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Author LHCb Collaboration (Aaij, R. et al); Martinez-Vidal, F.; Oyanguren, A.; Ruiz Valls, P.; Sanchez Mayordomo, C.
Title LHCb detector performance Type Journal Article
Year 2015 Publication International Journal of Modern Physics A Abbreviated Journal Int. J. Mod. Phys. A
Volume 30 Issue 7 Pages 1530022 - 73pp
Keywords (down) Large detector systems for particle and astroparticle physics; particle tracking detectors; gaseous detectors; calorimeters; Cherenkov detectors; particle identification methods; detector alignment and calibration methods; trigger; LHC
Abstract The LHCb detector is a forward spectrometer at the Large Hadron Collider (LHC) at CERN. The experiment is designed for precision measurements of CP violation and rare decays of beauty and charm hadrons. In this paper the performance of the various LHCb sub-detectors and the trigger system are described, using data taken from 2010 to 2012. It is shown that the design criteria of the experiment have been met. The excellent performance of the detector has allowed the LHCb collaboration to publish a wide range of physics results, demonstrating LHCb's unique role, both as a heavy flavour experiment and as a general purpose detector in the forward region.
Address [Bediaga, I.; De Miranda, J. M.; Rodrigues, F. Ferreira; Gomes, A.; Massafferri, A.; dos Reis, A. C.; Rodrigues, A. B.] Ctr Brasileiro Pesquisas Fis, Rio De Janeiro, Brazil
Corporate Author Thesis
Publisher World Scientific Publ Co Pte Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0217-751x ISBN Medium
Area Expedition Conference
Notes WOS:000350814000002 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 2151
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Author Fernandez-Tejero, J. et al; Soldevila, U.
Title Humidity sensitivity of large area silicon sensors: Study and implications Type Journal Article
Year 2020 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 978 Issue Pages 164406 - 6pp
Keywords (down) Humidity sensitivity; Large area silicon sensors; Slim-edge; HL-LHC
Abstract The production of large area sensors is one of the main challenges that the ATLAS collaboration faces for the new Inner-Tracker full-silicon detector. During the prototype fabrication phase for the High Luminosity Large Hadron Collider upgrade, several ATLAS institutes observed indications of humidity sensitivity of large area sensors, even at relative humidities well below the dew point. Specifically, prototype Barrel and End-Cap silicon strip sensors fabricated in 6-inch wafers manifest a prompt decrease of the breakdown voltage when operating under high relative humidity, adversely affecting the performance of the sensors. In addition to the investigation of these prototype sensors, a specific fabrication batch with special passivation is also studied, allowing for a deeper understanding of the responsible mechanisms. This work presents an extensive study of this behaviour on large area sensors. The locations of the hotspots at the breakdown voltage at high humidity are revealed using different infrared thermography techniques. Several palliative treatments are attempted, proving the influence of sensor cleaning methods, as well as baking, on the device performance, but no improvement on the humidity sensitivity was achieved. Furthermore, a study of the incidence of the sensitivity in different batches is also presented, introducing a hypothesis of the origins of the humidity sensitivity associated to the sensor edge design, together with passivation thickness and conformity. Several actions to be taken during sensor production and assembly are extracted from this study, in order to minimize the impact of humidity sensitivity on the performance of large area silicon sensors for High Energy Physics experiments.
Address [Fernandez-Tejero, J.; Avino, O.; Fleta, C.; Ullan, M.; Vellvehi, M.] CSIC, Ctr Nacl Microelect IMB CNM, Campus UAB Bellaterra, Barcelona 08193, Spain, Email: Xavi.Fdez@cern.ch
Corporate Author Thesis
Publisher Elsevier Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:000560076700009 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 4504
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Author Miyagawa, P.S. et al; Bernabeu, P.; Lacasta, C.; Solaz, C.; Soldevila, U.
