Decoster, S., Cottenier, S., Wahl, U., Correia, J. G., Pereira, L. M. C., Lacasta, C., et al. (2010). Diluted manganese on the bond-centered site in germanium. Appl. Phys. Lett., 97(15), 151914–3pp.
Abstract: The functional properties of Mn-doped Ge depend to large extent on the lattice location of the Mn impurities. Here, we present a lattice location study of implanted diluted Mn by means of electron emission channeling. Surprisingly, in addition to the expected substitutional lattice position, a large fraction of the Mn impurities occupies the bond-centered site. Corroborated by ab initio calculations, the bond-centered Mn is related to Mn-vacancy complexes. These unexpected results call for a reassessment of the theoretical studies on the electrical and magnetic behavior of Mn-doped Ge, hereby including the possible role of Mn-vacancy complexes.
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