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Author ATLAS Collaboration (Aad, G. et al); Alvarez Piqueras, D.; Cabrera Urban, S.; Castillo Gimenez, V.; Costa, M.J.; Fernandez Martinez, P.; Ferrer, A.; Fiorini, L.; Fuster, J.; Garcia, C.; Garcia Navarro, J.E.; Gonzalez de la Hoz, S.; Hernandez Jimenez, Y.; Higon-Rodriguez, E.; Irles Quiles, A.; Jimenez Pena, J.; Kaci, M.; King, M.; Lacasta, C.; Lacuesta, V.R.; Marti-Garcia, S.; Mitsou, V.A.; Oliver Garcia, E.; Pedraza Lopez, S.; Perez Garcia-Estañ, M.T.; Romero Adam, E.; Ros, E.; Salt, J.; Sanchez Martinez, V.; Soldevila, U.; Sanchez, J.; Valero, A.; Valladolid Gallego, E.; Valls Ferrer, J.A.; Vos, M. url  doi
openurl 
  Title Measurement of four-jet differential cross sections in root s=8 TeV proton-proton collisions using the ATLAS detector Type Journal Article
  Year 2015 Publication Journal of High Energy Physics Abbreviated Journal J. High Energy Phys.  
  Volume 12 Issue 12 Pages 105 - 76pp  
  Keywords (down) Jet physics; Hadron-Hadron scattering; QCD  
  Abstract Differential cross sections for the production of at least four jets have been measured in proton-proton collisions at root s = 8 TeV at the Large Hadron Collider using the ATLAS detector. Events are selected if the four anti-k(t) R = 0.4 jets with the largest transverse momentum (p(T)) within the rapidity range vertical bar y vertical bar < 2 : 8 are well separated (Delta R-4j(min) > 0.65), all have p(T) > 64 GeV, and include at least one jet with p(T) > 100 GeV. The dataset corresponds to an integrated luminosity of 20.3 fb(-1). The cross sections, corrected for detector effects, are compared to leading-order and next-to-leading-order calculations as a function of the jet momenta, invariant masses, minimum and maximum opening angles and other kinematic variables.  
  Address [Jackson, P.; Kukla, R.; Lee, L.; Petridis, A.; White, M. J.] Univ Adelaide, Dept Phys, Adelaide, SA, Australia  
  Corporate Author Thesis  
  Publisher Springer Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1029-8479 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000367475300001 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 2527  
Permanent link to this record
 

 
Author Poley, L. et al; Lacasta, C.; Soldevila, U. url  doi
openurl 
  Title Characterisation of strip silicon detectors for the ATLAS Phase-II Upgrade with a micro-focused X-ray beam Type Journal Article
  Year 2016 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.  
  Volume 11 Issue Pages P07023 - 12pp  
  Keywords (down) Inspection with x-rays; Si microstrip and pad detectors; Hybrid detectors; Instrumentation for particle accelerators and storage rings – high energy (linear accelerators, synchrotrons)  
  Abstract The planned HL-LHC (High Luminosity LHC) in 2025 is being designed to maximise the physics potential through a sizable increase in the luminosity up to 6.10(34) cm(-2) s(-1). A consequence of this increased luminosity is the expected radiation damage at 3000 fb(-1) after ten years of operation, requiring the tracking detectors to withstand fluences to over 1.10(16) 1 MeV n(eq)/cm(2) . In order to cope with the consequent increased readout rates, a complete re-design of the current ATLAS Inner Detector (ID) is being developed as the Inner Tracker (ITk). Two proposed detectors for the ATLAS strip tracker region of the ITk were characterized at the Diamond Light Source with a 3 μm FWHM 15 keV micro focused X-ray beam. The devices under test were a 320 μm thick silicon stereo (Barrel) ATLAS12 strip mini sensor wire bonded to a 130 nm CMOS binary readout chip (ABC130) and a 320 μm thick full size radial (end-cap) strip sensor – utilizing bi-metal readout layers – wire bonded to 250 nm CMOS binary readout chips (ABCN-25). A resolution better than the inter strip pitch of the 74.5 μm strips was achieved for both detectors. The effect of the p-stop diffusion layers between strips was investigated in detail for the wire bond pad regions. Inter strip charge collection measurements indicate that the effective width of the strip on the silicon sensors is determined by p-stop regions between the strips rather than the strip pitch.  
