Abstract: An inclusive search for a new-physics signature of lepton-jet resonances has been performed by the ATLAS experiment. Scalar leptoquarks, pair-produced in pp collisions at root s = 13 TeV at the large hadron collider, have been considered. An integrated luminosity of 3.2 fb(-1), corresponding to the full 2015 dataset was used. First (second) generation leptoquarks were sought in events with two electrons (muons) and two or more jets. The observed event yield in each channel is consistent with Standard Model background expectations. The observed (expected) lower limits on the leptoquark mass at 95% confidence level are 1100 and 1050 GeV (1160 and 1040 GeV) for first and second generation leptoquarks, respectively, assuming a branching ratio into a charged lepton and a quark of 100%. Upper limits on the aforementioned branching ratio are also given as a function of leptoquark mass. Compared with the results of earlier ATLAS searches, the sensitivity is increased for leptoquark masses above 860 GeV, and the observed exclusion limits confirm and extend the published results.

Abstract: A search for a heavy, CP-odd Higgs boson, A, decaying into a Z boson and a 125 GeV Higgs boson, h, with the ATLAS detector at the LHC is presented. The search uses proton-proton collision data at a centre-of-mass energy of 8 TeV corresponding to an integrated luminosity of 20.3 fb(-1). Decays of CP-even h bosons to tau tau or bb pairs with the Z boson decaying to electron or muon pairs are considered, as well as h -> bb decays with the Z boson decaying to neutrinos. No evidence for the production of an A boson in these channels is found and the 95% confidence level upper limits derived for sigma(gg -> A) x BR(A -> Zh) x BR(h -> f (f) over bar) are 0.098-0.013 pb for f = tau and 0.57-0.014 pb for f = b in a range of m(A) = 220-1000 GeV. The results are combined and interpreted in the context of two-Higgs-doublet models.

Abstract: AC coupled silicon strip sensors can be damaged in case of a beam loss due to the possibility of a large charge accumulation in the bulk, developing very high voltages across the coupling capacitors which can destroy them. Punch-through structures are currently used to avoid this problem helping to evacuate the accumulated charge as large voltages are developing. Nevertheless, previous experiments, performed with laser pulses, have shown that these structures can become ineffective in relatively long strips. The large value of the implant resistance can effectively isolate the “far” end of the strip from the punchthrough structure leading to large voltages. We present here our developments to fabricate lowresistance strip sensors to avoid this problem. The deposition of a conducting material in contact with the implants drastically reduces the strip resistance, assuring the effectiveness of the punch-through structures. First devices have been fabricated with this new technology. Initial results with laser tests show the expected reduction in peak voltages on the low resistivity implants. Other aspects of the sensor performance, including the signal formation, are not affected by the new technology.