Brown, J. M. C., Dimmock, M. R., Gillam, J. E., & Paganin, D. M. (2014). A low energy bound atomic electron Compton scattering model for Geant4. Nucl. Instrum. Methods Phys. Res. B, 338, 77–88.
Abstract: A two-body fully relativistic three-dimensional scattering framework has been utilised to develop an alternative Compton scattering computational model to those adapted from Ribberfors' work for Monte Carlo modelling of Compton scattering. Using a theoretical foundation that ensures the conservation of energy and momentum in the relativistic impulse approximation, this new model, the Monash University Compton scattering model, develops energy and directional algorithms for both the scattered photon and ejected Compton electron from first principles. The Monash University Compton scattering model was developed to address the limitation of the Compton electron directionality algorithms of other computational models adapted from Ribberfors' work. Here the development of the Monash University Compton scattering model, including its implementation in a Geant4 low energy electromagnetic physics class, G4LowEPComptonModel, is outlined. Assessment of the performance of G4LowEPComptonModel was undertaken in two steps: (1) comparison with respect to the two standard Compton scattering classes of Geant4 version 9.5, G4LivermoreComptonModel and G4PenelopeComptonModel, and (2) experimental comparison with respect to Compton electron kinetic energy spectra obtained from the Compton scattering of 662 key photons off the K-shell of gold. Both studies illustrate that the Monash University Compton scattering model, and in turn G4LowEPComptonModel, is a viable replacement for the majority of computational models that have been adapted from Ribberfors' work. It was also shown that the Monash University Compton scattering model is able to reproduce the Compton scattering triply differential cross-section Compton electron kinetic energy spectra of 662 keV photons K-shell scattering off of gold to within experimental uncertainty.
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Scandale, W. et al, & Lari, L. (2014). Deflection of high energy protons by multiple volume reflections in a modified multi-strip silicon deflector. Nucl. Instrum. Methods Phys. Res. B, 338, 108–111.
Abstract: The effect of multiple volume reflections in one crystal was observed in each of several bent silicon strips for 400 GeV/c protons. This considerably increased the particle deflections. Some particles were also deflected due to channeling in one of the subsequent strips. As a result, the incident beam was strongly spread because of opposite directions of the deflections. A modified multi-strip deflector produced by periodic grooves on the surface of a thick silicon plate was used for these measurements. This technique provides perfect mutual alignment between crystal strips. Such multi-strip deflector may be effective for collider beam halo collimation and a study is planned at the CERN SPS circulating beam.
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Carrasco, N., Deuzeman, A., Dimopoulos, P., Frezzotti, R., Gimenez, V., Herdoiza, G., et al. (2014). Up, down, strange and charm quark masses with N-f=2+1+1 twisted mass lattice QCD. Nucl. Phys. B, 887, 19–68.
Abstract: We present a lattice QCD calculation of the up, down, strange and charm quark masses performed using the gauge configurations produced by the European Twisted Mass Collaboration with N-f = 2 + 1 + 1 dynamical quarks, which include in the sea, besides two light mass degenerate quarks, also the strange and charm quarks with masses close to their physical values. The simulations are based on a unitary setup for the two light quarks and on a mixed action approach for the strange and charm quarks. The analysis uses data at three values of the lattice spacing and pion masses in the range 210-450 MeV, allowing for accurate continuum limit and controlled chiral extrapolation. The quark mass renormalization is carried out non-perturbatively using the RI'-MOM method. The results for the quark masses converted to the (MS) over bar scheme are: m(ud) (2 GeV) = 3.70(17) MeV, m(s)(2 GeV) = 99.6(4.3) MeV and m(c)(m(c)) = 1.348(46) GeV. We obtain also the quark mass ratios m(s)/m(ud) = 26.66(32) and m(c)/m(s) = 11.62(16). By studying the mass splitting between the neutral and charged kaons and using available lattice results for the electromagnetic contributions, we evaluate m(u)/m(d) = 0.470(56), leading to m(u) = 2.36(24) MeV and m(d) = 5.03(26) MeV.
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Unno, Y. et al, Garcia, C., Jimenez, J., Lacasta, C., Marti-Garcia, S., & Soldevila, U. (2014). Development of n(+) -in-p large-area silicon microstrip sensors for very high radiation environments-ATLAS12 design and initial results. Nucl. Instrum. Methods Phys. Res. A, 765, 80–90.
Abstract: We have been developing a novel radiation tolerant n(+)-in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float zone wafers, where large area strip sensor designs are laid out together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 pm and slim edge space of 450 pm, a gated punch-through protection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers.
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Ullan, M., Benitez, V., Quirion, D., Zabala, M., Pellegrini, G., Lozano, M., et al. (2014). Low-resistance strip sensors for beam-loss event protection. Nucl. Instrum. Methods Phys. Res. A, 765, 252–257.
Abstract: AC coupled silicon strip sensors can be damaged in case of a beam loss due to the possibility of a large charge accumulation in the bulk, developing very high voltages across the coupling capacitors which can destroy them. Punch-through structures are currently used to avoid this problem helping to evacuate the accumulated charge as large voltages are developing. Nevertheless, previous experiments, performed with laser pulses, have shown that these structures can become ineffective in relatively long strips. The large value of the implant resistance can effectively isolate the “far” end of the strip from the punchthrough structure leading to large voltages. We present here our developments to fabricate lowresistance strip sensors to avoid this problem. The deposition of a conducting material in contact with the implants drastically reduces the strip resistance, assuring the effectiveness of the punch-through structures. First devices have been fabricated with this new technology. Initial results with laser tests show the expected reduction in peak voltages on the low resistivity implants. Other aspects of the sensor performance, including the signal formation, are not affected by the new technology.
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