toggle visibility Search & Display Options

Select All    Deselect All
 |   | 
Details
   print
  Records Links
Author Poley, L. et al; Bernabeu, J.; Civera, J.V.; Lacasta, C.; Leon, P.; Platero, A.; Platero, V; Solaz, C.; Soldevila, U.; Vidal, G. url  doi
openurl 
  Title The ABC130 barrel module prototyping programme for the ATLAS strip tracker Type Journal Article
  Year 2020 Publication (up) Journal of Instrumentation Abbreviated Journal J. Instrum.  
  Volume 15 Issue 9 Pages P09004 - 78pp  
  Keywords Detector design and construction technologies and materials; Si microstrip and pad detectors; Radiation-hard detectors; Front-end electronics for detector readout  
  Abstract For the Phase-II Upgrade of the ATLAS Detector [1], its Inner Detector, consisting of silicon pixel, silicon strip and transition radiation sub-detectors, will be replaced with an all new 100% silicon tracker, composed of a pixel tracker at inner radii and a strip tracker at outer radii. The future ATLAS strip tracker will include 11,000 silicon sensor modules in the central region (barrel) and 7,000 modules in the forward region (end-caps), which are foreseen to be constructed over a period of 3.5 years. The construction of each module consists of a series of assembly and quality control steps, which were engineered to be identical for all production sites. In order to develop the tooling and procedures for assembly and testing of these modules, two series of major prototyping programs were conducted: an early program using readout chips designed using a 250 nm fabrication process (ABCN-250) [2, 3] and a subsequent program using a follow-up chip set made using 130 nm processing (ABC130 and HCC130 chips). This second generation of readout chips was used for an extensive prototyping program that produced around 100 barrel-type modules and contributed significantly to the development of the final module layout. This paper gives an overview of the components used in ABC130 barrel modules, their assembly procedure and findings resulting from their tests.  
  Address [Poley, L.; Anderssen, E.; Ciocio, A.; Cornell, E.; Haber, C.; Haugen, T. E.; Heim, T.; Johnson, T. A.; Krizka, K.; Labitan, C.; Li, B.; Li, C.; MacFadyen, R.; Mladina, E.; Ottino, G.; Sanethavong, P.; Santpur, S. Neha; Witharm, R.] Lawrence Berkeley Natl Lab, Cyclotron Rd, Berkeley, CA 94720 USA, Email: APoley@cern.ch  
  Corporate Author Thesis  
  Publisher Iop Publishing Ltd Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1748-0221 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000577273400004 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 4572  
Permanent link to this record
 

 
Author Unno, Y. et al; Bernabeu, J.; Lacasta, C.; Solaz, C.; Soldevila, U. doi  openurl
  Title Specifications and pre-production of n plus -in-p large-format strip sensors fabricated in 6-inch silicon wafers, ATLAS18, for the Inner Tracker of the ATLAS Detector for High-Luminosity Large Hadron Collider Type Journal Article
  Year 2023 Publication (up) Journal of Instrumentation Abbreviated Journal J. Instrum.  
  Volume 18 Issue 3 Pages T03008 - 29pp  
  Keywords Particle tracking detectors (Solid-state detectors); Radiation-hard detectors; Si microstrip and pad detectors  
  Abstract The ATLAS experiment is constructing new all-silicon inner tracking system for HL-LHC. The strip detectors cover the radial extent of 40 to 100 cm. A new approach is adopted to use p-type silicon material, making the readout in n+-strips, so-called n+-in-p sensors. This allows for enhanced radiation tolerance against an order of magnitude higher particle fluence compared to the LHC. To cope with varying hit rates and occupancies as a function of radial distance, there are two barrel sensor types, the short strips (SS) for the inner 2 and the long strips (LS) for the outer 2 barrel cylinders, respectively. The barrel sensors exhibit a square, 9.8 x 9.8 cm2, geometry, the largest possible sensor area from a 6-inch wafer. The strips are laid out in parallel with a strip pitch of 75.5 μm and 4 or 2 rows of strip segments. The strips are AC-coupled and biased via polysilicon resistors. The endcap sensors employ a “stereo-annulus” geometry exhibiting a skewed-trapezoid shapes with circular edges. They are designed in 6 unique shapes, R0 to R5, corresponding to progressively increasing radial extents and which allows them to fit within the petal geometry and the 6-inch wafer maximally. The strips are in fan-out geometry with an in-built rotation angle, with a mean pitch of approximately 75 μm and 4 or 2 rows of strip segments. The eight sensor types are labeled as ATLAS18xx where xx stands for SS, LS, and R0 to R5. According to the mechanical and electrical specifications, CAD files for wafer processing were laid out, following the successful designs of prototype barrel and endcap sensors, together with a number of optimizations. A pre-production was carried out prior to the full production of the wafers. The quality of the sensors is reviewed and judged excellent through the test results carried out by vendor. These sensors are used for establishing acceptance procedures and to evaluate their performance in the ATLAS collaboration, and subsequently for pre-production of strip modules and stave and petal structures.  
  Address [Allport, P. P.; Chisholm, A.; George, W.; Gonella, L.; Kopsalis, I.; Lomas, J.] Univ Birmingham, Sch Phys & Astron, Birmingham B152TT, England, Email: yoshinobu.unno@kek.jp  
  Corporate Author Thesis  
  Publisher IOP Publishing Ltd Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1748-0221 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000974242700001 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 5522  
Permanent link to this record
 