  Address [Poley, L.; Bloch, I.; Diez, S.; Gregor, I. -M.; Lohwasser, K.] DESY, Notkestr, Hamburg, Germany, Email: Anne-Luise.Poley@desy.de  
  Corporate Author Thesis  
  Publisher Iop Publishing Ltd Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1748-0221 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000387763000014 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 2872  
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Author Fernandez-Tejero, J. et al; Soldevila, U. doi  openurl
  Title Humidity sensitivity of large area silicon sensors: Study and implications Type Journal Article
  Year 2020 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 978 Issue Pages 164406 - 6pp  
  Keywords (down) Humidity sensitivity; Large area silicon sensors; Slim-edge; HL-LHC  
  Abstract The production of large area sensors is one of the main challenges that the ATLAS collaboration faces for the new Inner-Tracker full-silicon detector. During the prototype fabrication phase for the High Luminosity Large Hadron Collider upgrade, several ATLAS institutes observed indications of humidity sensitivity of large area sensors, even at relative humidities well below the dew point. Specifically, prototype Barrel and End-Cap silicon strip sensors fabricated in 6-inch wafers manifest a prompt decrease of the breakdown voltage when operating under high relative humidity, adversely affecting the performance of the sensors. In addition to the investigation of these prototype sensors, a specific fabrication batch with special passivation is also studied, allowing for a deeper understanding of the responsible mechanisms. This work presents an extensive study of this behaviour on large area sensors. The locations of the hotspots at the breakdown voltage at high humidity are revealed using different infrared thermography techniques. Several palliative treatments are attempted, proving the influence of sensor cleaning methods, as well as baking, on the device performance, but no improvement on the humidity sensitivity was achieved. Furthermore, a study of the incidence of the sensitivity in different batches is also presented, introducing a hypothesis of the origins of the humidity sensitivity associated to the sensor edge design, together with passivation thickness and conformity. Several actions to be taken during sensor production and assembly are extracted from this study, in order to minimize the impact of humidity sensitivity on the performance of large area silicon sensors for High Energy Physics experiments.  
  Address [Fernandez-Tejero, J.; Avino, O.; Fleta, C.; Ullan, M.; Vellvehi, M.] CSIC, Ctr Nacl Microelect IMB CNM, Campus UAB Bellaterra, Barcelona 08193, Spain, Email: Xavi.Fdez@cern.ch  
  Corporate Author Thesis  
  Publisher Elsevier Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000560076700009 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 4504  
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Author Miyagawa, P.S. et al; Bernabeu, P.; Lacasta, C.; Solaz, C.; Soldevila, U. doi  openurl
  Title Analysis of the results from Quality Control tests performed on ATLAS18 Strip Sensors during on-going production Type Journal Article
  Year 2024 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 1064 Issue Pages 169457 - 9pp  
  Keywords (down) HL-LHC; ATLAS; ITk; Strip sensors  
  Abstract The ATLAS experiment will replace its existing Inner Detector with the new all -silicon Inner Tracker (ITk) to cope with the operating conditions of the forthcoming high -luminosity phase of the LHC (HL-LHC). The outer regions of the ITk will be instrumented with similar to 18000 ATLAS18 strip sensors fabricated by Hamamatsu Photonics K.K. (HPK). With the launch of full-scale sensor production in 2021, the ITk strip sensor community has undertaken quality control (QC) testing of these sensors to ensure compliance with mechanical and electrical specifications agreed with HPK. The testing is conducted at seven QC sites on each of the monthly deliveries of similar to 500 sensors. This contribution will give an overview of the QC procedures and analysis; the tests most likely to determine pass/fail for a sensor are IV, long-term leakage current stability, full strip test and visual inspection. The contribution will then present trends in the results and properties following completion of similar to 60% of production testing. It will also mention challenges overcome through collaborative efforts with HPK during the early phases of production. With less than 5% of sensors rejected by QC testing, the overall production quality has been very good.  
  Address [Miyagawa, P. S.; Beck, G. A.; Bevan, A. J.; Chen, Z.; Dawson, I.; Zenz, S. C.] Queen Mary Univ London, Particle Phys Res Ctr, GO Jones Bldg, Mile End Rd, London E14NS, England, Email: paul.miyagawa@cern.ch  
  Corporate Author Thesis  
  Publisher Elsevier Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:001249611300001 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 6158  
Permanent link to this record
 

 
Author Latonova, V. et al; Bernabeu, J.; Lacasta, C.; Solaz, C.; Soldevila, U. doi  openurl
  Title Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation Type Journal Article
  Year 2023 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 1050 Issue Pages 168119 - 5pp  
  Keywords (down) HL-LHC; ATLAS ITk; Silicon micro-strip sensor; Polysilicon bias resistor; Testchip  
  Abstract The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb(-1) means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 center dot 10(15) MeVn(eq)/cm(2) and 0.66MGy, respectively, including a safety factor of 1.5. Radiation hard n(+)-in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n(+) implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. We discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips.  
  Address [Latonova, V.; Federicova, P.; Kroll, J.; Kvasnicka, J.; Mikestikova, M.] Acad Sci Czech Republ, Inst Phys, Slovance 2, Prague 8, Czech Republic, Email: vera.latonova@cern.ch  
  Corporate Author Thesis  
  Publisher Elsevier Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:001035405300001 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 5601  
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