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Author Benitez, V. et al; Bernabeu, J.; Garcia, C.; Lacasta, C.; Marco, R.; Rodriguez, D.; Santoyo, D.; Solaz, C.; Soldevila, U. doi  openurl
  Title Sensors for the End-cap prototype of the Inner Tracker in the ATLAS Detector Upgrade Type Journal Article
  Year 2016 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 833 Issue Pages 226-232  
  Keywords (down) Silicon radiation detectors; Strip sensors; HL-LHC; ATLAS Upgrade; Inner Tracker (ITk); End-cap  
  Abstract The new silicon microstrip sensors of the End-cap part of the HL-LHC ATLAS Inner Tracker (ITk) present a number of challenges due to their complex design features such as the multiple different sensor shapes, the varying strip pitch, or the built-In stereo angle. In order to investigate these specific problems, the “petalet” prototype was defined as a small End-cap prototype. The sensors for the petalet prototype include several new layout and technological solutions to investigate the issues, they have been tested in detail by the collaboration. The sensor description and detailed test results are presented in this paper. New software tools have been developed for the automatic layout generation of the complex designs. The sensors have been fabricated, characterized and delivered to the institutes in the collaboration for their assembly on petalet prototypes. This paper describes the lessons learnt from the design and tests of the new solutions implemented on these sensors, which are being used for the full petal sensor development. This has resulted in the ITIc strip, community acquiring the necessary expertise to develop the full End-cap structure, the petal.  
  Address [Benitez, V.; Ullan, M.; Quirion, D.; Pellegrini, G.; Fleta, C.; Lozano, M.] CSIC, CNM, IMB, Campus Univ Bellaterra, Barcelona 08193, Spain, Email: miguel.ullan@imb-cnm.csic.es  
  Corporate Author Thesis  
  Publisher Elsevier Science Bv Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000383818200032 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 2816  
Permanent link to this record
 

 
Author Andricek, L. et al; Lacasta, C.; Marinas, C.; Vos, M. doi  openurl
  Title Intrinsic resolutions of DEPFET detector prototypes measured at beam tests Type Journal Article
  Year 2011 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 638 Issue 1 Pages 24-32  
  Keywords (down) Silicon pixel detector; Detector resolution; Spatial resolution; DEPFET; Beam test  
  Abstract The paper is based on the data of the 2009 DEPFET beam test at CERN SPS. The beam test used beams of pions and electrons with energies between 40 and 120 GeV, and the sensors tested were prototypes with thickness of 450 μm and pixel pitch between 20 and 32 μm. Intrinsic resolutions of the detectors are calculated by disentangling the contributions of measurement errors and multiple scattering in tracking residuals. Properties of the intrinsic resolution estimates and factors that influence them are discussed. For the DEPFET detectors in the beam test, the calculation yields intrinsic resolutions of approximate to 1 μm, with a typical accuracy of 0.1 μm. Bias scan, angle scan, and energy scan are used as example studies to show that the intrinsic resolutions are a useful tool in studies of detector properties. With sufficiently precise telescopes, detailed resolution maps can be constructed and used to study and optimize detector performance.  
  Address [Dolezal, Z.; Drasal, Z.; Kodys, P.; Kvasnicka, P.; Malina, L.; Scheirich, J.] Charles Univ Prague, Fac Math & Phys, Inst Particle & Nucl Phys, CR-18000 Prague, Czech Republic, Email: peter.kodys@mff.cuni.cz  
  Corporate Author Thesis  
  Publisher Elsevier Science Bv Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes ISI:000290082600005 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 618  
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Author Real, D.; Calvo, D. doi  openurl
  Title Silicon Photomultipliers for Neutrino Telescopes Type Journal Article
  Year 2023 Publication Universe Abbreviated Journal Universe  
  Volume 9 Issue 7 Pages 326 - 14pp  
  Keywords (down) silicon photomultipliers; neutrino telescopes; time to digital converters; electronics acquisition  
  Abstract Neutrino astronomy has opened a new window to the extreme Universe, entering into a fruitful era built upon the success of neutrino telescopes, which have already given a new step forward in this novel and growing field by the first observation of steady point-like sources already achieved by IceCube. Neutrino telescopes equipped with Silicon PhotoMultipliers (SiPMs) will significantly increase in number, because of their excellent time resolution and the angular resolution, and will be in better condition to detect more steady sources as well as the unexpected. The use of SiPMs represents a challenge to the acquisition electronics because of the fast signals as well as the high levels of dark noise produced by SiPMs. The acquisition electronics need to include a noise rejection scheme by implementing a coincidence filter between channels. This work discusses the advantages and disadvantages of using SiPMs for the next generation of neutrino telescopes, focusing on the possible developments that could help for their adoption in the near future.  
