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Author |
Real, D.; Calvo, D. |
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Title |
Silicon Photomultipliers for Neutrino Telescopes |
Type |
Journal Article |
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Year |
2023 |
Publication |
Universe |
Abbreviated Journal |
Universe |
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Volume |
9 |
Issue |
7 |
Pages |
326 - 14pp |
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Keywords  |
silicon photomultipliers; neutrino telescopes; time to digital converters; electronics acquisition |
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Abstract |
Neutrino astronomy has opened a new window to the extreme Universe, entering into a fruitful era built upon the success of neutrino telescopes, which have already given a new step forward in this novel and growing field by the first observation of steady point-like sources already achieved by IceCube. Neutrino telescopes equipped with Silicon PhotoMultipliers (SiPMs) will significantly increase in number, because of their excellent time resolution and the angular resolution, and will be in better condition to detect more steady sources as well as the unexpected. The use of SiPMs represents a challenge to the acquisition electronics because of the fast signals as well as the high levels of dark noise produced by SiPMs. The acquisition electronics need to include a noise rejection scheme by implementing a coincidence filter between channels. This work discusses the advantages and disadvantages of using SiPMs for the next generation of neutrino telescopes, focusing on the possible developments that could help for their adoption in the near future. |
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Address |
[Real, Diego; Calvo, David] Univ Valencia, Inst Fis Corpuscular, CSIC, IFIC, C Catedrat Jose Beltran 2, Valencia 46980, Spain, Email: real@ific.uv.es |
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Mdpi |
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English |
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Notes |
WOS:001038900800001 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
no |
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Call Number |
IFIC @ pastor @ |
Serial |
5593 |
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Author |
Balibrea-Correa, J.; Lerendegui-Marco, J.; Calvo, D.; Caballero, L.; Babiano, V.; Ladarescu, I.; Redondo, M.L.; Tain, J.L.; Tolosa, A.; Domingo-Pardo, C.; Calvino, F.; Casanovas, A.; Tarifeño-Saldivia, A.; Alcayne, V.; Cano-Ott, D.; Martinez, T.; Guerrero, C.; Barbagallo, M.; Macina, D.; Bacak, M. |
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Title |
A first prototype of C6D6 total-energy detector with SiPM readout for neutron capture time-of-flight experiments |
Type |
Journal Article |
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Year |
2021 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
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Volume |
985 |
Issue |
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Pages |
164709 - 8pp |
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Keywords |
Silicon photomultiplier; Radiation detectors; Time-of-flight; Radiative capture; Total energy detector; Pulse-height weighting technique |
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Abstract |
Low efficiency total-energy detectors (TEDs) are one of the main tools for neutron capture cross section measurements utilizing the time-of-flight (TOF) technique. State-of-the-art TEDs are based on a C6D6 liquid-scintillation cell optically coupled to a fast photomultiplier tube. The large photomultiplier tube represents yet a significant contribution to the so-called neutron sensitivity background, which is one of the most conspicuous sources of uncertainty in this type of experiments. Here we report on the development of a first prototype of a TED based on a silicon-photomultiplier (SiPM) readout, thus resulting in a lightweight and much more compact detector. Apart from the envisaged improvement in neutron sensitivity, the new system uses low voltage (+28 V) and low current supply (-50 mA), which is more practical than the-kV supply required by conventional photomultipliers. One important difficulty hindering the earlier implementation of SiPM readout for this type of detector was the large capacitance for the output signal when all pixels of a SiPM array are summed together. The latter leads to long pulse rise and decay times, which are not suitable for time-of-flight experiments. In this work we demonstrate the feasibility of a Schottky-diode multiplexing readout approach, that allows one to preserve the excellent timing properties of SiPMs, hereby paving the way for their implementation in future neutron TOF experiments. |
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Address |
[Balibrea-Correa, J.; Lerendegui-Marco, J.; Calvo, D.; Caballero, L.; Babiano, V; Ladarescu, I; Redondo, M. Lopez; Tain, J. L.; Tolosa, A.; Domingo-Pardo, C.] Univ Valencia, Inst Fis Corpuscular, CSIC, Valencia, Spain, Email: dacaldia@ific.uv.es; |
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Elsevier |
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English |
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Series Volume |
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ISSN |
0168-9002 |
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Conference |
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Notes |
WOS:000592358200019 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
4638 |
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Author |
Affolder, A. et al; Garcia, C.; Lacasta, C.; Marco, R.; Marti-Garcia, S.; Miñano, M.; Soldevila, U. |
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Title |
Silicon detectors for the sLHC |
Type |
Journal Article |
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Year |
2011 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
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Volume |
658 |
Issue |
1 |
Pages |
11-16 |
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Keywords |
Silicon particle detectors; Radiation damage; Irradiation; Charge collection efficiency |
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Abstract |
In current particle physics experiments, silicon strip detectors are widely used as part of the inner tracking layers. A foreseeable large-scale application for such detectors consists of the luminosity upgrade of the Large Hadron Collider (LHC), the super-LHC or sLHC, where silicon detectors with extreme radiation hardness are required. The mission statement of the CERN RD50 Collaboration is the development of radiation-hard semiconductor devices for very high luminosity colliders. As a consequence, the aim of the R&D programme presented in this article is to develop silicon particle detectors able to operate at sLHC conditions. Research has progressed in different areas, such as defect characterisation, defect engineering and full detector systems. Recent results from these areas will be presented. This includes in particular an improved understanding of the macroscopic changes of the effective doping concentration based on identification of the individual microscopic defects, results from irradiation with a mix of different particle types as expected for the sLHC, and the observation of charge multiplication effects in heavily irradiated detectors at very high bias voltages. |