Title Analysis of the results from Quality Control tests performed on ATLAS18 Strip Sensors during on-going production Type Journal Article
Year 2024 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 1064 Issue Pages 169457 - 9pp
Keywords (down) HL-LHC; ATLAS; ITk; Strip sensors
Abstract The ATLAS experiment will replace its existing Inner Detector with the new all -silicon Inner Tracker (ITk) to cope with the operating conditions of the forthcoming high -luminosity phase of the LHC (HL-LHC). The outer regions of the ITk will be instrumented with similar to 18000 ATLAS18 strip sensors fabricated by Hamamatsu Photonics K.K. (HPK). With the launch of full-scale sensor production in 2021, the ITk strip sensor community has undertaken quality control (QC) testing of these sensors to ensure compliance with mechanical and electrical specifications agreed with HPK. The testing is conducted at seven QC sites on each of the monthly deliveries of similar to 500 sensors. This contribution will give an overview of the QC procedures and analysis; the tests most likely to determine pass/fail for a sensor are IV, long-term leakage current stability, full strip test and visual inspection. The contribution will then present trends in the results and properties following completion of similar to 60% of production testing. It will also mention challenges overcome through collaborative efforts with HPK during the early phases of production. With less than 5% of sensors rejected by QC testing, the overall production quality has been very good.
Address [Miyagawa, P. S.; Beck, G. A.; Bevan, A. J.; Chen, Z.; Dawson, I.; Zenz, S. C.] Queen Mary Univ London, Particle Phys Res Ctr, GO Jones Bldg, Mile End Rd, London E14NS, England, Email: paul.miyagawa@cern.ch
Corporate Author Thesis
Publisher Elsevier Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:001249611300001 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 6158
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Author Latonova, V. et al; Bernabeu, J.; Lacasta, C.; Solaz, C.; Soldevila, U.
Title Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation Type Journal Article
Year 2023 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 1050 Issue Pages 168119 - 5pp
Keywords (down) HL-LHC; ATLAS ITk; Silicon micro-strip sensor; Polysilicon bias resistor; Testchip
Abstract The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb(-1) means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 center dot 10(15) MeVn(eq)/cm(2) and 0.66MGy, respectively, including a safety factor of 1.5. Radiation hard n(+)-in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n(+) implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. We discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips.
Address [Latonova, V.; Federicova, P.; Kroll, J.; Kvasnicka, J.; Mikestikova, M.] Acad Sci Czech Republ, Inst Phys, Slovance 2, Prague 8, Czech Republic, Email: vera.latonova@cern.ch
Corporate Author Thesis
Publisher Elsevier Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:001035405300001 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 5601
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Author Miñano, M.
Title Radiation Hard Silicon Strips Detectors for the SLHC Type Journal Article
Year 2011 Publication IEEE Transactions on Nuclear Science Abbreviated Journal IEEE Trans. Nucl. Sci.
Volume 58 Issue 3 Pages 1135-1140
Keywords (down) High energy physics; microstrip; radiation detectors; silicon; SLHC
Abstract While the Large Hadron Collider (LHC) began taking data in 2009, scenarios for a machine upgrade to achieve a much higher luminosity are being developed. In the current planning, it is foreseen to increase the luminosity of the LHC at CERN around 2018. As radiation damage scales with integrated luminosity, the particle physics experiments will need to be equipped with a new generation of radiation hard detectors. This article reports on the status of the R&D projects on radiation hard silicon strips detectors for particle physics, linked to the Large Hadron Collider Upgrade, super-LHC (sLHC) of the ATLAS microstrip detector. The primary focus of this report is on measuring the radiation hardness of the silicon materials and the detectors under study. This involves designing silicon detectors, irradiating them to the sLHC radiation levels and studying their performance as particle detectors. The most promising silicon detector for the different radiation levels in the different regions of the ATLAS microstrip detector will be presented. Important challenges related to engineering layout, powering, cooling and reading out a very large strip detector are presented. Ideas on possible schemes for the layout and support mechanics will be shown.
Address IFIC UV CSIC, Inst Fis Corpuscular, E-46071 Valencia, Spain, Email: mercedes.minano@ific.uv.es
Corporate Author Thesis
Publisher Ieee-Inst Electrical Electronics Engineers Inc Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0018-9499 ISBN Medium
Area Expedition Conference
Notes ISI:000291659300001 Approved no
Is ISI yes International Collaboration no
Call Number IFIC @ pastor @ Serial 651
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