nucl. Instrum. Methods Phys. Res. A, 1014, 165702–7pp.
Abstract: The IRIS group at IFIC-Valencia has developed a second version of a Compton camera prototype for hadron therapy treatment monitoring, with the aim of improving the performance with respect to its predecessor. The system is composed of three Lanthanum (III) bromide (LaBr3) crystals coupled to silicon photomultipliers (SiPMs). The detector energy resolution has been improved to 5.6% FWHM at 511 keV and an angular resolution of 8.0 degrees has been obtained. Images of a Na-22 point-like source have been reconstructed selecting two and three interaction events. Moreover, the experimental data have been reproduced with Monte Carlo simulations using a Compton camera module (CCMod) in GATE v8.2 obtaining a good correlation.
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Muñoz, E., Barrio, J., Etxebeste, A., Ortega, P. G., Lacasta, C., Oliver, J. F., et al. (2017). Performance evaluation of MACACO: a multilayer Compton camera. Phys. Med. Biol., 62(18), 7321–7341.
Abstract: Compton imaging devices have been proposed and studied for a wide range of applications. We have developed a Compton camera prototype which can be operated with two or three detector layers based on monolithic lanthanum bromide (LaBr3) crystals coupled to silicon photomultipliers (SiPMs), to be used for proton range verification in hadron therapy. In this work, we present the results obtained with our prototype in laboratory tests with radioactive sources and in simulation studies. Images of a Na-22 and an Y-88 radioactive sources have been successfully reconstructed. The full width half maximum of the reconstructed images is below 4 mm for a Na-22 source at a distance of 5 cm.
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Capra, S., Mengoni, D., Dueñas, J. A., John, P. R., Gadea, A., Aliaga, R. J., et al. (2019). Performance of the new integrated front-end electronics of the TRACE array commissioned with an early silicon detector prototype. Nucl. Instrum. Methods Phys. Res. A, 935, 178–184.
Abstract: The spectroscopic performances of the new integrated ASIC (Application-Specific Integrated Circuit) preamplifiers for highly segmented silicon detectors have been evaluated with an early silicon detector prototype of the TRacking Array for light Charged Ejectiles (TRACE). The ASICS were mounted on a custom-designed PCB (Printed Circuit Board) and the detector plugged on it. Energy resolution tests, performed on the same detector before and after irradiation, yielded a resolution of 21 keV and 33 keV FWHM respectively. The output signals were acquired with an array of commercial 100-MHz 14-bit digitizers. The preamplifier chip is equipped with an innovative Fast-Reset device that has two functions: it reduces dramatically the dead time of the preamplifier in case of saturation (from milliseconds to microseconds) and extends the spectroscopic dynamic range of the preamplifier by more than one order of magnitude. Other key points of the device are the low noise and the wide bandwidth.
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Boronat, M., Marinas, C., Frey, A., Garcia, I., Schwenker, B., Vos, M., et al. (2015). Physical Limitations to the Spatial Resolution of Solid-State Detectors. IEEE Trans. Nucl. Sci., 62(1), 381–386.
Abstract: In this paper we explore the effect of delta-ray emission and fluctuations in the signal deposition on the detection of charged particles in silicon-based detectors. We show that these two effects ultimately limit the resolution that can be achieved by interpolation of the signal in finely segmented position-sensitive solid-state devices.
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