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Address |
[Barber, T.; Breindl, M.; Driewer, A.; Koehler, M.; Kuehn, S.; Parzefall, U.; Preiss, J.; Walz, M.; Wiik, L.] Univ Freiburg, Inst Phys, D-79104 Freiburg, Germany, Email: Ulrich.Parzefall@physik.uni-freiburg.de |
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Publisher |
Elsevier Science Bv |
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English |
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ISSN |
0168-9002 |
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Notes |
WOS:000297783300004 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
836 |
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Author |
Weber, M. et al; Esperante, D. |
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Title |
DONES EVO: Risk mitigation for the IFMIF-DONES facility |
Type |
Journal Article |
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Year |
2024 |
Publication |
Nuclear Materials and Energy |
Abbreviated Journal |
Nucl. Mater. Energy |
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Volume |
38 |
Issue |
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Pages |
101622 - 5pp |
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Keywords |
Signal Transmission Improvement; RF Conditioning Optimisation; Beam Extraction Device; Medical Isotopes Production; Lithium Purification; Critical Components Manufacture |
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Abstract |
The International Fusion Materials Irradiation Facility- DEMO Oriented Neutron Source (IFMIF-DONES) is a scientific infrastructure aimed to provide an intense neutron source for the qualification of materials to be used in future fusion power reactors. Its implementation is critical for the construction of the fusion DEMOnstration Power Plant (DEMO). IFMIF-DONES is a unique facility requiring a broad set of technologies. Although most of the necessary technologies have already been validated, there are still some aspects that introduce risks in the evolution of the project. In order to mitigate these risks, a consortium of companies, with the support of research centres and the funding of the CDTI (Centre for the Development of Industrial Technology and Innovation), has launched the DONES EVO Programme, which comprises six lines of research: center dot Improvement of signal transmission and integrity (planning and integration risks) center dot Optimisation of RF conditioning processes (planning and reliability risks) center dot Development of a reliable beam extraction device (reliability risks) center dot Development of technologies for the production of medical isotopes (reliability risks) center dot Improvement of critical parts of the lithium purification system (safety and reliability risks) center dot Validation of the manufacture of critical components with special materials (reliability risk). DONES EVO will focus on developing the appropriate response to the risks identified in the IFMIFDONES project through research and prototyping around the associated technologies. |
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Address |
[Weber, M.; Ibarra, A.; Maldonado, R.; Podadera, I.] DONES Espana Consortium, IFMIF, Granada, Spain |
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Elsevier |
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English |
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Notes |
WOS:001202783400001 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
no |
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Call Number |
IFIC @ pastor @ |
Serial |
6075 |
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Author |
Poley, L.; Blue, A.; Bloch, I.; Buttar, C.; Fadeyev, V.; Fernandez-Tejero, J.; Fleta, C.; Hacker, J.; Lacasta, C.; Miñano, M.; Renzmann, M.; Rossi, E.; Sawyer, C.; Sperlich, D.; Stegler, M.; Ullan, M.; Unno, Y. |
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Title |
Mapping the depleted area of silicon diodes using a micro-focused X-ray beam |
Type |
Journal Article |
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Year |
2019 |
Publication |
Journal of Instrumentation |
Abbreviated Journal |
J. Instrum. |
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Volume |
14 |
Issue |
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Pages |
P03024 - 14pp |
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Keywords |
Si microstrip and pad detectors; Detector design and construction technologies and materials; Particle tracking detectors (Solid-state detectors); Radiation-hard detectors |
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Abstract |
For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker (ITk). The ITk will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of 500V to maintain a low noise and power dissipation. In order to minimise sensor leakage currents, particularly in the high-radiation environment inside the ATLAS detector, sensors are foreseen to be operated at low temperatures and to be manufactured from wafers with a high bulk resistivity of several k Omega.cm. Simulations showed the electric field inside sensors with high bulk resistivity to extend towards the sensor edge, which could lead to increased surface currents for narrow dicing edges. In order to map the electric field inside biased silicon sensors with high bulk resistivity, three diodes from ATLAS silicon strip sensor prototype wafers were studied with a monochromatic, micro-focused X-ray beam at the Diamond Light Source (Didcot, U.K.). For all devices under investigation, the electric field inside the diode was mapped and its dependence on the applied bias voltage was studied. |
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Address |
[Poley, L.] Lawrence Berkeley Natl Lab, Cyclotron Rd, Berkeley, CA 94720 USA, Email: Anne-Luise.Poley@desy.de |
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Publisher |
Iop Publishing Ltd |
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English |
Summary Language |
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Abbreviated Series Title |
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Series Issue |
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Edition |
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ISSN |
1748-0221 |
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Conference |
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Notes |
WOS:000463330900012 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
3973 |
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