Solevi, P., Muñoz, E., Solaz, C., Trovato, M., Dendooven, P., Gillam, J. E., et al. (2016). Performance of MACACO Compton telescope for ion-beam therapy monitoring: first test with proton beams. Phys. Med. Biol., 61(14), 5149–5165.
Abstract: In order to exploit the advantages of ion-beam therapy in a clinical setting, delivery verification techniques are necessary to detect deviations from the planned treatment. Efforts are currently oriented towards the development of devices for real-time range monitoring. Among the different detector concepts proposed, Compton cameras are employed to detect prompt gammas and represent a valid candidate for real-time range verification. We present the first on-beam test of MACACO, a Compton telescope (multi-layer Compton camera) based on lanthanum bromide crystals and silicon photo-multipliers. The Compton telescope was first characterized through measurements and Monte Carlo simulations. The detector linearity was measured employing Na-22 and Am-Be sources, obtaining about 10% deviation from linearity at 3.44 MeV. A spectral image reconstruction algorithm was tested on synthetic data. Point-like sources emitting gamma rays with energy between 2 and 7 MeV were reconstructed with 3-5 mm resolution. The two-layer Compton telescope was employed to measure radiation emitted from a beam of 150 MeV protons impinging on a cylindrical PMMA target. Bragg-peak shifts were achieved via adjustment of the PMMA target location and the resulting measurements used during image reconstruction. Reconstructed Bragg peak profiles proved sufficient to observe peak-location differences within 10 mm demonstrating the potential of the MACACO Compton Telescope as a monitoring device for ion-beam therapy.
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Poley, L. et al, Lacasta, C., & Soldevila, U. (2016). Characterisation of strip silicon detectors for the ATLAS Phase-II Upgrade with a micro-focused X-ray beam. J. Instrum., 11, P07023–12pp.
Abstract: The planned HL-LHC (High Luminosity LHC) in 2025 is being designed to maximise the physics potential through a sizable increase in the luminosity up to 6.10(34) cm(-2) s(-1). A consequence of this increased luminosity is the expected radiation damage at 3000 fb(-1) after ten years of operation, requiring the tracking detectors to withstand fluences to over 1.10(16) 1 MeV n(eq)/cm(2) . In order to cope with the consequent increased readout rates, a complete re-design of the current ATLAS Inner Detector (ID) is being developed as the Inner Tracker (ITk). Two proposed detectors for the ATLAS strip tracker region of the ITk were characterized at the Diamond Light Source with a 3 μm FWHM 15 keV micro focused X-ray beam. The devices under test were a 320 μm thick silicon stereo (Barrel) ATLAS12 strip mini sensor wire bonded to a 130 nm CMOS binary readout chip (ABC130) and a 320 μm thick full size radial (end-cap) strip sensor – utilizing bi-metal readout layers – wire bonded to 250 nm CMOS binary readout chips (ABCN-25). A resolution better than the inter strip pitch of the 74.5 μm strips was achieved for both detectors. The effect of the p-stop diffusion layers between strips was investigated in detail for the wire bond pad regions. Inter strip charge collection measurements indicate that the effective width of the strip on the silicon sensors is determined by p-stop regions between the strips rather than the strip pitch.
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Miyagawa, P. S. et al, Bernabeu, P., Lacasta, C., Solaz, C., & Soldevila, U. (2024). Analysis of the results from Quality Control tests performed on ATLAS18 Strip Sensors during on-going production. Nucl. Instrum. Methods Phys. Res. A, 1064, 169457–9pp.
Abstract: The ATLAS experiment will replace its existing Inner Detector with the new all -silicon Inner Tracker (ITk) to cope with the operating conditions of the forthcoming high -luminosity phase of the LHC (HL-LHC). The outer regions of the ITk will be instrumented with similar to 18000 ATLAS18 strip sensors fabricated by Hamamatsu Photonics K.K. (HPK). With the launch of full-scale sensor production in 2021, the ITk strip sensor community has undertaken quality control (QC) testing of these sensors to ensure compliance with mechanical and electrical specifications agreed with HPK. The testing is conducted at seven QC sites on each of the monthly deliveries of similar to 500 sensors. This contribution will give an overview of the QC procedures and analysis; the tests most likely to determine pass/fail for a sensor are IV, long-term leakage current stability, full strip test and visual inspection. The contribution will then present trends in the results and properties following completion of similar to 60% of production testing. It will also mention challenges overcome through collaborative efforts with HPK during the early phases of production. With less than 5% of sensors rejected by QC testing, the overall production quality has been very good.
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Latonova, V. et al, Bernabeu, J., Lacasta, C., Solaz, C., & Soldevila, U. (2023). Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation. Nucl. Instrum. Methods Phys. Res. A, 1050, 168119–5pp.
Abstract: The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb(-1) means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 center dot 10(15) MeVn(eq)/cm(2) and 0.66MGy, respectively, including a safety factor of 1.5. Radiation hard n(+)-in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n(+) implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. We discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips.
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ATLAS Collaboration(Aad, G. et al), Cabrera Urban, S., Castillo Gimenez, V., Costa, M. J., Fassi, F., Ferrer, A., et al. (2013). Search for long-lived, multi-charged particles in pp collisions at root s=7 TeV using the ATLAS detector. Phys. Lett. B, 722(4-5), 305–323.
Abstract: A search for highly ionising, penetrating particles with electric charges from vertical bar q vertical bar = 2e to 6e is performed using the ATLAS detector at the CERN Large Hadron Collider. Proton-proton collision data taken at root s = 7 TeV during the 2011 running period, corresponding to an integrated luminosity of 4.4 fb(-1), are analysed. No signal candidates are observed, and 95% confidence level cross-section upper limits are interpreted as mass-exclusion lower limits for a simplified Drell-Yan production model. In this model, masses are excluded from 50 GeV up to 430, 480, 490, 470 and 420 GeV for charges 2e, 3e, 4e, 5e and 6e, respectively. (c) 2013 CERN. Published by Elsevier B.V. All rights reserved.
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