  Address [Real, Diego; Calvo, David] Univ Valencia, Inst Fis Corpuscular, CSIC, IFIC, C Catedrat Jose Beltran 2, Valencia 46980, Spain, Email: real@ific.uv.es  
  Corporate Author Thesis  
  Publisher Mdpi Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes WOS:001038900800001 Approved no  
  Is ISI yes International Collaboration no  
  Call Number IFIC @ pastor @ Serial 5593  
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Author Balibrea-Correa, J.; Lerendegui-Marco, J.; Calvo, D.; Caballero, L.; Babiano, V.; Ladarescu, I.; Redondo, M.L.; Tain, J.L.; Tolosa, A.; Domingo-Pardo, C.; Calvino, F.; Casanovas, A.; Tarifeño-Saldivia, A.; Alcayne, V.; Cano-Ott, D.; Martinez, T.; Guerrero, C.; Barbagallo, M.; Macina, D.; Bacak, M. doi  openurl
  Title A first prototype of C6D6 total-energy detector with SiPM readout for neutron capture time-of-flight experiments Type Journal Article
  Year 2021 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 985 Issue Pages 164709 - 8pp  
  Keywords (down) Silicon photomultiplier; Radiation detectors; Time-of-flight; Radiative capture; Total energy detector; Pulse-height weighting technique  
  Abstract Low efficiency total-energy detectors (TEDs) are one of the main tools for neutron capture cross section measurements utilizing the time-of-flight (TOF) technique. State-of-the-art TEDs are based on a C6D6 liquid-scintillation cell optically coupled to a fast photomultiplier tube. The large photomultiplier tube represents yet a significant contribution to the so-called neutron sensitivity background, which is one of the most conspicuous sources of uncertainty in this type of experiments. Here we report on the development of a first prototype of a TED based on a silicon-photomultiplier (SiPM) readout, thus resulting in a lightweight and much more compact detector. Apart from the envisaged improvement in neutron sensitivity, the new system uses low voltage (+28 V) and low current supply (-50 mA), which is more practical than the-kV supply required by conventional photomultipliers. One important difficulty hindering the earlier implementation of SiPM readout for this type of detector was the large capacitance for the output signal when all pixels of a SiPM array are summed together. The latter leads to long pulse rise and decay times, which are not suitable for time-of-flight experiments. In this work we demonstrate the feasibility of a Schottky-diode multiplexing readout approach, that allows one to preserve the excellent timing properties of SiPMs, hereby paving the way for their implementation in future neutron TOF experiments.  
  Address [Balibrea-Correa, J.; Lerendegui-Marco, J.; Calvo, D.; Caballero, L.; Babiano, V; Ladarescu, I; Redondo, M. Lopez; Tain, J. L.; Tolosa, A.; Domingo-Pardo, C.] Univ Valencia, Inst Fis Corpuscular, CSIC, Valencia, Spain, Email: dacaldia@ific.uv.es;  
  Corporate Author Thesis  
  Publisher Elsevier Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000592358200019 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 4638  
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Author Affolder, A. et al; Garcia, C.; Lacasta, C.; Marco, R.; Marti-Garcia, S.; Miñano, M.; Soldevila, U. doi  openurl
  Title Silicon detectors for the sLHC Type Journal Article
  Year 2011 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 658 Issue 1 Pages 11-16  
  Keywords (down) Silicon particle detectors; Radiation damage; Irradiation; Charge collection efficiency  
  Abstract In current particle physics experiments, silicon strip detectors are widely used as part of the inner tracking layers. A foreseeable large-scale application for such detectors consists of the luminosity upgrade of the Large Hadron Collider (LHC), the super-LHC or sLHC, where silicon detectors with extreme radiation hardness are required. The mission statement of the CERN RD50 Collaboration is the development of radiation-hard semiconductor devices for very high luminosity colliders. As a consequence, the aim of the R&D programme presented in this article is to develop silicon particle detectors able to operate at sLHC conditions. Research has progressed in different areas, such as defect characterisation, defect engineering and full detector systems. Recent results from these areas will be presented. This includes in particular an improved understanding of the macroscopic changes of the effective doping concentration based on identification of the individual microscopic defects, results from irradiation with a mix of different particle types as expected for the sLHC, and the observation of charge multiplication effects in heavily irradiated detectors at very high bias voltages.  
  Address [Barber, T.; Breindl, M.; Driewer, A.; Koehler, M.; Kuehn, S.; Parzefall, U.; Preiss, J.; Walz, M.; Wiik, L.] Univ Freiburg, Inst Phys, D-79104 Freiburg, Germany, Email: Ulrich.Parzefall@physik.uni-freiburg.de  
  Corporate Author Thesis  
  Publisher Elsevier Science Bv Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000297783300004 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 836  
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