 
Author Benitez, V. et al; Bernabeu, J.; Garcia, C.; Lacasta, C.; Marco, R.; Rodriguez, D.; Santoyo, D.; Solaz, C.; Soldevila, U. doi  openurl
  Title Sensors for the End-cap prototype of the Inner Tracker in the ATLAS Detector Upgrade Type Journal Article
  Year 2016 Publication (up) Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 833 Issue Pages 226-232  
  Keywords Silicon radiation detectors; Strip sensors; HL-LHC; ATLAS Upgrade; Inner Tracker (ITk); End-cap  
  Abstract The new silicon microstrip sensors of the End-cap part of the HL-LHC ATLAS Inner Tracker (ITk) present a number of challenges due to their complex design features such as the multiple different sensor shapes, the varying strip pitch, or the built-In stereo angle. In order to investigate these specific problems, the “petalet” prototype was defined as a small End-cap prototype. The sensors for the petalet prototype include several new layout and technological solutions to investigate the issues, they have been tested in detail by the collaboration. The sensor description and detailed test results are presented in this paper. New software tools have been developed for the automatic layout generation of the complex designs. The sensors have been fabricated, characterized and delivered to the institutes in the collaboration for their assembly on petalet prototypes. This paper describes the lessons learnt from the design and tests of the new solutions implemented on these sensors, which are being used for the full petal sensor development. This has resulted in the ITIc strip, community acquiring the necessary expertise to develop the full End-cap structure, the petal.  
  Address [Benitez, V.; Ullan, M.; Quirion, D.; Pellegrini, G.; Fleta, C.; Lozano, M.] CSIC, CNM, IMB, Campus Univ Bellaterra, Barcelona 08193, Spain, Email: miguel.ullan@imb-cnm.csic.es  
  Corporate Author Thesis  
  Publisher Elsevier Science Bv Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000383818200032 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 2816  
Permanent link to this record
 

 
Author Helling, C. et al; Bernabeu, J.; Lacasta, C.; Solaz, C. doi  openurl
  Title Strip sensor performance in prototype modules built for ATLAS ITk Type Journal Article
  Year 2020 Publication (up) Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 978 Issue Pages 164402 - 6pp  
  Keywords Silicon strip sensors; Strip module; Inter-strip isolation; Readout noise  
  Abstract ATLAS experiment is preparing an upgrade of its detector for High-Luminosity LHC (HL-LHC) operation. The upgrade involves installation of the new all-silicon Inner Tracker (ITk). In the context of the ITk preparations, more than 80 strip modules were built with prototype barrel sensors. They were tested with electrical readout on a per-channel basis. In general, an excellent performance was observed, consistent with previous ASIC-level and sensor-level tests. However, the lessons learned included two phenomena important for the future phases of the project. First was the need to store and test the modules in a dry environment due to humidity sensitivity of the sensors. The second was an observation of high noise regions for 2 modules. The high noise regions were tested further in several ways, including monitoring the performance as a function of time and bias voltage. Additionally, direct sensor-level tests were performed on the affected channels. The inter-strip resistance and bias resistance tests showed low values, indicating a temporary loss of the inter-strip isolation. A subsequent recovery of the noise performance was observed. We present the test details, an analysis of how the inter-strip isolation affects the module noise, and the relationship with sensor-level quality control tests.  
  Address [Helling, C.; Affolder, A. A.; Fadeyev, V.; Galloway, Z.; Gignac, M.; Gunnell, J.; Martinez-Mckinney, F.; Kang, N.; Yarwick, J.] Univ Calif Santa Cruz, Santa Cruz Inst Particle Phys, Santa Cruz, CA 95064 USA, Email: fadeyev@ucsc.edu  
  Corporate Author Thesis  
  Publisher Elsevier Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000560076700015 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 4505  
Permanent link to this record
 

 
Author Latonova, V. et al; Bernabeu, J.; Lacasta, C.; Solaz, C.; Soldevila, U. doi  openurl
  Title Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation Type Journal Article
  Year 2023 Publication (up) Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 1050 Issue Pages 168119 - 5pp  
  Keywords HL-LHC; ATLAS ITk; Silicon micro-strip sensor; Polysilicon bias resistor; Testchip  
  Abstract The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb(-1) means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 center dot 10(15) MeVn(eq)/cm(2) and 0.66MGy, respectively, including a safety factor of 1.5. Radiation hard n(+)-in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n(+) implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. We discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips.  
  Address [Latonova, V.; Federicova, P.; Kroll, J.; Kvasnicka, J.; Mikestikova, M.] Acad Sci Czech Republ, Inst Phys, Slovance 2, Prague 8, Czech Republic, Email: vera.latonova@cern.ch  
  Corporate Author Thesis  
  Publisher Elsevier Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:001035405300001 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 5601  
Permanent link to this record
Select All    Deselect All
 |   | 
Details
   print

Save Citations:
Export Records:
ific federMinisterio de Ciencia e InnovaciĆ³nAgencia Estatal de Investigaciongva