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Bach, E. et al, Bernabeu, J., Lacasta, C., Solaz, C., & Soldevila, U. (2024). Analysis of the quality assurance results from the initial part of production of the ATLAS18 ITK strip sensors. Nucl. Instrum. Methods Phys. Res. A, 1064, 169435–8pp.
Abstract: The production of strip sensors for the ATLAS Inner Tracker (ITk) started in 2021. Since then, a Quality Assurance (QA) program has been carried out continuously, by using specific test structures, in parallel to the Quality Control (QC) inspection of the sensors. The QA program consists of monitoring sensor-specific characteristics and the technological process variability, before and after the irradiation with gammas, neutrons, and protons. After two years, half of the full production volume has been reached and we present an analysis of the parameters measured as part of the QA process. The main devices used for QA purposes are miniature strip sensors, monitor diodes, and the ATLAS test chip, which contains several test structures. Such devices are tested by several sites across the collaboration depending on the type of samples (non-irradiated components or irradiated with protons, neutrons, or gammas). The parameters extracted from the tests are then uploaded to a database and analyzed by Python scripts. These parameters are mainly examined through histograms and timeevolution plots to obtain parameter distributions, production trends, and meaningful parameter-to-parameter correlations. The purpose of this analysis is to identify possible deviations in the fabrication or the sensor quality, changes in the behavior of the test equipment at different test sites, or possible variability in the irradiation processes. The conclusions extracted from the QA program have allowed test optimization, establishment of control limits for the parameters, and a better understanding of device properties and fabrication trends. In addition, any abnormal results prompt immediate feedback to a vendor.
Keywords: Silicon strip sensors; Parameter analysis
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Real, D., Calvo, D., Zornoza, J. D., Manzaneda, M., Gozzini, R., Ricolfe-Viala, C., et al. (2024). Fast Coincidence Filter for Silicon Photomultiplier Dark Count Rate Rejection. Sensors, 24(7), 2084–12pp.
Abstract: Silicon Photomultipliers find applications across various fields. One potential Silicon Photomultiplier application domain is neutrino telescopes, where they may enhance the angular resolution. However, the elevated dark count rate associated with Silicon Photomultipliers represents a significant challenge to their widespread utilization. To address this issue, it is proposed to use Silicon Photomultipliers and Photomultiplier Tubes together. The Photomultiplier Tube signals serve as a trigger to mitigate the dark count rate, thereby preventing undue saturation of the available bandwidth. This paper presents an investigation into a fast and resource-efficient method for filtering the Silicon Photomultiplier dark count rate. A low-resource and fast coincident filter has been developed, which removes the Silicon Photomultiplier dark count rate by using as a trigger the Photomultiplier Tube input signals. The architecture of the coincidence filter, together with the first results obtained, which validate the effectiveness of this method, is presented.
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Barrientos, L., Borja-Lloret, M., Casaña, J. V., Dendooven, P., Garcia Lopez, J. G., Hueso-Gonzalez, F., et al. (2024). Gamma-ray sources imaging and test-beam results with MACACO III Compton camera. Phys. Medica, 117, 103199–10pp.
Abstract: Hadron therapy is a radiotherapy modality which offers a precise energy deposition to the tumors and a dose reduction to healthy tissue as compared to conventional methods. However, methods for real-time monitoring are required to ensure that the radiation dose is deposited on the target. The IRIS group of IFIC-Valencia developed a Compton camera prototype for this purpose, intending to image the Prompt Gammas emitted by the tissue during irradiation. The system detectors are composed of Lanthanum (III) bromide scintillator crystals coupled to silicon photomultipliers. After an initial characterization in the laboratory, in order to assess the system capabilities for future experiments in proton therapy centers, different tests were carried out in two facilities: PARTREC (Groningen, The Netherlands) and the CNA cyclotron (Sevilla, Spain). Characterization studies performed at PARTREC indicated that the detectors linearity was improved with respect to the previous version and an energy resolution of 5.2 % FWHM at 511 keV was achieved. Moreover, the imaging capabilities of the system were evaluated with a line source of 68Ge and a point-like source of 241Am-9Be. Images at 4.439 MeV were obtained from irradiation of a graphite target with an 18 MeV proton beam at CNA, to perform a study of the system potential to detect shifts at different intensities. In this sense, the system was able to distinguish 1 mm variations in the target position at different beam current intensities for measurement times of 1800 and 600 s.
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Latonova, V. et al, Bernabeu, J., Lacasta, C., Solaz, C., & Soldevila, U. (2023). Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation. Nucl. Instrum. Methods Phys. Res. A, 1050, 168119–5pp.
Abstract: The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb(-1) means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 center dot 10(15) MeVn(eq)/cm(2) and 0.66MGy, respectively, including a safety factor of 1.5. Radiation hard n(+)-in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n(+) implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. We discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips.
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Real, D., & Calvo, D. (2023). Silicon Photomultipliers for Neutrino Telescopes. Universe, 9(7), 326–14pp.
Abstract: Neutrino astronomy has opened a new window to the extreme Universe, entering into a fruitful era built upon the success of neutrino telescopes, which have already given a new step forward in this novel and growing field by the first observation of steady point-like sources already achieved by IceCube. Neutrino telescopes equipped with Silicon PhotoMultipliers (SiPMs) will significantly increase in number, because of their excellent time resolution and the angular resolution, and will be in better condition to detect more steady sources as well as the unexpected. The use of SiPMs represents a challenge to the acquisition electronics because of the fast signals as well as the high levels of dark noise produced by SiPMs. The acquisition electronics need to include a noise rejection scheme by implementing a coincidence filter between channels. This work discusses the advantages and disadvantages of using SiPMs for the next generation of neutrino telescopes, focusing on the possible developments that could help for their adoption in the near future.
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