Liptak, Z. et al, & Marinas, C. (2022). Measurements of beam backgrounds in SuperKEKB Phase 2. Nucl. Instrum. Methods Phys. Res. A, 1040, 167168–19pp.
Abstract: The high design luminosity of the SuperKEKB electron–positron collider will result in challenging levels of beam-induced backgrounds in the interaction region. Understanding and mitigating these backgrounds is critical to the success of the Belle II experiment. We report on the first background measurements performed after roll-in of the Belle II detector, a period known as SuperKEKB Phase 2, utilizing both the BEAST II system of dedicated background detectors and the Belle II detector itself. We also report on first revisions to the background simulation made in response to our findings. Backgrounds measured include contributions from synchrotron radiation, beam-gas, Touschek, and injection backgrounds. At the end of Phase 2, single-beam backgrounds originating from the 4 GeV positron Low Energy Ring (LER) agree reasonably well with simulation, while backgrounds from the 7 GeV electron High Energy Ring (HER) are approximately one order of magnitude higher than simulation. We extrapolate these backgrounds forward and conclude it is safe to install the Belle II vertex detector.
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Andricek, L. et al, Lacasta, C., Marinas, C., & Vos, M. (2011). Intrinsic resolutions of DEPFET detector prototypes measured at beam tests. Nucl. Instrum. Methods Phys. Res. A, 638(1), 24–32.
Abstract: The paper is based on the data of the 2009 DEPFET beam test at CERN SPS. The beam test used beams of pions and electrons with energies between 40 and 120 GeV, and the sensors tested were prototypes with thickness of 450 μm and pixel pitch between 20 and 32 μm. Intrinsic resolutions of the detectors are calculated by disentangling the contributions of measurement errors and multiple scattering in tracking residuals. Properties of the intrinsic resolution estimates and factors that influence them are discussed. For the DEPFET detectors in the beam test, the calculation yields intrinsic resolutions of approximate to 1 μm, with a typical accuracy of 0.1 μm. Bias scan, angle scan, and energy scan are used as example studies to show that the intrinsic resolutions are a useful tool in studies of detector properties. With sufficiently precise telescopes, detailed resolution maps can be constructed and used to study and optimize detector performance.
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Marinas, C., & Vos, M. (2011). The Belle-II DEPFET pixel detector: A step forward in vertexing in the superKEKB flavour factory. Nucl. Instrum. Methods Phys. Res. A, 650(1), 59–63.
Abstract: An upgrade of the successful asymmetric e(+)e(-) collider in KEK (Tsukuba, Japan) is foreseen by the fall of 2013. This new Super Flavor Factory will deliver an increased instantaneous luminosity of up to L = 8 x 10(35) cm(-2) s(-1), 40 times larger than the current KEKB machine. To exploit these new conditions and provide high precision measurements of the decay vertex of the B meson systems, a new silicon vertex detector will be operated in Belle. This new detector will consist of two layers of DEPFET Active Pixel Sensors as close as possible to the interaction point. DEPFET is a field effect transistor, with an additional deep implant underneath the channel's gate, integrated on a completely depleted bulk. This technology offers detection and an in-pixel amplification stage, while keeping low the power consumption. Under these conditions, thin sensors with small pixel size and low intrinsic noise are possible. In this article, an overview of the full system will be described, including the sensor, the front-end electronics and both the mechanical and thermal proposed solutions as well as the expected performance.
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Boronat, M., Marinas, C., Frey, A., Garcia, I., Schwenker, B., Vos, M., et al. (2015). Physical Limitations to the Spatial Resolution of Solid-State Detectors. IEEE Trans. Nucl. Sci., 62(1), 381–386.
Abstract: In this paper we explore the effect of delta-ray emission and fluctuations in the signal deposition on the detection of charged particles in silicon-based detectors. We show that these two effects ultimately limit the resolution that can be achieved by interpolation of the signal in finely segmented position-sensitive solid-state devices.
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Andricek, L., Boronat, M., Fuster, J., Garcia, I., Gomis, P., Marinas, C., et al. (2016). Integrated cooling channels in position-sensitive silicon detectors. J. Instrum., 11, P06018–15pp.
Abstract: We present an approach to construct position-sensitive silicon detectors with an integrated cooling circuit. Tests on samples demonstrate that a very modest liquid flow very effectively cool the devices up to a power dissipation of over 10 W/cm(2). The liquid flow is found to have a negligible impact on the mechanical stability. A finite-element simulation predicts the cooling performance to an accuracy of approximately 10%.
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